Abstract: An infant seat for cantilever mounting to a tabletop includes a pair of spaced-apart support members. Each support member is disposed on either side of the infant seat and includes a top portion adapted for contacting the upper surface of a tabletop, and a bottom portion adapted for contacting the under surface of a tabletop. When a baby is placed in the seat, the weight of the baby in cooperation with the top and bottom portions of the spaced-apart support members provides cantilever mounting of the seat to the tabletop. In addition, the infant seat includes a clamping support assembly which has a member projecting generally outwardly and upwardly as it extends from a forward side of a seat bottom. A telescoping member in association with a spring is capable of extensible and retractable movement from a distal end of the upwardly and outwardly projecting member.

Abstract: In a telephone of the type wherein the receiver emits both voice and ringing signals, a gravity switch is electrically connected in parallel to a resistor, and such parallel connected elements are coupled between the ringing circuitry of the telephone and the receiver. Both the receiver and the gravity switch are housed within the telephone handset. When the handset is in its normal position the gravity switch provides a conductive path for the ringing signal from the ringing circuitry to the receiver. However, when the handset is tiltably displaced from its normal position, the conductive path through the gravity switch is broken, thereby causing the ringing signal to traverse the resistor. Passage of the ringing signal through the resistor results in the attenuation of this signal. Thus, when the handset or gravity switch is in its normal position, the receiver emits an audible ringing signal at a predetermined maximum decibel level.

Abstract: A brake compensator for a vehicle using a resilient device or resilient elastomeric material which is connected to the cable or the cable sheath of a cable-controlled brake, and is extended or compressed in response to a force applied thereon when a brake is applied. In one embodiment, the resilient device is disposed between the sheath and the frame of a vehicle, and is arranged so that the control cable passes directly through the compensator and to a brake caliper. In a further embodiment, the brake compensator may be disposed between the sections of sheath around a continuous brake cable. This arrangement avoids the need for an assembly to mount the compensator to the vehicle frame. Apparatus is shown for pre-loading the resilient device and thereby advantageously adjusting for different product and rider characteristics. Additionally, structure may be provided for limiting the maximum compression, beyond which the cable and sheath operate in a conventional manner.

Abstract: An alarm system includes a security loop comprising a plurality of sensors, a circuit connected to the security loop and an alarm. The circuit is responsive to a change in condition within the security loop, and upon any change over a threshold value or substantially any change which is rapid, irrespective of value, the responsive circuit functions to enable the alarm. The alarm may be of audible and/or visual-type with additional capability of signalling a remote control center. The responsive circuit includes a network for self-balance thereby to compensate for changes which are responsive to ambient conditions.

Abstract: A system for connecting wall partitions or panels together wherein sets of two cross-drilled blind holes are formed in the ends of the partitions to be joined, one hole being of smaller diameter and opening on the end surface of the partition and the other hole of larger diameter opening on one of the side faces. The connector hardware involves three basic parts including a cylindrical plug member, in the larger diameter hole and has a threaded axial bore in one end and a communicating cross bore toward the other end, which bore also communicates with the smaller diameter hole. A second cylindrical connector member, is closely accommodated in the smaller diameter hole and in the cross bore of the plug member, and has a threaded axial bore in one end and a tapered groove or waist portion along its length. The third connector part constitutes a screw member that is adapted to be screwed into the axial bores in each of the cylindrical members.

Abstract: The control system maintains air temperature comfort in a zone of a commercial structure. Outside air is supplied into the zone for ventilation purposes and for cooling the zone to the desired temperature whenever possible to minimize the use of mechanical air cooling apparatus and thereby reducing energy consumption. Heating and cooling coils temperature condition the supplied air. A pneumatic control system selectively activates the heated, cooled or ventilated air supplied in the zone. A two-speed supply fan, controlled by the pneumatic control system, operates in a first state at only low speed to reduce energy consumption, or in a second state at automatic thermostat two-speed control (high or low). The fan in this second state operates at low speed except when maximum cooling is required and then switches back to low speed operation from high speed when the ambient temperature in the zone approaches the desired temperature.

Abstract: Applying a D. C. glow discharge to a heated glassy substrate in an evacuated chamber to which a volatile hydrocarbon has been added, produces a glassy substrate coated with a hard, transparent, resistive, amorphous carbon coating.

Abstract: A body of semiconductor material of an electroluminescent device is on a gallium arsenide substrate of N type conductivity. The body includes a first region of N type conductivity aluminum gallium arsenide contiguous to a surface of the substrate and a second region of silicon doped P type gallium arsenide on the first region and spaced from the substrate. The P-N junction between the first and second regions is a heterojunction, and is the only heterojunction with the second region. The second region is of a thickness, extending from the P-N junction, in the range of 50 to 200 micrometers. The electroluminescent device is capable of transient response time of 0.2 microseconds or less.

Abstract: A body of semiconductor material has opposed end surfaces, opposed side surfaces extending to the end surfaces and opposed first and second contact surfaces which are substantially perpendicular to the end and side surfaces. The body includes a substrate having on a surface thereof a mesa shaped active region which extends to the first contact surface. The active region has side surfaces which are spaced from the side surfaces of the body. Also on the substrate are passive regions which extend from the side surfaces of the active region to the first contact surface and side surfaces of the body. The active region has a P-N junction therein. The passive regions each include a plurality of contiguous passive layers having, P-N junctions therebetween. The P-N junctions of the passive regions extend from the first contact surface to the side surface of the body. Metallic electrodes are on each of the contact surfaces. The passive regions serve to restrict current flow to the active region.

Abstract: An A-B etchant is applied to a (100) surface of a body of semiconductor material, a portion of which along the (100) surface of the body is either gallium arsenide or gallium aluminum arsenide. The etchant is applied for at least 15 seconds at a temperature of approximately 80.degree. C. The A-B etchant is a solution by weight percent of 47.5%, water, 0.2% silver nitrate, 23.8% chromium trioxide and 28.5% of a 48% aqueous solution of hydrofluoric acid. As a result of the application of the A-B etchant a pattern of elongated etch pits form having their longitudinal axes along the [011] crystalline direction. Grooves are formed in the body at a surface opposite the (100) surface on which was applied the etchant. The grooves are formed along the [011] crystalline direction by aligning the longitudinal axes of the grooves with the longitudinal axes of the etch pits.

Abstract: A body of a photovoltaic device is of silicon having gallium and arsenic paired molecular impurities of a concentration on the order of 10.sup.18 atoms/cm.sup.3 or greater.

Abstract: A semiconductor device has one surface of P type conductivity material having a wide energy bandgap and a large crystal lattice parameter. Applied to the P type surface of the semiconductor device is a degenerate region of semiconductor material, preferably a group III-V semiconductor material, having a narrower energy bandgap. The degenerate region is doped with tin to increase the crystal lattice of the region to more closely approximate the crystal lattice of the one surface of the semiconductor device. The degenerate region is compensatingly doped with a P type conductivity modifier. An electrical contact is applied to one surface of the degenerate region forming an ohmic contact with the semiconductor device.

Abstract: A body of single crystalline semiconductor material has a first region of one conductivity type spaced from a second region of an opposite conductivity type with a third region between and contiguous to each of the first and second regions. The junctions between the third and each of the first and second regions are heterojunctions. At the peak emission wavelength of the third region the index of refraction of each of the first and second regions is at least 3% less than the index of refraction of the third region. Furthermore, each of the first and second regions has an energy band gap greater than that of the third region, with the difference in the energy band gap being greater than 0.1 eV. The thickness of the third region between heterojunctions is less than 0.125 microns.

Abstract: The body of a PIN photodiode is of a silicon semiconductor material. The PIN photodiode has a large area incident surface on which light impinges and is operated at high voltages. In the fabrication of a PIN photodiode, as described, a high concentration of N-type dopant is deposited on the body. It has been discovered that if a phosphorus silicate glass, as a source of N-type dopant, is in contact with a surface of the PIN photodiode body in a high temperature ambient and for an extended period of time, lattice damage on the surface of the silicon body results. These lattice defects are responsible for premature voltage breakdown in the device. In a first method of fabrication of PIN photodiode devices the phosphorus silicate glass is on the silicon surface for about 12 minutes after which it is removed and then any phosphorus atoms in the surface of the body are diffused into the body.

Abstract: Solar radiation is concentrated on a solar cell of a photovoltaic device in the range of 500 to 1600 suns. the photovoltaic device includes a plurality of solar cells on a flat surface of a heat sink, and means for concentrating solar radiation on the solar cells. The solar cells have a surface on which the solar light is incident. This high concentration of solar energy on the solar cell will increase the solar cell operating temperature. The dimensions of the solar cells and the center to center spacing between solar cells is such that good thermal dissipation is maintained in the photovoltaic device.

Abstract: A body of semiconductor material of a solar cell device has a surface a portion of which is exposed to incident solar radiation, and a surface opposite the incident surface. At the incident surface and in the body is a first region having a bandgap energy greater than 2.1 eV and thus is substantially transparent to solar radiation. Spaced from the first region and at the opposite surface is a second region which is of a material having a bandgap energy in the range of 1.5 eV to 1.9 eV. Between and in contact with both first and second regions is a third region of a material having a bandgap energy less than either the first or second regions. The third region is the most active region of the device, and the second region is substantially transparent to solar radiation not absorbed by the third region. The junction between the third region and each of the first and second regions are heterojunctions.

Abstract: A body of semiconductor material in a solar cell device has a means for collecting electron-hole pairs with an incident surface through which solar radiation enters. The collecting means can be a P N junction between two regions of opposite conductivity of the semiconductor body, or a partially transparent metallic film on the semiconductor body providing a metal to semiconductor material surface barrier rectifying junction. On a surface opposite the incident surface of the collecting means is a non-continuous oxide layer. The oxide layer is non-continuous because of openings extending through the oxide layer to the opposite surface. The openings are distributed across the opposite surface. In the openings at the opposite surface and on the oxide layer is a reflecting contact which functions both as an electrical contact and as a reflector to solar radiation in the semiconductor body.

Abstract: A contact of an indium gallium arsenide alloy forms an ohmic contact with a body of n-type or p-type single crystal gallium arsenide of a resistivity of 1 ohm-cm or greater. The method for forming the contact utilizes a low temperature range. This low temperature range lessens the amount of surface disassociation and aids in the prevention of contamination of the body of gallium arsenide.