Abstract: A data storage system is provided with a storage domain having an active zone subportion of storage space, and a command queue controller configured for short-stroking an actuator directed to the active zone. A method is provided for virtualizing a storage space to store user data in a first domain and redundant data in a second domain, partitioning each of the domains into active and inactive subportion storage zones, and executing a retrieve access command from one of the first and second domains depending on which domain's active zone contains an LBA associated with the retrieve access command.

Abstract: The present invention relates to a memory cell including a first reference layer having a first magnetization with a first magnetization direction and a second reference layer having a second magnetization with a second magnetization direction substantially perpendicular to the first magnetization direction. A storage layer is disposed between the first reference layer and second reference layer and has a third magnetization direction about 45° from the first magnetization direction and about 135° from the second magnetization direction when the memory cell is in a first data state, and a fourth magnetization direction opposite the third magnetization direction when the memory cell is in a second data state.

Abstract: A controlled insertion device is provided for securing an electronic module in a cabinet, the device comprising a strike fixable to the cabinet and a latch engageable with the strike for imparting a longitudinal insertion force on the module for making an electrical connection while simultaneously imparting a lateral retention force on the cabinet defining a preselected clearance between the module and the cabinet.

Abstract: In some embodiments, a magnetic reader comprises first and second shields extending from an air bearing surface (ABS), a magnetoresistive stack is located between the first and second shields, and a flux guide is separated from the magnetoresistive stack while connecting the first and second shields. The flux guide magnetically couples the distal end of the magnetoresistive stack to the first shield.

Abstract: A magnetic sensor assembly including first and second shields, and a sensor stack between the first and second shields. The sensor stack includes a seed layer adjacent the first shield, a cap layer adjacent the second shield, and a magnetic sensor between the seed layer and the cap layer, wherein at least one of the seed layer and the cap layer has a synthetic antiferromagnetic structure.

Abstract: Method and apparatus for flushing cached writeback data to a storage array. Sets of writeback data are accumulated in a cache memory in an array with a view toward maintaining a substantially uniform distribution of the data across different locations of the storage array. The arrayed sets of data are thereafter transferred from the cache memory to the storage array substantially at a rate at which additional sets of writeback data are provided to the cache memory by a host. Each set of writeback data preferably comprises a plurality of contiguous data blocks, and are preferably written (flushed) to the storage in conjunction with the operation of a separate access command within a selected proximity range of the data with respect to the storage array. A stripe data descriptor (SDD) is preferably maintained for each set of writeback data in the array.

Abstract: A non-limiting embodiment of a magnetic writer has at least a write element having a write element tip and a conductive structure adjacent the write element. The conductive structure has at least two conductive elements positioned substantially parallel to one another and separated by an electrically insulating material. Each of the conductive elements carries a time-varying signal to generate an oscillating magnetic field from a displacement current between the two conductive elements, with the oscillating magnetic field being proximate the write element tip and extending parallel to the air bearing surface. A frequency of the oscillating magnetic field is a function of a frequency of the time-varying signal.

Abstract: A workpiece supporting assembly, having a body member with an internal workpiece channel and a plurality of body openings communicating with the internal workpiece channel, supports a workpiece within the workpiece channel so that end portions of the workpiece extend from the body openings. The body member has a plurality of arbors, each arbor having a longitudinal axis that is coincident with a datum axis of one of the extending workpiece portions. A turning machine grips one arbor at a time and rotates the body member about the selected longitudinal axis for machining the extended workpiece portion.

Abstract: A hard disk drive includes a base member, a disk which is a data storage medium to rotate at a high speed on the base member, and a head stack assembly (HSA) having a head slider including a magnetic head to write data on the disk or to reproduce data recorded on the disc, and an ABS pattern formed on a disk facing surface of the head slider to generate a lifting force, and is rotatably mounted on the base member so that the head slider moves between inner circumferences and outer circumferences of the disk in a floating state over the disc, wherein if a center line of the ABS pattern is an ABS line and a straight line extending in a direction in which an air flow induced due to the high speed rotation of the disk enters the ABS pattern is an air flow line, a crossing angle between the ABS line and the air flow line is reduced as the head slider moves from the outer circumferences to the inner circumferences.

Abstract: A method of fabricating a magnetic head is provided. The method of fabricating the magnetic head includes forming a writing head on a writing head area, forming an insulating layer having an inclined surface, forming a reading head on the inclined surface of the insulating layer, and forming an air bearing surface by polishing the surfaces of the writing head. Forming the reading head includes forming a first shield layer, a reading sensor, and a second shield layer.

Abstract: A non-volatile memory cell and associated method of use. In accordance with some embodiments, the memory cell includes a transistor comprising source and drain regions spanned by a gate region, and a resistive sense element (RSE) connected to the drain region of the transistor. The RSE is programmed to a first resistance by flowing a first write current through the RSE and then through the drain and source regions of the transistor. The RSE is programmed to a second resistance by flowing a second write current through the drain region and then through the RSE, the second write current bypassing the source region.

Abstract: A semiconductor device for accessing non-volatile memory cell is provided. In some embodiments, the semiconductor device has a vertical stack of semiconductor layers including a source, a drain, and a well. An application of a drain-source bias voltage to the semiconductor device generates a punchthrough mechanism across the well to initiate a flow of current between the source and the drain.

Abstract: An apparatus and associated method for generating a reference voltage with dummy resistive sense element regions. A first resistance distribution is obtained for a first dummy region of resistance sense elements and a second resistance distribution is obtained for a second dummy region of resistive sense elements. A user resistive sense element from a user region is assigned to a selected resistive sense element of one of the first or second dummy regions in relation to the first and second resistance distributions.

Abstract: A non-volatile memory cell and associated method is disclosed that includes a non-ohmic selection layer. In accordance with some embodiments, a non-volatile memory cell consists of a resistive sense element (RSE) coupled to a non-ohmic selection layer. The selection layer is configured to transition from a first resistive state to a second resistive state in response to a current greater than or equal to a predetermined threshold.

Abstract: Apparatus and method for write current compensation in a non-volatile memory cell, such as but not limited to spin-torque transfer random access memory (STRAM) or resistive random access memory (RRAM). In accordance with some embodiments, a non-volatile memory cell has a resistive sense element (RSE) coupled to a switching device, the RSE having a hard programming direction and an easy programming direction opposite the hard programming direction. A voltage boosting circuit includes a capacitor which adds charge to a nominal non-zero voltage supplied by a voltage source to a node to generate a temporarily boosted voltage. The boosted voltage is applied to the switching device when the RSE is programmed in the hard programming direction.

Abstract: A method for a slider pad that allows for contact to be mitigated without plastic deformation. Various embodiments of the present disclosure are generally directed to a slider that presents a transducer and has at least one air bearing surface (ABS) feature. The ABS feature comprises a pair of sidewalls spaced a distance X apart. A pad is deposited on the ABS feature so that the pad comprises a hemispherical cross-section and has a circumferential diameter greater than X. As configured, the pad may mitigate contact between the pad and a media surface with elastic deformation.

Abstract: A method and apparatus for reading data from a non-volatile memory cell. In some embodiments, a cross-point array of non-volatile memory cells is arranged into rows and columns that are each controlled by a line driver. A read circuit is provided that is capable of reading a logical state of a predetermined memory cell by differentiating a non-integrated first reference value from a non-integrated second reference value. Further, each reference value is measured immediately after configuring the column corresponding to the predetermined memory cell to produce a first and second amount of current.

Abstract: Various embodiments of the present invention are generally directed to a method and apparatus for sensing a programmed state of a memory cell, such as a spin-torque transfer random access memory (STRAM) cell. A first read current is applied to the memory cell to generate a first voltage. A second read current is subsequently applied to the memory cell to generate a second voltage, with the second read current being proportional in magnitude to the first read current. A comparison is made between the first and second voltages to determine the programmed state of the memory cell.

Abstract: An anti-parallel diode structure and method of fabrication is presently disclosed. In some embodiments, an anti-parallel diode structure has a semiconductor region comprising a first insulator layer disposed between a first semiconductor layer and a second semiconductor layer. The semiconductor region can be bound on a first side by a first metal material and bound on a second side by a second metal material so that current below a predetermined value is prevented from passing through the semiconductor region and current above the predetermined value passes through the semiconductor region.

Abstract: An apparatus and associated method for a non-volatile memory cell, such as a multi-bit magnetic random access memory cell. In accordance with various embodiments, a first magnetic tunnel junction (MTJ) is adjacent to a second MTJ having a magnetic filter. The first MTJ is programmed to a first logical state with a first magnetic flux while the magnetic filter absorbs the first magnetic flux to prevent the second MTJ from being programmed.