Abstract: Multi-dimensional objects or data may be represented in two dimensions, thereby facilitating understanding of the information or data. This reduction in the number of dimensions is accomplished by constructing unit vectors corresponding to the dimensions, in which the unit vectors share a common plane. Information objects or multi-dimensional data are plotted and represented as small features such as points on a display tied to a processor or computer. A user may gain insight into how the information is structured by performing certain transformations on it, such as scaling one (or more) unit vectors or rotating one or more unit vectors, followed by replotting the points.

Abstract: A biomolecular array includes a substrate across which is distributed an array of discrete regions of a porous substance formed from a porogen-containing organosilicate material. The porous substance is designed to bind chemical targets useful in biotechnology applications, such as gene expression, protein, antibody, and antigen experiments. The regions are preferably optically isolated from each other and may be shaped to enhance detection of optical radiation emanating from the porous substance, e.g., as a result of irradiation of the regions with ultraviolet light. The discrete regions may be configured as microscopic wells within the substrate, or they may reside on top of the substrate in the form of microscopic mesas.

Abstract: A racetrack memory device facilitates the manipulation of a series of domain walls along the racetrack. The racetrack is designed so that the domain wall energy increases and decreases in a continuous fashion between adjacent pinning sites, so that a domain wall does not become stuck between them. The variation in the domain wall energy along the racetrack can be provided by continuous variations of the racetrack's width (while maintaining constant thickness) and/or cross-sectional area (in which the racetrack dimensions are varied in both directions perpendicular to the length of the racetrack). Alternatively, this variation in domain wall energy may be provided by varying the magnetic properties of the racetrack along the racetrack while otherwise keeping the shape and size of the racetrack unchanged. In addition, variations of the racetrack's composition and/or shape can be used.

Abstract: ZnMg oxide tunnel barriers are grown which, when sandwiched between ferri- or ferromagnetic layers, form magnetic tunnel junctions exhibiting high tunneling magnetoresistance (TMR). The TMR may be increased by annealing the magnetic tunnel junctions. The zinc-magnesium oxide tunnel barriers may be incorporated into a variety of other devices, such as magnetic tunneling transistors and spin injector devices. The ZnMg oxide tunnel barriers are grown by first depositing a zinc and/or magnesium layer onto an underlying substrate in oxygen-poor (or oxygen-free) conditions, and subsequently depositing zinc and/or magnesium onto this layer in the presence of reactive oxygen.

Abstract: MgO tunnel barriers are formed by depositing a thin layer of Mg on a suitable underlayer, and then directing oxygen and additional Mg towards the Mg layer. The oxygen reacts with the additional Mg and the Mg in the Mg layer to form a MgO tunnel barrier that enjoys excellent tunneling characteristics. The MgO tunnel barriers so formed may be used in magnetic tunnel junctions having tunneling magnetoresistance (TMR) values of greater than 100%. The highest TMR values are observed for junctions that have been annealed and that have a (100) crystallographic orientation.

Abstract: Magnetic tunnel junctions are disclosed that include ferromagnetic (or ferrimagnetic) materials and a bilayer tunnel barrier structure. The bilayer includes a crystalline material, such as MgO or Mg—ZnO, and Al2O3, which may be amorphous. If MgO is used, then it is preferably (100) oriented. The magnetic tunnel junctions so formed enjoy high tunneling magnetoresistance, e.g., greater than 100% at room temperature.

Abstract: A racetrack memory storage device moves domain walls along the racetrack in one direction only. The reading element can be positioned at one end of the racetrack (rather than in the middle of the racetrack). The domain walls are annihilated upon moving them across the reading element but their corresponding information is read into one or more memory devices (e.g., built-in CMOS circuits). The information can then be processed in circuits for computational needs and written back into the racetrack either in its original form (as it was read out of the racetrack) or in a different form after some computation, using a writing element positioned at the end of the racetrack opposite to the reading element. Such a racetrack can be built more simply and has greater reliability of operation than previous racetrack memory devices.

Abstract: A MgO tunnel barrier is sandwiched between semiconductor material on one side and a ferri- and/or ferromagnetic material on the other side to form a spintronic element. The semiconductor material may include GaAs, for example. The spintronic element may be used as a spin injection device by injecting charge carriers from the magnetic material into the MgO tunnel barrier and then into the semiconductor. Similarly, the spintronic element may be used as a detector or analyzer of spin-polarized charge carriers by flowing charge carriers from the surface of the semiconducting layer through the MgO tunnel barrier and into the (ferri- or ferro-) magnetic material, which then acts as a detector. The MgO tunnel barrier is preferably formed by forming a Mg layer on an underlayer (e.g., a ferromagnetic layer), and then directing additional Mg, in the presence of oxygen, towards the underlayer.

Abstract: A tunnel barrier in proximity with a layer of a rare earth element-transition metal (RE-TM) alloy forms a device that passes negatively spin-polarized current. The rare earth element includes at least one element selected from the group consisting of Gd, Tb, Dy, Ho, Er, Tm, and Yb. The RE and TM have respective sub-network moments such that the absolute magnitude of the RE sub-network moment is greater than the absolute magnitude of the TM sub-network moment. An additional layer of magnetic material may be used in combination with the tunnel barrier and the RE-TM alloy layer to form a magnetic tunnel junction. Still other layers of tunnel barrier and magnetic material may be used in combination with the foregoing to form a flux-closed double tunnel junction device.

Abstract: A memory device utilizes a phase change material as the storage medium. The phase change material includes at least one of Ge, Sb, Te, Se, As, and S, as well as a nitride compound as a dopant. The memory device can be a solid-state memory cell with electrodes in electrical communication with the phase change medium, an optical phase change storage device in which data is read and written optically, or a storage device based on the principle of scanning probe microscopy.

Abstract: A document (or multiple documents) is analyzed to identify entities of interest within that document. This is accomplished by constructing n-gram or bi-gram models that correspond to different kinds of text entities, such as chemistry-related words and generic English words. The models can be constructed from training text selected to reflect a particular kind of text entity. The document is tokenized, and the tokens are run against the models to determine, for each token, which kind of text entity is most likely to be associated with that token. The entities of interest in the document can then be annotated accordingly.

Abstract: Magnetic tunnel junctions are disclosed that include ferromagnetic (or ferrimagnetic) materials and a bilayer tunnel barrier structure. The bilayer includes a crystalline material, such as MgO or Mg—ZnO, and Al2O3, which may be amorphous. If MgO is used, then it is preferably (100) oriented. The magnetic tunnel junctions so formed enjoy high tunneling magnetoresistance, e.g., greater than 100% at room temperature.

Abstract: Letters (more generally, language symbols) are entered electronically by selecting, in sequential fashion, two keys on a standard phone layout. The first key in the two-key sequence is that key on which the desired letter is displayed. The keys and the letters displayed on the keys are marked in such a way that the markings suggest the second key in the two-key sequence. The letters displayed on the keys have respective markings, such as a color, with each letter on a given key having a unique marking. The keys themselves also have markings that match the markings of the letters. In preferred embodiments, the two keys in the two-key sequence are located in the same row. Letters may be selected to spell out words on a screen and then sent electronically to a remote device or recipient.

Abstract: Magnetic tunneling devices are formed from a first body centered cubic (bcc) magnetic layer and a second bcc magnetic layer. At least one spacer layer of bcc material between these magnetic layers exchange couples the first and second bcc magnetic layers. A tunnel barrier in proximity with the second magnetic layer permits spin-polarized current to pass between the tunnel barrier and the second layer; the tunnel barrier may be either MgO and Mg—ZnO. The first magnetic layer, the spacer layer, the second magnetic layer, and the tunnel barrier are all preferably (100) oriented. The MgO and Mg—ZnO tunnel barriers are prepared by first depositing a metallic layer on the second magnetic layer (e.g., a Mg layer), thereby substantially reducing the oxygen content in this magnetic layer, which improves the performance of the tunnel barriers.

Abstract: A biomolecular array includes a substrate across which is distributed an array of discrete regions of a porous substance formed from a porogen-containing organosilicate material. The porous substance is designed to bind chemical targets useful in biotechnology applications, such as gene expression, protein, antibody, and antigen experiments. The regions are preferably optically isolated from each other and may be shaped to enhance detection of optical radiation emanating from the porous substance, e.g., as a result of irradiation of the regions with ultraviolet light. The discrete regions may be configured as microscopic wells within the substrate, or they may reside on top of the substrate in the form of microscopic mesas.

Abstract: Magnetic tunnel junctions are constructed from a MgO or Mg—ZnO tunnel barrier and amorphous magnetic layers in proximity with, and on respective sides of, the tunnel barrier. The amorphous magnetic layer preferably includes Co and at least one additional element selected to make the layer amorphous, such as boron. Magnetic tunnel junctions formed from the amorphous magnetic layers and the tunnel barrier have tunneling magnetoresistance values of up to 200% or more.

Abstract: Magnetic tunnel junctions are disclosed that include ferromagnetic (or ferrimagnetic) materials and a bilayer tunnel barrier structure that includes a layer of alkaline earth oxide. The bilayer also includes a layer of crystalline material, such as MgO or Mg—ZnO. If MgO is used, then it is preferably (100) oriented. The magnetic tunnel junctions so formed enjoy high tunneling magnetoresistance, e.g., much greater than 100% at room temperature.

Abstract: Magnetic tunnel junctions are disclosed that include ferromagnetic (or ferrimagnetic) materials and a bilayer tunnel barrier structure that includes a layer of a rare earth oxide. The bilayer also includes a layer of crystalline material, such as MgO or Mg—ZnO. If MgO is used, then it is preferably (100) oriented. The magnetic tunnel junctions so formed enjoy high tunneling magnetoresistance, e.g., much greater than 100% at room temperature.

Abstract: An electromechanical storage device includes an input element that facilitates the input of data, a series of data elements, and a terminating element that facilitates the reading out of data. The data elements each have at least two stable mechanical orientations, and these orientations can be utilized to store data. Data may be entered into the device by applying a transient electromagnetic pulse to the data elements. The device is constructed such that as a data bit is entered into the series of data elements, any data bits that have been previously entered into the series are shifted towards the terminating element.

Abstract: Magnetic material, which is not normally bcc-structured under ambient conditions, is induced into becoming bcc as a result of its proximity to a suitable templating material, such as a bcc-structured underlayer that is in contact with the magnetic material. The magnetic material, in combination with a tunnel barrier and other elements, forms a magnetic tunneling device, such as a magnetic tunnel junction that may have a tunneling magnetoresistance of 100% or more. Suitable tunnel barriers include MgO and Mg—ZnO, and the magnetic material may be Co. The templating material may include such elements as V, Cr, Nb, Mo, and W, or the tunnel barrier MgO may itself serve as the templating material.