Patents Represented by Attorney Eugen Pacher
  • Patent number: 6091753
    Abstract: A novel superlattice quantum cascade (SLQC) laser has undoped SL active regions, with the dopant concentration in the injector region being selected, such that, under an appropriate electrical bias, the SL active region is substantially electric field free. The absence of dopant atoms in the SL active region results in reduced carrier scattering and reduced optical losses, with consequent low threshold current and/or room temperature operation. The novel laser emits in the mid-IR spectral region and can be advantageously used in measurement or monitoring systems, e.g., in pollution monitoring systems.
    Type: Grant
    Filed: May 1, 1998
    Date of Patent: July 18, 2000
    Assignee: Lucent Technologies Inc.
    Inventors: Federico Capasso, Alfred Yi Cho, Jerome Faist, Claire F. Gmachl, Albert Lee Hutchinson, Deborah Lee Sivco, Alessandro Tredicucci
  • Patent number: 5920424
    Abstract: We have found that it is possible to make a multistage optical fiber amplifier having a substantially flat gain band of spectral width of 40 nm or more, excellent noise figure (e.g.,<4 dB) and output power. Such amplifiers can advantageously be used, for instance, in multichannel WDM systems and analog CATV systems. A significant aspect of the amplifier is the provision of an optical loss element (exemplarily a multi-grating optical fiber filter) that provides, at least at one wavelength in the gain band, an attenuation of more than G/3 dB, where G is the average amplifier gain (in dB) in the gain band. A further significant aspect of the amplifier is the use of relatively longer amplifier fibers, which facilitates attainment of high output power and low noise figure. Exemplarily, the amplifier is a 2-stage amplifier comprising silica-based Er-doped amplifier fiber, with three-Gaussian filters between the stages.
    Type: Grant
    Filed: March 26, 1998
    Date of Patent: July 6, 1999
    Assignee: Lucent Technologies Inc.
    Inventors: Rolando Patricio Espindola, Paul Francis Wysocki
  • Patent number: 5912498
    Abstract: A high quality oxide layer has been formed on a GaN surface by a method that involves preparation of the GaN such that the surface is essentially atomically clean and essentially atomically ordered, and that further involves exposing the surface to evaporant from a GGG (gallium gadolinium garnet) evaporation source. MOS structures comprising the GaN/oxide combination have shown low leakage current, as well as charge accumulation and depletion.
    Type: Grant
    Filed: October 10, 1997
    Date of Patent: June 15, 1999
    Assignee: Lucent Technologies Inc.
    Inventors: William Scott Hobson, Minghwei Hong, James Robert Lothian, Joseph Petrus Mannaerts, Fan Ren
  • Patent number: 4341731
    Abstract: A method for efficiently generating thermal positions from a source of energetic positrons, consisting of a method for increasing the emission efficiency of the positron source, and a method for increasing the efficiency of a positron moderator. In an advantageous case the combined improvements lead to an about ten-fold increase in generated thermal positrons. The method for improving the source efficiency consists in reducing the self-absorption of positrons, typically emitted from radioactive atoms incorporated into a substrate by means of diffusion, by the source. This is accomplished by providing for a backing layer having a relatively small diffusion constant for the radioactive species, and a thin diffusion layer having a relatively large such diffusion constant, with the diffusion layer deposited onto the backing layer.
    Type: Grant
    Filed: January 7, 1980
    Date of Patent: July 27, 1982
    Assignee: Bell Telephone Laboratories, Incorporated
    Inventor: Allen P. Mills, Jr.