Abstract: A flash memory device and a method to manufacture the flash memory device. The flash memory device includes a modulation-doped heterostructure formed in a semiconductor substrate, a layer of tunnel oxide, a floating gate, a layer of dielectric, a control gate and source and drain regions formed in the substrate.
Abstract: A method of reading a flash memory (EEPROM) device by applying zero to all bitlines except for the bitline to which the cell being read is attached, applying a positive voltage to the wordline to which the cell being read is attached and applying a positive voltage to the p-well in which the cell being read is formed. A positive voltage is applied to the bitline to which the cell being read is attached.