Abstract: A miniature thin film microwave frequency acoustic filter device comprising acoustic resonators formed on the same dielectric membrane so that their frequency responses are identical. Because the filters are miniature, they can be manifolded without manifolding circuitry that normally causes significant filter losses.

Abstract: A linear acoustic charge transport circuit including an acoustic charge transport (ACT) device and a transconductance amplifier. In one embodiment the ACT device includes a bipolar injector. The ACT device can comprise either a thick channel ACT or a heterojunction ACT.

Abstract: Solid state image sensing apparatus including a readout circuit associated with each detector element. The readout circuit includes a clipping gate that operates to drain charge, from a charge storage region associated with the detector element, that is in excess of a potential barrier height of the clipping gate. The barrier height is first maintained at a lower value and then at a higher value during each frame integration period so that intensity range compression of a high level image signal is achieved, while a low level image signal is not affected by the operation of the clipping gate.

Abstract: The invention is directed to a frequency selective limiter. A ferrite member supports a signal carrying conductor and magnets establish a transverse magnetic field closely coupled with the conductor through the ferrite. The magnets establish a magnetic field strength versus temperature having a desired characteristic slope. A magnetic shunt, magnetically coupled to the magnets, diverts a portion of the magnetic field lines away from the ferrite for reducing the magnitude of the field coupled with the conductor to a lower value while maintaining the desired characteristic slope of the magnetic field strength with temperature. In a particular embodiment of the invention, the magnetic shunt establishes magnetic field lines within the ferrite which lie at a selected angle with respect to the conductor so that the limiting characteristic of the FSL is relatively flat across the bandwidth.

Abstract: A linear FM waveform generator employs direct digital synthesis and includes a digital linear FM signal generator, a digital-analog converter, and a sampler means. The linear FM waveform generator includes a frequency slope register coupled to a first stage integrator which in turn is coupled to a second stage integrator, all of which operate off a system clock. The output signal from the second stage integrator represents phase as a quadratic function of time. A stored sine look-up table is referenced to generate an output digital signal representing amplitude as a function of time. The output digital signal is converted to an analog linear FM waveform which in turn is coupled to a sampler that includes a step recovery diode and a fast switch.

Abstract: An infrared (IR) imaging device includes substantially identical top and bottom IR detector arrays. In separate embodiments, either a top or bottom surface of the top array is stacked onto the bottom array to confront a top surface of the bottom array and so that individual detector elements and subarrays of the top array are aligned with corresponding detector elements and subarrays of the bottom array. The image readout circuits of both the top and bottom array are connected by wire bonding to readout control circuits formed in the peripheral region of the wafer in which the bottom array is formed.

Abstract: A process for forming an insulating layer of silicon dioxide in a silicon substrate that surrounds and electrically insulates a semiconductor device is disclosed herein. The process comprises the steps of forming a recess on the outer surface of the silicon substrate that encompasses the site of the semiconductor device by photo-resist patterned reactive ion etching, and then removing silicon on the surface of the resulting recess whose crystal structure has been damaged by the reactive ion etching. Next, dopant atoms are selectively deposited on the surface of the recess so that the surface of the recess might be rendered into a porous layer of silicon when immersed in hydrogen fluoride and subjected to an electrical current. Prior to the porousification step, silicon is epitaxially grown within the walls of the recess to form the site for a semiconductor device.

Abstract: A thin film electroluminescent edge emitter assembly includes a substrate layer having a configuration to define at least one lateral edge surface and at least one integrated circuit formed therein. The integrated circuit has an input for receiving logic signals, and has an excitation voltage input and a plurality of output leads. The output leads form control electrodes each having an end portion terminating at the substrate lateral edge surface. The integrated circuit is operable to provide an excitation voltage to selected control electrodes in response to preselected logic signals provided to the integrated circuit at the logic signal input.A laminar arrangement formed from a first dielectric layer, a second dielectric layer, a phosphor layer interposed between the first and second dielectric layers and a common electrode layer is disposed on the end portions of the control electrodes.