Patents Represented by Attorney David N. Koffsky
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Patent number: 4378255Abstract: A multilayer, III-V semiconductive structure can be disordered and shifted up in energy gap into a single crystalline form by a Zinc diffusion. More specifically, all or selected portions of a multilayer of either gallium arsenide/aluminum arsenide or gallium arsenide/aluminum gallium arsenide can be converted into single crystal aluminum gallium arsenide having a higher energy gap than that of the original structure by the process of a Zinc diffusion at low temperature. Other active devices can then be constructed in the higher energy gap material using established semiconductor processing steps.Type: GrantFiled: May 6, 1981Date of Patent: March 29, 1983Assignee: University of Illinois FoundationInventors: Nick Holonyak, Jr., Wyn D. Laidig
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Patent number: 4367368Abstract: An improved solar cell structure is described wherein the cell's front region is provided with a plurality of raised structures, each structure comprising a multilayer of a highly doped region and a high-low junction. On these raised structures sit the solar cell's conductive grid. By emplacing the multilayer structure directly underneath the front region metallized conductive grid, the efficiency losses which would have been present had the highly doped region extended entirely or partially across the front layer, are avoided and the high surface recombination velocity associated with the grid is masked.Type: GrantFiled: May 15, 1981Date of Patent: January 4, 1983Assignee: University Patents Inc.Inventor: Martin Wolf
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Patent number: 4361641Abstract: The surface of an electrically conductive substrate is electrolytically modulated to a predetermined profile by subjecting the surface to electrodeposition or electrodissolution through ionically conductive body portions of an ionic conductance resist which masks the surface. The rate of passage of ionic species to or from any given point along the masked surface is controlled by the trans-resist ionic conductance or resistance at that point. The predetermined surface profile is generated by providing the resist with a trans-resist ionic conductance or resistance profile which patterns the predetermined surface profile.Type: GrantFiled: November 10, 1981Date of Patent: November 30, 1982Assignee: University Patents, Inc.Inventors: John C. Angus, Kathleen M. Tomaswick, Uziel Landau
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Patent number: 4359265Abstract: A specular cavity is provided in which an optical receiver is emplaced. The cavity is provided with a series of V groove-like indentations (or pyramidal-type indentations) which redirect energy entering between the receiver and cavity structure onto the receiver. The aperture opening of each V groove is less than half the cavity opening and in most preferred embodiments, much less than half. This enables the optical receiver to be emplaced a distance g from the cavity wherein 0.414r<g.ltoreq.r (r is the radius of the receiver) leading to an attendant increase in energy concentration capability.Type: GrantFiled: January 18, 1980Date of Patent: November 16, 1982Assignee: University Patents, Inc.Inventor: Roland Winston
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Patent number: 4358316Abstract: An alloy capable of reversible sorption of hydrogen having the formula Fe.sub.1-x Mn.sub.x Ti.sub.1-y V.sub.y, where x is within the range from 0 to 0.2 and y is within the range of from 0.005 to 0.08.Type: GrantFiled: December 29, 1980Date of Patent: November 9, 1982Assignee: University Patents, Inc.Inventors: James Liu, Charles E. Lundin, deceased
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Patent number: 4332785Abstract: The reticulocyte content present in a specimen of red blood cells is quantitatively measured based upon the selective immunoreactivity of the reticulocyte portion of the specimen with a reticulocyte-specific antibody which is immunoreactive with proteinaceous material associated with reticulocytes but not associated with mature red blood cells. Such immunoreactive proteinaceous material may be transferrin, transferrin receptor, transcobalamin II, or transcobalamin II receptor. Various procedures are described for quantitating such selective immunoreactivity, including fluorescent and radioactive detection techniques employing direct or indirect fluorescent or radioactive labeling of the reticulocyte-specific antibody.Type: GrantFiled: April 9, 1980Date of Patent: June 1, 1982Assignee: University Patents, Inc.Inventors: Robert H. Allen, Paul A. Seligman
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Patent number: 4321114Abstract: Conjugated polymers are doped with dopant ions to a preselected room temperature electrical conductivity ranging from that characteristic of semiconductor behavior to that characteristic of metallic behavior, by means of an electrochemical procedure wherein the polymer is employed as one or both of the electrodes of an electrolytic cell, including as the electrolyte a compound which is ionizable into the dopant ions. Upon electrolysis of the electrolyte, the polymer, if used as the anode, becomes doped with anionic dopant ions to a p-type material; or if used as the cathode, becomes doped with cationic dopant ions to an n-type material.The above-described electrochemical doping procedure finds particularly useful application in the charging of novel secondary batteries in which a doped conjugated polymer is employed as one or both of the electrodes. Such secondary batteries, in their charged state, comprise a metal whose Pauling electronegativity value is no greater than 1.Type: GrantFiled: March 11, 1980Date of Patent: March 23, 1982Assignee: University Patents, Inc.Inventors: Alan G. MacDiarmid, Alan J. Heeger, Paul J. Nigrey
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Patent number: 4319937Abstract: In accordance with the finding of undesired, non-uniform, heterojunction layers in heterojunction light emitters, it has been determined that completely uniform layers can be grown by growing individual super thin layers (i.e., .ltoreq.200 A) of uniform composition and stacking as many of these layers as desired into a uniform "thick" (.about.0.1.mu.) layer. This growth is accomplished by employing an LPE system wherein the substrate and melt are brought into contact for only the period of time during which the constituents of the melt deposit on the substrate in proper ratios. Steady-state diffusion-limited growth is avoided. The substrate is then removed from the melt, the melt allowed to re-equilibrate, and the process repeated as many times as desired.Type: GrantFiled: November 12, 1980Date of Patent: March 16, 1982Assignee: University of Illinois FoundationInventors: Nick Holonyak, Edward A. Rezek
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Patent number: 4257055Abstract: Described is a heterostructure semiconductor device of sandwich type construction. The central layer exhibits high charge carrier mobility and a relatively narrow band gap characteristic. The outer sandwich layers exhibit low charge carrier mobilities and a larger band gap characteristic. Under quiescent conditions, the charge carriers from the outer sandwich layers reside in the central layer due to the "potential well" created by the band gap difference between the layers. The application of an appropriate electrical field to the central layer, aligned with the interface between the layers, causes a very rapid transfer of the electrons residing therein to the outer sandwich layers. This transfer results in the device exhibiting a negative resistance characteristic. Two and three terminal switching applications of the device are described as well as its application as a radiant energy detector.Type: GrantFiled: July 26, 1979Date of Patent: March 17, 1981Assignee: University of Illinois FoundationInventors: Karl Hess, Ben G. Streetman, Hadis Morkoc
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Patent number: 4226836Abstract: A process for separating molybdenum values from sea nodules which includes sulfation of the sea nodules, volatilization of the molybdenum values from the sea nodules and collection of the volatile molybdenum values.Type: GrantFiled: January 3, 1979Date of Patent: October 7, 1980Assignee: University Patents, Inc.Inventors: Harry Zeitlin, Quintus Fernando
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Patent number: 4225582Abstract: Live Bovine Herpesvirus A.T.C.C. VR-2003 is employed in vaccination of horses to confer immunity to infection by Equid Herpesvirus Type 1.Type: GrantFiled: March 8, 1979Date of Patent: September 30, 1980Assignee: The University of Illinois FoundationInventor: Robert A. Crandell
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Patent number: 4222903Abstract: Electrically conducting organic polymeric material having a preselected room temperature p-type electrical conductivity which may vary over the entire range characteristic of semiconductor behavior and into the range characteristic of metallic behavior, is prepared by controlled chemical doping of polyacetylene in the form of a polycrystalline film. Exceptionally high room temperature p-type electrical conductivity within the range of from about 0.1 to of the order of 10.sup.3 ohm.sup.-1 cm.sup.-1 is achieved with several electron acceptor dopants, including bromine, iodine, iodine chloride, iodine bromide and arsenic pentafluoride.Type: GrantFiled: May 4, 1978Date of Patent: September 16, 1980Assignee: University Patents, Inc.Inventors: Alan J. Heeger, Alan G. MacDiarmid, Chwan K. Chiang, Hideki Shirakawa
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Patent number: 4204216Abstract: Electrically conducting organic polymeric film material exhibiting a preselected room temperature n-type electrical conductivity ranging from that characteristic of semiconductor behavior to that characteristic of metallic behavior, is prepared by controlled electron donor doping of a polycrystalline film of polyacetylene with a metal dopant whose Pauling electronegativity value is no greater than 1.6. Preferred metal dopants are the alkali metals. The procedure may be employed in preparing polyacetylene film with a p-n junction formed by two adjacent portions of the film respectively provided wth p-type and n-type electrical conductivities.Type: GrantFiled: May 4, 1978Date of Patent: May 20, 1980Assignee: University Patents, Inc.Inventors: Alan J. Heeger, Alan G. MacDiarmid, Chwan K. Chiang, Shek-Chung Gau