Abstract: A semiconductor device having a trench isolation layer in a semiconductor substrate is provided, wherein the trench isolation layer includes a silicon nitride liner, a silicon oxide liner; and a buried layer, wherein the buried layer includes a first buried layer for filling a lower part of the trench isolation layer and a second buried layer for filling an upper part of the trench isolation layer. A semiconductor device preferably further includes a silicon oxide layer disposed between the semiconductor substrate and the silicon nitride liner. The silicon oxide layer includes a thermal oxide layer densified at a temperature over about 800° C.

Abstract: In an illustrative embodiment, a speaker model is generated for each of a number of speakers from which speech samples have been obtained. Each speaker model contains a collection of distributions of audio feature data derived from the speech sample of the associated speaker. A hierarchical speaker model tree is created by merging similar speaker models on a layer by layer basis. Each time two or more speaker models are merged, a corresponding parent speaker model is created in the next higher layer of the tree. The tree is useful in applications such as speaker verification and speaker identification.

Abstract: A current mirror for providing a large current ratio and a high output impedance even in radio frequency operation and a differential amplifier including the same are provided. The current mirror includes a current source for supplying a reference current, a reference transistor, an output transistor, and a proportional-to-absolute temperature (PTAT) voltage generator. The current source has a first terminal connected to a first reference voltage and a second terminal. The reference transistor has a control electrode, a first current carrying electrode connected to the second terminal of the current source, and a second current carrying electrode connected to a second reference voltage. The output transistor has a control electrode, a first current carrying electrode connected to an output terminal to which a mirrored current flows, and a second current carrying electrode connected to the second reference voltage.

Abstract: An optical disc system for efficiently controlling a sled motor is provided. The optical disc system has a sled motor for moving an optical pick-up; a digital servo core to generate a first and a second sled control signal; a microcomputer for generating a selecting signal, a third and a fourth sled control signal for controlling the sled motor; a first and a second selecting unit for receiving the selecting signal and selecting and outputting one of the first and third sled control signals and selecting and outputting one of the second and fourth sled control signals, respectively; and a third and a fourth selecting unit for respectively receiving the outputs of a first and second digital-to-analog converters and generating the respective outputs of the first and second digital-to-analog converters in response to the selecting signal to the sled motor.

Abstract: The present invention relates to an apparatus and method for reducing the frequency with which memory is accessed in graphic printing or the like. If a CPU 100 reads image data from a buffer block where data has not been written, a memory controller 12 does not read the image data from a image buffer 140, but sends back initializing data stored beforehand. If image data is going to be written for the first time in a buffer block, the memory controller 12 stores and manages this image data, first writes the initializing data in this buffer block, and thereafter writes the image data. If a read request or a write request occurs to a buffer block where data has already been written, the memory controller 12 reads or writes data as requested.

Abstract: There is provided an entertainment unit for a vehicle. The unit includes an assembly housing adapted to mount against an interior surface of the vehicle. A bus is adapted to couple at least one of video and audio signals from each of a plurality of input devices. At least one display device, houseable in the assembly and operatively coupled to the bus, is adapted to reproduce the video signals. At least one wireless transmitter operatively coupled to the bus, is adapted to wirelessly and simultaneously transmit a plurality of audio programs to a plurality of wireless headphone sets. The at least one wireless transmitter includes at least one multiplexor adapted to select a specific input device whose audio output is to be wirelessly transmitted to a given one of the plurality of wireless headphone sets.

Abstract: A cutting apparatus of blade's raw material used in a paper blanking die for manufacturing paper box and the like and an automatic cutting system using this cutting apparatus. This cutting apparatus comprises: cutters more than two kinds having different cutting out or cutting off patterns arranged side by side laterally against a feeding direction of the blade's raw material; a cutter guiding section for guiding said each cutter so as to be able to perpendicularly move against a plane of said blade's raw material; a pressing means for perpendicularly moving and pressing any one of the cutters toward a plane of said blade's raw material; a cutter die for supporting said blade's raw material against the pressing force of said cutter and simultaneously interacting with said cutter whereby executing the cutting work of the blade's raw material; and a cutter selecting means for selecting such that only any one of said cutters is pressed by said pressing means.

Abstract: There is provided a method for fetching at least one of instructions and operand data from a second memory into a first memory of a computer system having at least one processor. The method includes the step of storing a plurality of entries in a table associated with the first memory. Each entry is associated with a memory page that includes a plurality of storage elements in the second memory, and includes information of prior access by the at least one processor to each of the plurality of storage elements. Upon a miss to the first memory from the at least one processor based upon a request, the table is searched for a given entry associated with a given page that includes a target of the request. If the given entry is found, then at least one prefetch request is generated to fetch at least one storage element included in the given page from the second memory to the first memory, based upon given information comprised in the given entry.

Abstract: A method and apparatus for correcting a gaze of an image using a single camera, corrects an image so that a communication familiarity can be enhanced by letting the eyes meet in a video communications system such as a video phone or video conference with a single camera. The input image from the camera is analyzed to determine a gaze deviation value formed between the viewing direction toward the camera and the object viewing direction. In order to obtain a gaze corrected image with respect to the image captured by the camera, a corresponding point coordinate of the input image corresponding to a particular coordinate value of the corrected image is calculated and then a pixel value of the corrected image corresponding to the calculated coordinate is obtained using the input image from the camera. Thus, the eyes can be met with the other party with a single camera, to thereby enhance familiarity of the video communication.

Abstract: A photocathode structure having a photoelectric face plate protective layer, in order to prevent a photoelectric effect from being deteriorated sharply due to a high reaction of oxygen with respect to most of existing photoelectric face plate materials when the photoelectric face plate used for generating photoelectrons by a photoelectric effect is exposed to the atmosphere, is provided. For example, a diamond-like carbon thin layer is used as a photocathode protective layer, to thereby perform a function of protection of the photoelectric face plate through isolation of the photoelectric face plate from the atmosphere and enable electrons generated from the photoelectric face plate to pass through a diamond-like carbon thin layer, which is deposited thinly, by the tunneling effect so that the performance of the photocathode is not affected.

Abstract: Methods and apparatus for performing read and write operations in a semiconductor memory device comprising an I/O (input/output) architecture comprising a separate data input bus and data output bus. Read and write operations are sequentially performed in a same cycle using QDR2 (Quadruple Data Rate 2) wherein each of the input and output modes operate at a 2-bit burst mode and a double data rate (DDR) mode, thereby minimizing cycle time or read and write operations are sequentially performed in a same cycle using QDR4 (Quadruple Data Rate 4), wherein each of the input and output modes operate at a 4-bit burst mode and a DDR mode, thereby minimizing the cycle time. In another aspect, when a read command is input in one cycle, a read operation is performed in synchronization with a rising edge of clock and a write operation is performed in synchronization with a signal that operates during the read operation.

Abstract: A system and method for automatically detecting anatomical landmarks in a radiographic image, preferably for total hip replacement applications, in accordance with the present invention, provides a region of interest of the image, and determines a first landmark in the region of interest by computing an intensity ridge map. A second landmark is determined in the region of interest based on a position and orientation of the first landmark, and measurements are performed on the image based on positions of the first and second landmarks.

Abstract: A method for fabricating DRAM and flash memory cells on a single chip includes providing a silicon substrate, forming a trench capacitor for each of the DRAM cells in the silicon substrate, forming isolation regions in the silicon substrate which are electrically isolated from each other, forming first type wells for DRAM and flash memory cells at first predetermined regions of the silicon substrate by implanting a first type impurity in the first predetermined regions, forming second type wells for DRAM and flash memory cells at second predetermined regions in the first type wells by implanting a second type impurity in the second predetermined regions, forming oxide layers for DRAM and flash memory cells on the second type wells, forming gate electrodes for DRAM and flash memory cells on the oxide layers for DRAM and flash memory cells, and forming source and drain regions for DRAM and flash memory cells in the respective second type wells for DRAM and flash memory cells, in which the source and drain regio

Abstract: A system for automatically generating a style sheet includes a parser for generating a document type graph in accordance with an input structure, a graphical user interface tool for interactively mapping the document type graph to form a display template in accordance with user requirements and a script generator for generating and storing the style sheet in accordance with the graphical user interface and the design template.

Abstract: A method for preparing an alignment layer surface provides a surface on the alignment layer. The surface is bombarded with ions, and reactive gas is introduced to the ion beam to saturate dangling bonds on the surface. Another method for preparing an alignment layer surface provides a surface on the alignment layer. The surface is bombarded with ions and quenched with a reactive component to saturate dangling bonds on the surface.

Abstract: A system and method for processing operations that use data vectors each comprising a plurality of data elements, in accordance with the present invention, includes a vector data file comprising a plurality of storage elements for storing data elements of the data vectors. A pointer array is coupled by a bus to the vector data file. The pointer array includes a plurality of entries wherein each entry identifies at least one storage element in the vector data file. The at least one storage element stores at least one data element of the data vectors, wherein for at least one particular entry in the pointer array, the at least one storage element identified by the particular entry has an arbitrary starting address in the vector data file.

Abstract: A method for managing document information on an information net, such as the World Wide Web (WWW), comprises the steps of inputting a structured document; extracting selected document properties from the structured document; forming a feature vector representative of the properties; and forming a caricature derived from the feature vector.

Abstract: A bit line sense amplifier is provided. The bit line sense amplifier includes a first sense amplifier block in which a plurality of first sense amplifiers for sensing and amplifying data of a bit line or a complementary bit line are laid out, and first drivers, which are arranged outside the plurality of first sense amplifiers, for pulling down the bit line or the complementary bit line to a first voltage level. The bit line sense amplifier further includes a second sense amplifier block with a plurality of second sense amplifiers and second drivers for pulling up the bit line or the complementary bit line to a second voltage level. By arranging the drivers outside the bit sense amplifiers, effects caused by variation in critical dimensions (CDs) of gates are minimized and the entire area of the bit line sense amplifier is reduced.

Abstract: A semiconductor device is formed by including the step of forming a polycrystalline silicon layer on a semiconductor substrate which includes a pad oxide. A trench is formed in the semiconductor substrate by etching sequentially a part of the polycrystalline silicon layer, a part of the pad oxide layer, and a part of the semiconductor substrate. An oxide layer spacer is formed on the walls of the trench and the side walls of the etched pad oxide layer and the etched polycrystalline silicon layer. A nitride liner is formed on the oxide layer spacer. The trench is filled with an insulating layer on the nitride liner and the insulating layer is planarized until the polycrystalline silicon layer is exposed. And then the polycrystalline silicon layer is dry-etched.