Abstract: This invention relates to a novel transdermal drug delivery system whereby Huperzine A (“Hup A”), a naturally occurred Acetylcholine esterase inhibitor traditionally used to alleviate memory problem, is formulated for transdermal administration suitable for the treatment of Alzheimer's Disease (“AD”) to increase the efficacy and convenience for outpatient care of AD patients. A controlled-release skin patch designed for once-a-week application of Hup A is provided for easy AD medication according to the invention.

Abstract: The present invention provides improved apparatus and process for the dilution and delivery of both high-purity chemicals as well as slurry chemicals from one or more bulk sources to an end-user. The present system utilizes two or more metered vessels which are connected to bulk chemical sources via intake lines. Each metered vessel contains an adjustable, swingable angle pipe, which drains any excess chemical by gravity flow from the metered vessel so as to adjust the chemical amount to a predetermined desired level. As the chemicals exit the angle pipes, sensors located at the end of the angle pipes sense the chemical being discharged and trigger the feed pump and valve to shut off, whereby the excess chemicals will continue to drain out until the chemical levels reach the same level as the vent port of the pipe attached to the metered vessels. The chemicals are drawn into the metered vessels from the bulk sources via a feed pump or pressure mechanism.

Abstract: This application relates to a process to suppress the impurity diffusion through gate oxide on silicided amorphous-Si gate structures that utilize the silicide layers as the implantation barrier to minimize the impurity diffusion by reducing the projectile range and implant-induced defects, resulting in smaller flat-band voltage(VFB) shift and better characteristics of the breakdown field(Ebd) and charge to breakdown(Qbd). In addition, the amorphous-Si underlying layer is simultaneously kept during the formation of a low-temperature self-aligned silicide (SAD) process to further retard the impurity diffusion. Hence, the usage of such bilayered silicide/amorphous-Si films could effectively retard the impurity diffusion, by combining both effects of the amorphous-Si layer and the silicide process or inducing other undesirable effects such as the increase of gate sheet resistance.

Abstract: Quantitative analysis for thuringiensin by capillary electrophoresis (“CE’) was demonstrated. CE is a suitable separation technique for thuringiensin because of its high resolution, great efficiency, rapid analysis and small consumption of sample. Tryptophan, an aromatic amino acid sharing a similar UV absorptive spectrum as thuringiensin, was used as an internal standard to avoid some inaccurate results caused by the questionable stability of purified thuringiensin. A mixed amount of tryptophan was mixed with varied amount of newly made thuringiensin standards for CE analysis. The electropherograms showed that the peak of tryptophan appeared around 8 minutes, which is 6 minutes earlier than the peak of thuringiensin. The peak area ratio between thuringiensin and tryptophan is proportional to the amount of thuringiensin in the mixture. The linear regression has been established to assess the peak area ratio that can be used to quantify the concentration of thuringiensin.

Abstract: This invention discloses an illumination device for use in image reading applications. The illumination device comprises a light guide and a light source attached to one end of the light guide, which consists of a rod-shaped body with two end light reflectors made of metal clips. The two lateral surfaces of the light guide causes total internal reflection of light rays impinging upon the surface from within the light guide. The curved top surface of the light guide serves the function of focusing. The narrow bottom surface along the light guide reflects the light with a series of highly reflective paint stripes of varying widths applied upon it. The light source comprises a plurality of light emitting elements and at least a center of the light emitting elements is placed along a normal line passing through a center of the reflection area when viewed in a longitudinal direction of the light guide.

Abstract: Slurry formulationf or CMP of organic-added low SOG dielectric was development. The SOG layers with various amount of organic content are subject to polish experiments using silica- and zirconia-based slurries with a variety of additives. The results indicate that, as the amount of organic content in SOG increases, CMP polish rate drops with silica-based KOH-added slurry. On the other hand, zirconia-based slurry could result in higher plish rate for both SOG (>400 nm/min) and thermal oxide. Polish selectivity ranging from 1.2 to 9.1 can be achieved by adding various amount of tetra-alkyl in ammonium hydroxide.

Abstract: An amorphous silicon based hole-injection type "Separate Absorption and Multiplication Avalanche Photodiode" ("SAMAPD") has been invented. The device was made by separating an absorption layer and an avalanche layer from a conventional APD (Avalanche Photodiode). This will make a majority of an voltage bias to go across on the avalanche layer (i.e., a high energy bandgap material) and to enlarge an avalanche multiplication effect (i.e., increasing optical gains). In addition, the voltage bias goes across on the absorption layer will be sufficiently small to reduce a dark current. Using an i-a-Si:H material as the avalanche layer material and an i-a-Si.sub.1-x :Ge.sub.x :H material as the absorption layer material, the hole-injection type SAMPAD yields a very high gain, i.e., 686, at a reverse bias of 16V under an incident light power of P.sub.in =1 .mu.w. The product of this invention is very suitable for use in a long distance optical communication.

Abstract: The present invention provides improved apparatus and process for the dilution and delivery of both high-purity chemicals as well as slurry chemicals from one or more bulk sources to an end-user. The present system utilizes two or more metered vessels which are connected to bulk chemical sources via intake lines. Each metered vessel contains an adjustable, swingable angle pipe, which drains any excess chemical by gravity flow from the metered vessel so as to adjust the chemical amount to a predetermined desired level. As the chemicals exit the angle pipes, sensors located at the end of the angle pipes sense the chemical being discharged and trigger the feed pump and valve to shut off, whereby the excess chemicals will continue to drain out until the chemical levels reach the same level as the vent port of the pipe attached to the metered vessels. The chemicals are drawn into the metered vessels from the bulk sources via a feed pump or pressure mechanism.

Abstract: An improved phone plug comprises a housing having a rear-receiving end and a plugging end, a number of inductors and conductors. The plug-receiving socket is formed in the rear-receiving end and adapted to receive a modular phone plug; the plugging end being so formed that the plugging end can be plugged into a regular phone jack coupled to the phone line system including the data network. The conductors are mounted in the housing and have first ends and second ends; the first ends projecting into the plug-receiving socket for engaging a contact of the modular phone plug when the modular phone plug is inserted into the plug-receiving socket; the second ends coupled respectively to the plugging end through the inductors.

Abstract: The present invention relates to an apparatus and method of making a Dense Wavelength-Division Multiplexer (DWDM) using a Fused-Biconical Taper ("FBT") technique. The DWDM according to the present invention comprises a multiple of Multi-window Wavelength-Division Multiplexers ("MWDMs") which cascade together in several stages, each stage has several MWDMs having an identical window spacing. For a N-channel DWDM, there are 2.sup.m-1 MWDMs cascaded in m-th stage, and the window spacing of the m-th stage MWDMs is 2.sup.m-1 .DELTA..lambda., where m is from 1 to (logN/log2), for example, the first stage(m=1) having 1 MWDM and the window spacing is .DELTA..lambda., the second stage(m=2) having 2 MWDMs and the window spacing is 2.DELTA..lambda., the third stage(m=3) having 4 MWDMs and the window spacing is 4.DELTA..lambda., etc., and the (logN/log2)-th stage has (N/2) MWDMs with a window spacing (N/2).DELTA..lambda.. The number N could be 2, 4, 8, 16 or more.

Abstract: The present invention provides antineoplastic .alpha.-methylene-.gamma.-butyrolactones represented by the general formula ?I! wherein R.sub.1 is a phenyl group optionally substituted with one or two groups selected from the group consisting of halide, (C.sub.1 -C.sub.4)alkyl, (C.sub.1 -C.sub.4)alkoxy, phenyl, nitro and amino;.sub.2 R represents hydrogen, halide, (C.sub.1 -C.sub.4)alkyl or benzyl; X represents N; or wherein R.sub.1 is a phenyl group optionally substituted with one or two groups selected from the group consisting of halide, (C.sub.1 -C.sub.4)alkyl, (C.sub.1 -C.sub.4) alkoxy, nitro and amino; R.sub.2 represents Cl, F, or benzyl; X represents CH. These .alpha.-methylene-.gamma.-butyrolactones may be administered with an inert diluent or with a pharmaceutically acceptable carrier in controlling the growth of a neoplasm in a patient afflicted with a neoplasm disease.

Abstract: The present invention relates to a stacked memory capacitor of a DRAM cell, particularly, relates to a DRAM cell having a memory capacitor whose storage electrode possesses a remarkably increase area without increasing its occupation area and the complexity of fabrication thereof. By disposing the storage electrode of the memory capacitor on a rugged stacked oxide layer, the area of the storage electrode is remarkably enlarged since the growing of the storage electrode made of a doped polysilicon layer is followed along the topography of the rugged stacked oxide layer, thereby, resulting in a rugged surface thereof. The entire rugged surface of the storage electrode is covered with a dielectric layer to form a plate electrode made of a doped polysilicon layer. The memory capacitor provided by the invention achieves a higher capacitance while maintaining the same occupation area and packing density as that of the conventional arts.

Abstract: The present invention discloses a two way, rear view mirror suitable for providing alternatively or simultaneously both a conventional reflected image and a video image. A preferred two way mirror of the invention comprises a flat transparent plate coated with or glued with a reflective film mounted within a casing which provides supports for the mirror and a mounting space for at least one video display monitor with a built-in light source mounted in said casing and positioned directly behind said reflective film to receive and display image received from a variety of information sources.

Abstract: The present invention relates to a method of forming a self-aligned contact (SAC) window employing the liquid phase deposition (LPD) that allows low temperature deposition and selective growing of a LPD-SiO.sub.2 film as a stress-buffer layer to prevent WSi peeling during the formation of the SAC window. Specifically, the method comprises the steps of forming a nitride cap and a gate consisting of a WSi layer and a polysilicon layer over a surface of a silicon substrate followed by the formation of the sources and drain regions on the silicon substrate as well as by the process of forming the LPD-SiO.sub.2 film. A nitride spacer is formed at a sidewall of the nitride cap and the gate, and the SAC window is then formed by depositing a dielectric layer such as a SiO.sub.2 layer followed by exposing through a mask.

Abstract: The present invention relates to a connector for flexible conductive line components suitable for a lower mounted profile in a device mounted on a printed circuit board. The connector comprises a metal plate, resilient spring portions, and connection terminal portions wherein the resilient portions, which allow the metal plate and individual contacts to accommodate and clamp a inserted flexible printed circuit parallel with respect to the printed circuit board, are disposed such that the lengthwise spring extension thereof lies in the parallel direction, leaving the height unaffected. The metal plate further comprises a substantially U-shaped transverse cross section which affords both a low mounting profile and a stable connection that experiences minimal bending.

Abstract: This invention provides a novel pharmaceutical composition exhibiting remarkable anti-cancer, and cancer necrotizing properties as well as other desirable pharmacological properties. The composition is a mixture of toluene sulfonamide (e.g. para toluene sulfonamide) with a specifically designed solution which consists of polyethylene glycol, 2-ethyl-1,3-hexanediol, propanediol, decanedioic acid, dimethyl, sulfoxide and ethanol. The composition demonstrates promising therapeutical activity in preliminary human clinical tests and exhibits very little undesirable side effects.

Abstract: A physical switch system employing a N:M switch circuit, coupled with a layer 2 switch at one end and with a network interface at the other end, for data network system is disclosed. The N:M switch comprises N number of ports on one side and M number of ports on the other side, wherein N and M are not necessarily the same. Based on the addresses describing each of the ports, the N:M switch is capable of establishing electronic links between the ports on both sides and further disengaging the links therebetween upon detecting the completion of data transmission. The disclosed switch system provides an efficient switching mechanism of rescalabitity and modularity in network switch systems.

Abstract: The present invention relates to a rugged stacked oxide layer structure which remarkably increases an area of a subsequent deposition layer over the rugged stacked oxide layer. The enlargement of the area of a deposition layer over the rugged oxide layer enables one to ameliorate an electrical characteristic of a device and provide a higher integration density. For example, the rugged stacked oxide layer can be used to provide a higher capacitance by enlarging the area of a storage electrode of a capacitor. Similarly it can also be used to increase light absorption of a photodetector per unit area by enlarging an interfacial area of a P-N junction of the photodetector.