Abstract: Phase quantizer apparatus in an all digital phase locked loop to provide a two-part digital number representing the phase of the input signal (a noncontinuous pulse train) relative to the output signal of the all digital phase locked loop. The phase quantizer comprises a write counter (modulo m counter) and a phase counter (modulo n counter) which receive the noncontinuous pulse train as an input signal. The leading pulse edge in the noncontinuous pulse train increments the write counter and resets the phase counter. The write counter comprises a binary counter and a conversion circuit. The binary counter portion of the write counter was being used and is still being used in the digital communications system to provide address information to the elastic buffer to read data into predetermined storage locations in the elastic buffer.

Abstract: A ceramic is fabricated by dispersing ceramic particles in a liquid, sedimenting the dispersion to remove large particles, and then changing its pH to flocculate the dispersed particles. The size distribution of the particles in each individual floc is similar to the size distribution of particles throughout the dispersion. The supernate is removed and the flocs are cast by centrifuging them into a mold. The cast flocs are dried and sintered to form the ceramic. To provide a multiphase ceramic, particles of two or more ceramics can be mixed together and flocced prior to centrifuging.

Abstract: A method is provided for selectively doping a compound semiconductor such as GaAs in situ by molecular beam epitaxy. The surface of the GaAs is coated with a thin layer of As by exposing it to an arsenic flux within a molecular beam epitaxy chamber. Selected areas of the surface are irradiated with a laser beam or a beam of photons, electrons, or ions in order to desorb As and form a mask of As on the surface. Dopant material such as tin is then deposited over the surface and As mask. The semiconductor is then heated to desorb the As mask while leaving the dopant in the unmasked areas. An epitaxial layer of GaAs is then grown over the surface by molecular beam epitaxy.