Abstract: A semiconductor light-emitting diode, and method of fabricating same, wherein an indium (In)-containing light-emitting layer, as well as subsequent device layers, is deposited on a textured surface. The resulting device is a phosphor-free white light source.

Abstract: A method, apparatus, and computer readable storage medium provides the ability to stabilize a series of two or more still images (i.e., a clip). The clip of image data is obtained. The clip is then analyzed to produce a set of source curves that represent a global movement detected in the clip. Each of the source curves is filtered to compute result curves. The source and result curves are then exposed and displayed to the user who may modify/tweak the curves as desired. Automatically, without additional user input, and without reanalyzing the original clip, the result curves are recomputed based on the user's changes. The original clip is then transformed into a result clip/series based on the source and result curves.

Abstract: An image editing system for use with a web-based video editing system is provided. The image editing system comprises: a detection system configured to receive image data; detect regions of the image representing faces; store the data representing the coordinates of the faces as points of interest; and receive user input adding additional points of interest, modifying the points of interest, or deleting the pre-selected points of interest; and a cropping subsystem configured to determine the portion of the image containing the maximum number of points of interest that will fit within the crop area; and crop the image.

Abstract: The invention disclosed herein relates to methods and materials for producing simvastatin and related compounds such as huvastatin.

Abstract: A method for fabricating AlxGa1-xN-cladding-free nonpolar III-nitride based laser diodes or light emitting diodes. Due to the absence of polarization fields in the nonpolar crystal planes, these nonpolar devices have thick quantum wells that function as an optical waveguide to effectively confine the optical mode to the active region and eliminate the need for Al-containing waveguide cladding layers.

Abstract: A method of fabricating an optoelectronic device, comprising growing an active layer of the device on an oblique surface of a suitable material, wherein the oblique surface comprises a facetted surface. The present invention also discloses a method of fabricating the facetted surfaces. One fabrication process comprises growing an epitaxial layer on a suitable material, etching the epitaxial layer through a mask to form the facets having a specific crystal orientation, and depositing one or more active layers on the facets. Another method comprises growing a layer of material using a lateral overgrowth technique to produce a facetted surface, and depositing one or more active layers on the facetted surfaces. The facetted surfaces are typically semipolar planes.

Abstract: A method, apparatus, and article of manufacture for processing data. The method, apparatus and article of manufacture preferably comprise the steps of: (a) receiving a record having a plurality of identifiers into a computer system, the record corresponding to an entity; (b) encrypting one or more of the identifiers in the record to form an encrypted record; (c) applying one or more encrypted variants to the encrypted record based on the encrypted identifiers and pre-computed encrypted synonyms; and (d) comparing the encrypted record to previously stored data using the encrypted identifiers and the encrypted variants in order to the match or associate the encrypted record with the previously stored data.

Abstract: A similarity measure system selects a first value and a first context related to the first value, divides the first value into a first set of substrings in an order preserving way, and processes each of these substrings through an obfuscation function to produce a first set of obfuscated substrings. The system selects a second value and a second context related to the second value, and processes the second value to produce a second set of obfuscated substrings. The system calculates a context similarity measure for the first context and the second context. The system determines a value similarity measure from the first and second set of order preserved obfuscated substrings. The system determines a closeness degree between the first value and the second value and a closeness degree based on the context similarity measure.

Abstract: A non-volatile logic gate, including a magnetic material having a shape induced magnetic anisotropy, wherein a shape of the magnetic material has a first vertex, a second vertex, and a third vertex and supports a single magnetic domain; regions of the magnetic material including a first input region adjacent the first vertex, a second input region adjacent the second vertex, and an output region adjacent a third vertex; the first input region for receiving a first logic input to the logic gate, the second input region for receiving a second logic input to the logic gate, and the output region for outputting at least one logic output of the logic gate; and the shape induced magnetic anisotropy determining at least part of a truth table for the logic gate, so that the logic gate produces the at least one logic output from the logic inputs using the shape.

Abstract: The invention provides methods and materials for observing protein fragments generated during apoptosis in order to observe this process in mammalian cells. Embodiments of the invention can be used for example to observe apoptosis in order to examine the sensitivity of a mammalian cancer cell to apoptosis inducing agents.

Abstract: Methods for the heteroepitaxial growth of smooth, high quality films of N-face GaN film grown by MOCVD are disclosed. Use of a misoriented substrate and possibly nitridizing the substrate allow for the growth of smooth N-face GaN and other Group III nitride films as disclosed herein. The present invention also avoids the typical large (?m sized) hexagonal features which make N-face GaN material unacceptable for device applications. The present invention allows for the growth of smooth, high quality films which makes the development of N-face devices possible.

Abstract: A method, apparatus, and article of manufacture is configured to define a structured view of data in a computer system. A relational database management system (RDBMS) stores information in the computer system. As part of a process and framework, a series of business rules and process workflows that manage data (that is hierarchical in nature) that resides in one or more RDBMS tables are maintained. User input is accepted that defines a hierarchical structure that is projected onto the data. The hierarchical structure is stored as metadata in the RDBMS. The hierarchical structure is utilized to graphically visualize, manage, and manipulate the data.

Abstract: A method of controlled p-type conductivity in (Al,In,Ga,B)N semiconductor crystals. Examples include {10 11} GaN films deposited on {100} MgAl2O4 spinel substrate miscut in the <011> direction. Mg atoms may be intentionally incorporated in the growing semipolar nitride thin film to introduce available electronic states in the band structure of the semiconductor crystal, resulting in p-type conductivity. Other impurity atoms, such as Zn or C, which result in a similar introduction of suitable electronic states, may also be used.

Abstract: A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11 20) a-plane GaN layers are grown on an r-plane (1 102) sapphire substrate using MOCVD. These non-polar (11 20) a-plane GaN layers comprise templates for producing non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices.

Abstract: A nitride light emitting diode, on a patterned substrate, comprising a nitride interlayer having at least two periods of alternating layers of InxGa1?xN and InyGa1?yN where 0<x<1 and 0?y<1, and a nitride based active region having at least one quantum well structure on the nitride interlayer.

Abstract: A method of device growth and p-contact processing that produces improved performance for non-polar III-nitride light emitting diodes and laser diodes. Key components using a low defect density substrate or template, thick quantum wells, a low temperature p-type III-nitride growth technique, and a transparent conducting oxide for the electrodes.

Abstract: In one embodiment, a method is provided for receiving a song claim, and comparing the song claim to records of a database of songs. To this end, results of the comparing may be indicated. In various embodiments, such songs may include musical works, compositions, etc. Of course, songs in the form of a recording are also contemplated.

Abstract: The disclosed invention comprises methods and materials for screening cells for genetic profiles associated with autism spectrum disorders. The methods typically involve isolating a cell from an individual and then observing the expression profile of one or more genes in the cell, wherein certain expression patterns of the genes observed are associated with autism spectrum disorders.

Abstract: A Ce3+ based aluminate phosphor or Ce3+ based phosphor in a solid solution can be used for white light generation when combined with a blue or ultraviolet light emitting diode.

Abstract: An apparatus and method for delivering liquid within an orifice of an animal is disclosed. In an exemplary embodiment, the apparatus comprises a hollow syringe defining a vessel having an open end; a plunger, slidingly and sealingly disposed within the vessel; and a flexible delivery tube, having a first end sealingly coupled to the open end and a delivery end for dispensing the liquid proximate the orifice. A light source directing light to the delivery end of the flexible tube may also be included.