Abstract: The polishing composition of this invention is useful for chemical-mechanical polishing of substrates containing noble metals such as platinum and comprises up to about 50% by weight of a adjuvant wherein said adjuvant is s elected from a group consisting of a metal-anion compound, a metal-cation compound or mixtures thereof; abrasive particles at about 0.5% to about 55% by weight of the polishing composition; and water-soluble organic additives up to about 10% by weight of the polishing composition. The abrasive particles are selected from the group consisting of alumina, ceria, silica, diamond, germania, zirconia, silicon carbide, boron nitride, boron carbide or mixtures thereof. The organic additives generally improve dispersion of the abrasive particles and also enhance metal removal rates and selectivity for metal removal by stabilizing the pH of the polishing composition and suppressing the dielectric removal rate.

Abstract: A polishing pad used in a method for polishing a semiconductor device is made by combining a polymeric matrix and a dissolvable substance that dissolves upon contact with a polishing slurry.

Abstract: A polishing pad includes a polishing layer, and the transparent window portion of the polishing layer having dispersed particles to increase the rate at which the window portion wears away during a polishing operation, and to avoid forming a lump in the polishing layer.

Abstract: A polishing pad installation tool comprised of a base portion and at least one compressible layer in operative connection with the base portion. The compressible layer includes a plurality of apertures through an upper surface of the compressible layer. The tool further includes a plurality of parallel pins extending outwardly from the base portion through the apertures of the compressible layer. Each of the pins includes a collar portion in surrounding relation about each pin. When the compressible layer is in an uncompressed condition, the collar portions are beneath the upper surface of the compressible layer. The pins are positioned on the base portion in a pattern which corresponds to the holes in the polishing platen. The pins have diameters which are smaller than the diameters of the holes in a polishing pad. The collars have diameters larger than the diameters of the holes in the polishing pad.

Abstract: A conditioning apparatus and method for conditioning a polish pad. The conditioning apparatus has a movable conditioning arm with a disk mounting apparatus, a plurality of interchangeable conditioning disks, a disk housing or multiple disk stations capable of holding the plurality of interchangeable conditioning disks and a controller for directing and controlling the movement of said conditioning arm.

Abstract: A method of fabricating a polishing pad in which a pad material includes a polishing layer overlying a substantially optically transparent backing layer is subjected to a process in which an optical window is formed in the pad material by removing a portion of the polishing layer and exposing an underlying portion of the substantially optically transparent backing layer. Prior to forming the optical window, the polishing layer is bonded to the backing layer to form a sealed interface, then a portion of the polishing layer is mechanically cut away from the backing layers. Since the backing layer is not pierced during the removal process, a liquid, such as an aqueous polishing slurry, cannot leak through the optical window and on to underlying portions of a polishing apparatus to which the pad material is mounted.

Abstract: A polishing pad includes a polishing layer and an adhesive layer. An adhesive bottom surface of the adhesive layer has an air transmitting pathway to collect air that is expelled from under the adhesive bottom surface, which avoids entrapment of air under the adhesive bottom surface.

Abstract: A polishing composition for polishing a semiconductor wafer includes comprises water, an abrasive that is preferably colloidal silica, water-soluble cellulose having a molecular weight of at least about 1,000,000 and an alkaline compound that is preferably ammonia. Tetra methyl ammonium hydroxide may also be added to the polishing composition.

Abstract: This invention relates to polishing pads and a method for making the polishing pad surface readily machineable thereby facilitating permanent alteration of the polishing pad surface to create an advantageous micro-texture. The advantageous micro-texture is statistically uniform and provides a polishing pad with improved break-in preconditioning time. Polishing pads of this invention find application to the polishing/planarization of substrates such as glass, dielectric/metal composites and substrates containing copper, silicon, silicon dioxide, platinum, and tungsten typically encountered in integrated circuit fabrication.

Abstract: A polishing composition for polishing a semiconductor substrate has a pH of under 5.0 and comprises (a) a carboxylic acid polymer comprising polymerized unsaturated carboxylic acid monomers having a number average molecular weight of about 20,000 to 1,500,000 or blends of high and low number average molecular weight polymers of polymerized unsaturated carboxylic acid monomers, (b) 1 to 15% by weight of an oxidizing agent, (c) up to 3.0% by weight of abrasive particles, (d) 50-5,000 ppm (parts per million) of an inhibitor, (e) up to 3.0% by weight of a complexing agent, such as, malic acid, and (f) 0.1 to 5.0% by weight of a surfactant.

Abstract: According to the invention, an aqueous polishing composition comprises, abrasive particles and water of basic pH to remove a barrier layer by CMP using a polishing pad, the aqueous polishing composition further comprising, solely polar molecules each having multiple, polar bonding sites forming respective hydrogen bonds with silanol bonding groups on a hydrated silica dielectric layer of a semiconductor substrate, which form an hydrophilic protective film of the polar molecules that minimizes erosion.

Abstract: A semiconductor wafer adapted for planarization by polishing the wafer with a polishing pad and a polishing fluid, the wafer having a metal layer, and a resistant film formed selectively on low topography features of the metal layer to resist the polishing fluid while high topography features of the metal layer are removed by said polishing, which minimizes a time duration for attaining planarization of the wafer by said polishing.

Abstract: An aqueous polishing composition having abrasive particles of a metal oxide has a pH that undergoes pH drift, because ions are provided by dissolution of the metal oxide, and the pH drift is minimized by providing the aqueous polishing composition with an equilibrium concentration of the ions at said pH.

Abstract: The invention is directed to a base-pad for placement under a polishing pad for use with a polishing fluid during a polishing operation, the base-pad having a layer with vertical elongated pores that absorb polishing fluid and that confine absorbed polishing fluid from transport laterally in the base-pad. Micropores in the layer are impermeable to the polishing fluid and permeable to gasses.

Abstract: A composition is provided in the present invention for polishing a composite semiconductor structure containing a metal layer (such as tungsten, aluminum, or copper), a barrier layer (such as tantalum, tantalum nitride, titanium, or titanium nitride), and an insulating layer (such as SiO2). The composition comprises an aqueous medium, an oxidant, an organic polymer that attenuates removal of the oxide film. The composition may optionally comprise a complexing agent and/or a dispersant.

Abstract: A method of polishing a semiconductor substrate by adjusting the polishing composition with a BTA concentration that raises the metal removal rate when polishing at a relatively high polishing pressure, and that minimizes the metal removal rate when polishing metal in trough at a lower polishing pressure; and adjusting the polishing pressure on metal in each trough to a level that removes metal from trough at a minimized removal rate, while simultaneously polishing the excess metal with a higher polishing pressure.

Abstract: A method of polishing a wafer in a carrier by a polishing pad, controlling a ratio of platen speed to carrier speed (PS to CS) within a specific range, or controlling a first polishing step with a PS to CS ratio in the range of about 150:1 to about 1:150 followed by a second polishing step with a platen speed of about 0 to 20 rpm while maintaining the carrier speed used in the first polishing step, which maximizes clearing of residual material removed from a patterned wafer surface by polishing.

Abstract: A polishing pad assembly is provided that is useful for the chemical mechanical polishing of glass and electrical devices such as semiconductor wafers that comprises a polish pad and a semi-rigid base material firmly adhered to the polishing pad for positioning on a polishing platen of a polishing machine; wherein the semi-rigid base material has a modulus of rigidity of 0.01-50 GPa (GigaPascals) determined according to ASTM D 790, a thickness of 0.25-15.0 mm, and a grooved surface having a pitch of 5-100 mm and the grooves have a width of 0.025-2.5 mm and a depth of 0.1-2.5 mm.

Abstract: A polishing compound containing cocoon-shaped silica particles and crystal silica particles, and water-soluble polymers including; at least one type selected from the groups including ammonium nitrate and ammonium acetate, and at least one type selected from methylcellulose, carboxymethylcellulose, hydroxyethylcellulose, and the group including carboxymethylcellulose.

Abstract: An aqueous polishing composition for chemical mechanical polishing of semiconductor devices of silica and circuits of aluminum, titanium or titanium nitride; wherein said aqueous composition includes, an oxidizing agent, an inhibitor of a polyalkyleneimine, and a pH buffer, and a method for polishing a semiconductor device by applying the polishing composition at an interface between a polishing pad and the semiconductor device.