Abstract: Methods, apparatus, and systems in accordance with this invention include memories that include a data array and a configuration array adapted to store configuration information for configuring the data array. The data array and the configuration array include a plurality of wordlines and a plurality of bitlines. The plurality of wordlines in the data array extend in the same direction as the plurality of wordlines in the configuration array. Likewise, the plurality of bitlines in the data array extend in the same direction as the plurality of bitlines in the configuration array. Numerous other aspects are disclosed.

Abstract: In a novel nonvolatile memory cell formed above a substrate, a diode is paired with a reversible resistance-switching material, preferably a metal oxide or nitride such as, for example, NixOy, NbxOy, TixOy, HfxOy, AlxOy, MgxOy, CoxOy, CrxOy, VxOy, ZnxOy, ZrxOy, BxNy, and AlxNy. In preferred embodiments, the diode is formed as a vertical pillar disposed between conductors. Multiple memory levels can be stacked to form a monolithic three dimensional memory array. In some embodiments, the diode comprises germanium or a germanium alloy, which can be deposited and crystallized at relatively low temperatures, allowing use of aluminum or copper in the conductors. The memory cell of the present invention can be used as a rewriteable memory cell or a one-time-programmable memory cell, and can store two or more data states.

Abstract: A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer: (a) has a dielectric constant in the range of about 5 to about 27, and (b) includes a material from the family consisting of XvOw, wherein X represents an element from the family consisting of Hf and Zr, and wherein the subscripts v and w have non-zero values that form a stable compound. Other aspects are also provided.

Abstract: In a first aspect, a method for forming a non-volatile memory cell is provided. The method includes (1) forming a metal-insulator-metal (MIM) antifuse stack including (a) a first metal layer; (b) a silicon dioxide, oxynitride or silicon nitride antifuse layer formed above the first metal layer; and (c) a second metal layer formed above the antifuse layer. The method also includes (2) forming a contiguous p-i-n diode above the MIM antifuse stack, the contiguous p-i-n diode comprising deposited semiconductor material; (3) forming a layer of a silicide, silicide-germanide, or germanide in contact with the deposited semiconductor material; and (4) crystallizing the deposited semiconductor material in contact with the layer of silicide, silicide-germanide, or germanide. The memory cell comprises the contiguous p-i-n diode and the MIM antifuse stack. Other aspects are provided.

Abstract: Methods and apparatus are provided for monitoring and encouraging health and fitness. In accordance with a first aspect, an apparatus is provided that is adapted to assist in weight loss and exercise. The apparatus comprises a personal digital assistant (PDA) having computer program code adapted to assist in at least one of calorie counting, meal selection, meal suggestion, weight monitoring, weight loss or gain monitoring, fat consumption monitoring, sugar consumption monitoring and salt consumption monitoring. The PDA also includes computer program code adapted to display historical data regarding at least one of calorie counting, meal selection, meal suggestion, weight monitoring, weight loss or gain monitoring, fat consumption monitoring, sugar consumption monitoring and salt consumption monitoring. Numerous other embodiments are provided, as are methods, systems and computer program products.

Abstract: In a first aspect, a system for monitoring a swing is provided that includes (1) a swing measurement device adapted to couple to a swinging object and to output a signal indicative of a characteristic of the swinging object; (2) a wireless transmitter coupled to the swing measurement device and adapted to wirelessly transmit the signal output by the swing measurement device; and (3) a wireless device adapted to receive the wirelessly transmitted signal and to provide information regarding the swinging object based on the received signal. The wireless device is a cellular telephone or personal digital assistant (PDA). Numerous other aspects are provided.

Abstract: Methods and apparatus for sensing a substrate in a high temperature environment are provided. The invention includes a support frame having one or more apertures; one or more optical devices positioned in and aligned by the one or more apertures and adapted to detect an edge of a substrate. The invention may also include a controller secured adjacent an end of the support frame, coupled to the one or more optical devices, and adapted to receive information from the optical devices, process the information, and determine a center of a substrate based on the processed information. The support frame may be adapted to thermally shield the one or more optical devices and the controller. Numerous other aspects are provided.

Abstract: A vertically oriented p-i-n diode is provided that includes semiconductor material crystallized adjacent a silicide, germanide, or silicide-germanide layer, and a dielectric material arranged electrically in series with the diode. The dielectric material has a dielectric constant greater than 8, and is adjacent a first metallic layer and a second metallic layer. Numerous other aspects are provided.

Abstract: In a first aspect, a first method is provided. The first method includes the steps of (1) providing a cache having a plurality of cache entries, each entry adapted to store data, wherein the cache is adapted to be accessed by hardware and software in a first operational mode; (2) determining an absence of desired data in one of the plurality of cache entries; (3) determining a status based on a current operational mode and a value of hint-lock bits associated with the plurality of cache entries; and (4) determining availability of at least one of the cache entries based on the status, wherein availability of a cache entry indicates that data stored in the cache entry can be replaced. Numerous other aspects are provided.

Abstract: In one aspect, a substrate processing apparatus is provided. The apparatus comprises a mechanism for forming a meniscus on a surface of a substrate by moving the substrate through a fluid; an air knife apparatus positioned to apply an air knife to shorten the meniscus formed on the surface of the substrate; and a drying vapor nozzle positioned to direct a drying vapor to the meniscus shortened by the air knife. Numerous other aspects are provided.

Abstract: A memory cell is provided that includes a semiconductor pillar and a reversible state-change element coupled to the semiconductor pillar. The semiconductor pillar includes a heavily doped bottom region of a first conductivity type, a heavily doped top region of a second conductivity type, and a lightly doped or intrinsic middle region interposed between and contacting the top and bottom regions. The middle region comprises a first proportion of germanium, and either the top region or the bottom region comprises no germanium or comprises a second proportion of germanium less than the first proportion. The reversible state-change element includes a layer of a resistivity-switching metal oxide or nitride compound selected from the group consisting of NiO, Nb2O5, TiO2, HfO2, Al2O3, CoO, MgOx, CrO2, VO, BN, and AlN. Numerous other aspects are provided.

Abstract: Methods involve using a memory array having memory cells comprising a diode and an antifuse, in which the antifuse is made smaller and programmed at lower voltage by using an antifuse material having a higher dielectric constant and a higher acceleration factor than those of silicon dioxide, and in which the diode is made of a material having a lower band gap than that of silicon. Such memory arrays can be made to have long operating lifetimes by using the high acceleration factor and lower band gap materials. Antifuse materials having dielectric constants between 5 and 27, for example, hafnium silicon oxynitride or hafnium silicon oxide, are particularly effective. Diode materials with band gaps lower than that of silicon, such as germanium or a silicon-germanium alloy, are particularly effective.

Abstract: Methods in accordance with aspects of this invention form microelectronic structures in accordance with other aspects of this invention, such as non-volatile memories, that include (1) a layerstack having a pattern including sidewalls, the layerstack comprising a resistivity-switchable layer disposed above and in contact with a bottom electrode, and a top electrode disposed above and in contact with the resistivity-switchable layer; and (2) a dielectric sidewall liner in contact with the sidewalls of the layerstack; wherein the resistivity-switchable layer includes a carbon-based material, and the dielectric sidewall liner includes an oxygen-poor dielectric material. Numerous additional aspects are provided.

Abstract: Methods of forming memory cells are disclosed which include forming a pillar above a substrate, the pillar including a steering element and a memory element, and performing one or more etches vertically through the memory element, but not the steering element, to form multiple memory cells that share a single steering element. Memory cells formed from such methods, as well as numerous other aspects are also disclosed.

Abstract: In some aspects, a method of fabricating a memory cell is provided that includes fabricating a steering element above a substrate, and fabricating a reversible-resistance switching element coupled to the steering element by fabricating a carbon nano-tube (“CNT”) seeding layer by depositing a silicon-germanium layer above the substrate, patterning and etching the CNT seeding layer, and selectively fabricating CNT material on the CNT seeding layer. Numerous other aspects are provided.

Abstract: A die is formed with different and optimized critical dimensions in different device levels and areas of those device levels using photolithography and etch techniques. One aspect of the invention provides for a memory array formed above a substrate, with driver circuitry formed in the substrate. A level of the memory array consists of, for example, parallel rails and a fan-out region. It is desirable to maximize density of the rails and minimize cost of lithography for the entire memory array. This can be achieved by forming the rails at a tighter pitch than the CMOS circuitry beneath it, allowing cheaper lithography tools to be used when forming the CMOS, and similarly by optimizing lithography and etch techniques for a device level to produce a tight pitch in the rails, and a more relaxed pitch in the less-critical fan-out region.

Abstract: Methods and apparatus are provided for a solid state non-volatile storage sub-system of a computer. The storage sub-system includes a write-once storage sub-system memory device and a write-many storage sub-system memory device. The write-once storage sub-system memory device includes a recoverable system configuration. Numerous other aspects are provided.

Abstract: Systems, apparatus and methods are disclosed for allowing electrical connection to an electrical end effector in a robot apparatus. In one aspect, an electrical coupling is adapted to provide electrical power to the electrical end effector in the vacuum chamber. The electrical coupling may include engaging electrical contacts. In some embodiments, at least one of the contacts may be suspended relative to a spring such that the engaging contacts do not rotate relative to each other during arm rotation of the robot. In other embodiments, inductively coupled coils are included. Numerous other aspects are provided.

Abstract: A method for forming a nonvolatile memory cell is provided that includes: (1) forming a rail-shaped first conductor above a substrate, (2) forming a rail-shaped second conductor above the first conductor, and (3) forming a substantially vertical first pillar disposed between the first conductor and the second conductor. The first pillar includes a vertically oriented p-i-n diode, and the p-i-n diode includes: (a) a bottom heavily doped region having a first conductivity type, (b) a middle intrinsic or lightly doped region, and (c) a top heavily doped region having a second conductivity type opposite the first conductivity type. The bottom heavily doped region is doped by implantation of arsenic ions and the top heavily doped region is doped by implantation of BF2 ions. Numerous additional aspects are provided.

Abstract: In a first aspect, a monoplace hyperbaric chamber providing Venturi induced gas circulation and ventilation is disclosed. The chamber includes a control and monitoring system that offers reduced oxygen consumption, duplex pressure gauges, referenced flow control, a patient activated stop function, an independent pressure time recorder, and/or a precise pressure control circuit that uses a 1:1 forced-balanced volume amplifier adapted to supply gas to and exhaust gas from the chamber through different penetrators and/or use flow-control check valves supplied with static reference or set pressures. A computer control and monitoring subsystem is also disclosed. Numerous other aspects are provided.