Abstract: The invention is a unique high speed Programmable Logic Device ("PLD") AND array with separate nonvolatile memory. The invention utilizes a separate nonvolatile memory to isolate the effect of nonvolatile transistors from the proper operation of the PLD AND array. The invention also results in a substantial increase in the amount of current flowing through transistors charging and discharging the PLD AND array bit lines. This in turn significantly increases the speed of the invention's PLD AND array. Moreover, the invention makes the current charging or discharging the PLD AND array bit lines more predictable. These advantages of the present invention are achieved by a nonvolatile memory that is separate from the AND array itself and also by utilizing NMOS transistors in the AND array instead of using the prior art nonvolatile transistors such as EEPROM transistors in the AND array.