Abstract: An electrochromic display utilizing a rare-earth diphthalocyanine complex as the electrochromic material and a low-freezing-point aqueous solution of a metal chloride as the electrolyte is disclosed. Displayed information can be switched in less than 50 milliseconds. The display has multicolor and color reversal capabilities even at very low temperatures.

Abstract: A device for reading information representing magnetization patterns on a medium by means of a time-of-flight magnetotransistor detector. The time-of-flight magnetotransistor detector consists of a bipolar transistor implemented on a semiconductor surface which is in a magnetic flux coupling with a plurality of magnetization patterns. Such magnetization patterns which may be generated by a magnetic bubble domain on an adjacent bubble domain device or by a magnetized region on an adjacent media such as a magnetic tape or disk. The magnetotransistor detector consists of an emitter region, an elongated base region, and a collector region, and a twin-lead thin-film transmission line in capacitive coupling with the base region of the magnetotransistor. The presence of a magnetic field in the base region creates a Hall voltage which produces a pulse on the transmission line.

Abstract: A silicon-on-sapphire semiconductor structure, and method of fabricating such structure, in which a silicone nitride layer is provided over the oxide layer. The silicon nitride layer is disposed over the upper edge of the silicon island, and acts to prevent gate oxide breakdown.

Abstract: A parametric amplifier including a semiconductor body portion (10) comprising a plurality of zones (11,13,15, . . . ) of a first conductivity type, each of the zones having a thickness less than or equal to the Debye length in the semiconductor body portion (11,13,15, . . . ), each of the zones being separated from one another by corresponding insulating layers (12,14, . . . ). The body portion has a first edge portion abutting a first edge of the plurality of zones, and a second edge portion abutting a second edge of the plurality of zones spaced apart from said first edge.A first interface (20) is provided adjacent the first edge portion for transmitting an electromagnetic wave into the semiconductor body portion for propagation therein; and a second interface (21) is provided adjacent the second edge portion for receiving an electromagnetic wave propagating in the body portion.

Abstract: A magnetic bubble domain device including a segmented stretcher detector. The detector is formed from a propagation path for magnetic bubble domains, and a first replicator disposed adjacent the propagation path. The first replicator functions to replicate one of the propagating bubble domains into a pair of magnetic bubble domains, and to transfer one of the bubble domains into a first secondary track extending in a direction different from the direction of the propagation path. A second replicator is disposed along the propagation path and functions to replicate the one bubble domain into a pair of magnetic bubble domains and to transfer one of the bubble domains into a second secondary track extending generally in the first direction. Finally, the detector is disposed along the first direction and functions to detect the plurality of magnetic bubble domains.

Abstract: A method of fabricating a microelectronic circuit device on a substrate by forming a layer of electrically and thermally conductive material (13) on a surface of a substrate (10). Channels are then etched in the layer of conductive material (13) to form patterns of the conductive material which are delineated from the remainder of the layer of conductive material.The channels are filled with an electrically insulating material (21, 22, 23) so as to form a substantially planar surface layer on the substrate. Finally, a microelectronic circuit device (e.g., 25) is formed on the substantially planar surface.

Abstract: An optical system including a radio frequency signal input; a chirp signal input; a source for emitting a beam of radiation; an acousto-optical modulator disposed in the path of the beam and functioning to modulate the beam with the radio frequency signal and the chirp signal to produce a modulated beam; and a single detector disposed in the path of the third modulated beam. The inventor further provides electronic alignment and focusing by changing the chirp frequency.

Abstract: An optical system for performing a cosine transform on an input RF signal is described. The optical system includes a source for emitting a beam of radiation, and an acoustic-optical modulation device disposed in the path of the beam and functioning to modulate at least two spaced-apart spatial portions of the beam with different signals to produce two modulated beams.A Fourier transfer lens is provided which is disposed in the path of the two modulated beams for combining the two beams, and a detector is disposed in the path of the Fourier transform beam at the focal plane of the Fourier transfer lens.

Abstract: A magnetic bubble domain circuit which permits the information in two separate propagation paths to crossover each other without deleterious effects. The crossover junction includes at least two definable propagation paths, a merge device for joining the paths, and an active transfer junction between the two paths. The information on the two paths is arranged to become interleaved or intermixed at the merge and to be separated at the active transfer switch arrangements are made for crossing over a plurality of propagation paths by using information properly timed or spaced, or, in the alternative, using a multiple junction arrangement.

Abstract: An optical system including a radio frequency signal input; a chirp signal input; a source for emitting a beam of radiation; a first acousto-optical modulator disposed in the path of the beam and functioning to modulate the beam with the radio frequency signal to produce a first modulated beam; a second acousto-optical modulator disposed in the path of the first modulated beam to modulate the beam with the chirp signal to produce a third modulated beam; and a single detector disposed in the path of the third modulated beam.

Abstract: A digital signal synchronization system including a digital signal source for supplying an input digital signal, and a plurality of substantially identical integrating circuits, each connected to the digital signal source for integrating the signal for a predetermined time. A plurality of clock sources are also provided, each connected to a corresponding one of the integrating circuits, so that each integrating circuit begins integrating the digital signal at a different time. Decision circuits are connected to the output of each of the integrating circuits for electing one of the integrating circuits according to a predetermined criteria.

Abstract: A voltage generator circuit for producing an output voltage which tracks the threshold voltage variation of the MOS devices on the semiconductor body, the magnitude of the output voltage being equal to or slightly greater than the absolute magnitude of the threshold voltages. The circuit includes two MOSFETs having their conduction paths connected in electrical series, each MOSFET having an applied gate-to-source voltage of 2V.sub.T. The voltage output terminal is connected to the node between the series connected conduction path terminals of the first and second MOSFETs. Three series connected MOSFETs which form a source follower circuit are also provided for providing the required gate-to-source voltage on the first two MOSFETs.

Abstract: A charge coupled digital-to-analog converter in which the digital input lines are connected to respective storage wells which store a predetermined amount of charge corresponding to the significance of the input line. A transfer gate is also provided for substantially simultaneously transferring and combining the charge packets to an analog output.

Abstract: A method of fabricating a bubble domain device composite structure on a substrate of depositing a barrier layer of a suitable polymeric dielectric material on the substrate; subsequently depositing a layer of electrically conductive material thereover; subsequently depositing a spacer layer of a liquid polymeric dielectric material over the conductive layer; processing the spacer layer so that the surface of the spacer layer is substantially planar; and subsequently depositing a layer of a magnetically operative material over the spacer layer.

Abstract: This invention is directed to a multicolored display which is based upon the rare-earth dipthalocyanines, and having a protonconductive, solid electrolyte which is selected for the electrochemical compatibility thereof with the electrochromic material in the display. Typically, the solid electrolyte consists of hydrogen uranyl phosphate or a related heteropoly acid.

Abstract: Briefly, and in general terms, the present invention provides a process for fabricating a semiconductor device, the device includes a semiconductor substrate having a major surface including an ion implanting region, wherein one fabrication step in the process subsequent to the formation of the ion implantation region is to direct a beam of microwave radiation at the device for annealing the ion implanted regions.

Abstract: An improved layout for controlling the channel length of silicon gate, enhancement and depletion pull-up field effect transistor devices. The improved layout enables a transistor device to be fabricated with minimal size and at minimum channel length tolerance.

Abstract: An active replicate/transfer magnetic bubble domain switch which is especially compatible with gap tolerant structures is provided. The switch includes a broadfaced corner element of relatively massive structure which retains the bubble domain for more than one field cycle. The switch characteristics are superior to those of existing switches both at the 8 .mu.m and 16 .mu.m periods. The switch offers the advantages of good bias and phase margins, ease of fabrication and reduced drive field requirements. In the 8 .mu.m, version the device requires a substantially lower drive field than the pickax design by virtue of reduced bubble-bubble interaction in the minor loops.

Abstract: A three dimensional merged field effect transistor device, and circuits incorporating such devices, which are fabricated from two or more bodies of semiconductor material disposed on a carrier or substrate. The structure includes at least two bodies of semiconductor material, each body consisting of material of both a first and a second conductivity type. Each body has two spaced apart surfaces such that a portion of the first surface of the first body is disposed adjacent to a surface of the second body and separated therefrom by a dielectric layer so that the surface portion on the first body forms the gate electrode of a first field effect transistor, and the source, channel, and the drain regions of the first field effect transistor being formed by surface zones on the surface of the second body. On the second surface of the first body there are also three adjacent surface zones of alternating conductivity type which form the source, channel, and drain region of a second field effect transistor.