Abstract: A semiconductor integrated circuit device includes circuit elements having relatively different performance characteristics in which buried regions having different chemical elements are used to autodope an epitaxial layer to different degrees.

Abstract: First, second and third set-reset flip-flops (FFs), reset to an initial stable state, are interconnected such that the second FF can change state only after the first FF has changed state and the third FF can change state only after the second FF has changed state. Outputs of the first and second FFs are combined to enable the production of a first output pulse and outputs of the second and third FFs are combined to enable the production of a second output pulse consecutive to, and non-overlapping with, the first output pulse.

Abstract: A semiconductor device includes a body of semiconductor material on which are formed a plurality of spaced semiconductor elements. Each of the semiconductor elements includes a plurality of contacts, some of which are separated from each other by recesses in the semiconductor body. A metal grid is on the semiconductor body and surrounds each of the semiconductor elements. At least one of the contacts of each element extends to and is connected to the grid. The grid serves to electrically connect the contacts of all the semiconductor elements to permit the electrical plating of the contacts. Those contacts of each semiconductor element which are not directly connected to the grid are electrically connected thereto through the semiconductor body and an adjacent contact which is directly connected to the grid.

Abstract: A method of optically testing the lateral dimensions of a pattern of material disposed on a substrate comprises applying the material to both the main area of the substrate and a test area on the same substrate, and selectively removing the material from both areas on the substrate simultaneously to form respectively the pattern on the main area and a diffraction grating on the test area. The diffraction grating is exposed to a beam of light, and the intensity of two of the diffracted beams is measured to obtain a ratio signal (I.sub.2 /I.sub.1), which is then utilized to determine the lateral dimensional tolerance of the integrated circuit pattern.

Abstract: Photo sensitive elements formed on a surface of a substrate are arranged in rows and columns. Column conductors for selectively collecting the information contained in the photo elements are diffused along the length of each column in the same surface of the substrate as the photo elements. A barrier region is formed between the photo elements of each column and their associated column conductor for, normally, preventing leakage of charge from the diffused column conductors back into the photo elements. Row conductors, insulated from the surface of the substrate, are disposed transversely to the columns and lie over the rows of photo elements. Driving voltages applied to a row conductor either place the photo elements of that row in a signal collecting mode or else enable the collected signals in the elements of that row to surmount the barrier and flow into their corresponding column conductors.

Abstract: The basewidth of a lateral, bipolar transistor is markedly reduced by first forming a layer of polycrystalline silicon over an oxide coated substrate. By utilizing a process for doping the exposed edges of the patterned polysilicon layer, a narrower basewidth dimension is achieved than heretofore possible with photolithographic techniques.

Abstract: An integrated injection logic (I.sup.2 L) device includes at least two gate structures. Each gate structure includes a first region of one type conductivity with an injector region and a base region of the opposite type conductivity disposed therein adjacent a surface thereof. A second region of the opposite type conductivity is disposed in each gate structure adjacent the surface of the first region between the injector and base region. The second regions are electrically-floating regions free of any contact electrode.

Abstract: Uniform aluminum diffusion into monocrystalline silicon is obtained by forming a polycrystalline silicon underlayer on the surface of a monocrystalline silicon body, depositing a layer of aluminum on the polycrystalline silicon underlayer by evaporation at a temperature of less than about 250.degree. C., depositing a silicon overlayer over said aluminum layer at a temperature less than about 250.degree. C. and raising the temperature of said structure to between 900.degree. C. and 1300.degree. C. to cause the aluminum to diffuse into said monocrystalline silicon.

Abstract: Charge-coupled device (CCD) including a plurality of parallel CCD channels and common electrodes extending over these channels for controlling the flow of charge in the channels. Potential barrier regions are located beneath certain of the electrodes in certain of the channels, each pair of barrier regions separated by a normal channel region, and voltages are applied to the electrodes at levels such that charge in a channel containing the barrier regions is trapped and temporarily delayed in the normal channel region between the barrier regions relative to the propagation of charge in a channel not containing barrier regions. The structure is useful, for example, in tree networks for parallel-to-serial signal translation and vice versa.

Abstract: A silicon-on-sapphire structure and method for forming the same is described wherein the leakage current attributable to "back channel" leakage is minimized by forming the channel region in such a manner as to have provided therein at least two levels of dopant concentration. The heavier level of dopant concentration is positioned adjacent the silicon/sapphire interface while the lighter level of dopant concentration occupies the remainder of the channel region and is shallower than the heavier level. The classic inversion process takes place in the lightly doped section at the shallow level.

Abstract: A method of making a monolithic semiconductor-on-insulator device which includes silicon islands in spaced relation on the surface of an insulating substrate includes the steps of filling the spaces between the islands with a passivating material by first depositing a layer of a semi-insulating material on the surface of the substrate and extending between adjacent islands into contiguous relation with the side surfaces thereof and then depositing a layer of insulating material on the layer of semi-insulating material. The combined thicknesses of the layers of semi-insulating and insulating material is substantially the same as the thickness of the silicon islands so that the resulting device has a substantially planar surface.

Abstract: An MNOS device is described wherein a body of semiconductor material is provided with source and drain regions and an interstitial portion, representing the channel region, therebetween. The channel region has an area, precisely aligned with the gate, that has been implanted with additional conductivity modifiers of the same conductivity type as the remaining portions of the channel region.

Abstract: A method of reducing the resistivity of a doped polycrystalline silicon film deposited on a substrate comprises the step of irradiating the film with a laser pulse having an energy density of less than about 1.5 joules per square centimeter.

Abstract: A reflectarray antenna includes a primary feed that radiates a primary wave to a plurality of radiators where the wave is absorbed. A portion of the absorbed wave is resolved into first and second mutually orthogonal components at first and second feed ports, respectively, of a radiator. The first component is transmitted with a designated phase shift via a transmission phase shifter to the second feed port. Correspondingly, the second component is transmitted with the designated phase shift via the phase shifter to the first feed port. After the components are transmitted to the feed ports, they are re-radiated by the radiator in polarization states orthogonal to the ones in which they were absorbed.

Abstract: A method of chemically vapor-depositing a low-stress glass layer onto a substrate which is heated in an atmosphere including silane, oxygen, and an inert carrier gas, comprises the step of adding water vapor to the atmosphere to increase the water vapor content of the atmosphere substantially above that normally present therein from the oxidation of the silane.

Abstract: A field effect transistor having a gate on the bottom of a groove in a body of semiconductor material with the source and drain being on a surface at opposite sides of the groove is made by first forming a recess in the surface of the semiconductor body. A metal layer is then coated on the surface of the semiconductor body and on the surfaces of the recess. A layer of a photoresist is then coated over the metal layer. The photoresist is then exposed to a beam of light whose rays extend along a path which is at a very small angle with respect to the surface of the semiconductor body to fully expose a narrow portion of the photoresist layer at one edge of the recess. The fully exposed portion of the photoresist layer is removed to expose a narrow area of the metal layer along the edge of the recess. The exposed portion of the metal layer is then removed and a groove is formed in the portion of the surface of the semiconductor material exposed by removing a portion of the material layer.

Abstract: A body including P type indium phosphide has an ohmic contact thereon of an alloy of by weight 81% to 86% gold (Au), 11% to 14% germanium (Ge) and 2% to 5% zinc (Zn). This contact has a low resistance and good adhesion to the indium phosphide body.

Abstract: An injection laser diode is at one end of an optical fiber to direct modulated optical radiation into the fiber. At the other end of the fiber is a detector, such as a semiconductor photodetector, for the modulated radiation. Between the other end of the optical fiber and the detector is a reflecting shutter which is adapted to periodically reflect some of the radiation, at a lower frequency rate, back along the optical fiber to the injection laser. The radiation reflected back into the injection laser causes a variation in the characteristics of the laser so that the laser operates as a detector for the reflected radiation.

Abstract: A "fill and spill" charge coupled device (CCD) input circuit in which the source electrode is clamped to a voltage level (V.sub.T +.DELTA.V) lower than that of the input gate electrode during the fill operation, where (V.sub.T +.DELTA.V) is the gate-to-source voltage of a field effect transistor during conduction. The field effect transistor and input gate electrode are integrated onto the same semiconductor substrate and therefore exhibit the same threshold voltage V.sub.T so that the difference between the surface potential at the source electrode and the surface potential beneath the input gate electrode is independent of V.sub.T.

Abstract: A "fill and spill" charge coupled device (CCD) input circuit which includes a drain region separated from the input storage region by a potential barrier. The barrier height is held at a level at least as high as that of the potential barrier beneath the first gate electrode and lower than that of the first transfer electrode to insure that carriers injected by the source electrode during the fill operation which might otherwise flow down the CCD channel pass instead to the drain region.