Abstract: A new class of high-density, vertical Fin-FET devices that exhibit low contact resistance is described. These vertical Fin-FET devices have vertical silicon “fins” (12A) that act as the transistor body. Doped source and drain regions (26A, 28A) are formed at the bottoms and tops, respectively, of the fins (12A). Gates (24A, 24B) are formed along sidewalls of the fins. Current flows vertically through the fins (12A) between the source and drain regions (26A, 28A) when an appropriate bias is applied to the gates (24A, 24B). An integrated process for forming pFET, nFET, multi-fin, single-fin, multi-gate and double-gate vertical Fin-FETs simultaneously is described.

Abstract: A method for performing a static timing analysis on a circuit that includes gates and their respective interconnects by incorporating the effect of Miller capacitance on timing. A primitive gate is selected with its respective fan-out gates, interconnects attached to the primitive gate's output and interconnects attached to the output of each respective fan-out gate are determined. Using a metric, it is determined if the Miller capacitance effect of a CMOS gate on timing of its fan-out gate and interconnect timing is significant for each fan-out gate. If yes, the gate is replaced with a nonlinear driver model. If no, the gate is replaced with a fixed or dynamic capacitance. Next, if at least one of the fan-out gates is replaced with the nonlinear driver model, the primitive gate is likewise replaced with its corresponding nonlinear model as well.

Abstract: A process for fabricating a single-sided semiconductor deep trench structure filled with polysilicon trench fill material includes the following steps. Form a thin film, silicon nitride, barrier layer over the trench fill material. Deposit a thin film of an amorphous silicon masking layer over the barrier layer. Perform an angled implant into portions of the amorphous silicon masking layer which are not in the shadow of the deep trench. Strip the undoped portions of the amorphous silicon masking layer from the deep trench. Then strip the newly exposed portions of barrier layer exposing a part of the trench fill polysilicon surface and leaving the doped, remainder of the amorphous silicon masking layer exposed. Counterdope the exposed part of the trench fill material. Oxidize exposed portions of the polysilicon trench fill material, and then strip the remainder of the masking layer.