Patents Represented by Law Firm Cushman Darby & Cushman, IP Group PF Pillsbury Madison & Sutro LLP
  • High capacitance capacitor manufacturing method
    Patent number: 5622889
    Abstract: A method for manufacturing a high capacitance capacitor having an HSG film formed on a stack-structured lower storage node, includes the step of forming insulating films for protecting the HSG film. In the present invention the lower storage node and the HSG film formed thereon are not damaged during an etch-back process. The HSG film formed on the lower storage node is protected by means of the insulating films, thereby preventing a decrease in capacitor capacitance.
    Type: Grant
    Filed: January 25, 1996
    Date of Patent: April 22, 1997
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Cha-young Yoo, Young-sun Kim, Young-wook Park, Se-jin Shim