Abstract: Juxtaposing, on a common p-type substrate, an array of field effect transistor memory cells each including a random access memory dynamic RAM device comprising a floating gate portion and a storage node, and each including also a non-volatile unit comprising a double electron injector structure (DEIS) adjacent the floating gate portion, but remote from the storage node, provides a simple, low current dynamic random access memory array with non-volatile restart capability in case of power interruption.The non-volatile unit in each memory cell shares the control gate and substrate in common with the dynamic RAM device and thus shares access to the floating gate but is remote from the storage node. Situated between the floating gate and the substrate is a silicon-rich DEIS stack. During normal operation, the device functions as a dynamic RAM device. When non-volatile storage is required, electrons are written into the floating gate by raising the voltage on the control gate.

Abstract: This invention provides improved non-volatile semiconductor memories which include a one device dynamic volatile memory circuit having a switching device, a storage capacitor and a non-volatile floating gate device disposed between the storage node and the switching device. The non-volatile floating gate device has a floating gate, a floating gate FET, a control gate and a voltage divider having first and second serially-connected capacitors, with the floating gate being disposed at the common point between the first and second capacitors. One of the capacitors includes a dual charge or electron injector structure and the capacitance of this capacitor has a value substantially less than that of the other capacitor.

Abstract: A method for fluxlessly joining members having relatively low melting materials is provided. The members to be joined are exposed to ion beam radiation of sufficient intensity and a time sufficient to cause cleaning of the low melting materials after cooling. The members are then placed into juxtaposition with each other and again exposed to ion beam radiation of an intensity and for a time sufficient to cause reflow of the low melting materials which upon cooling joins said members.

Abstract: A surface reaction process for controlled oxide growth is disclosed using a directed, low energy ion beam for compound or oxide formation. The technique is evaluated by fabricating Ni-oxide-Ni and Cr-oxide-Ni tunneling junctions, using directed oxygen ion beams with energies ranging from about 30 to 180 eV. In one embodiment, high ion current densities are achieved at these low energies by replacing the conventional dual grid extraction system of the ion source with a single fine mesh grid. Junction resistance decreases with increasing ion energy, and oxidation time dependence shows a characteristic saturation, both consistent with a process of simultaneous oxidation and sputter etching, as in the conventional r.f. oxidation process. In contrast with r.f. oxidized junctions, however, ion beam oxidized junctions contain less contamination by backsputtering, and the quantitative nature of ion beam techniques allows greater control over the growth process.

Abstract: Methods and resulting structures for thermally stable metal/silicon contacts are described. The resulting contacts are aluminum which is alloyed with at least one noble metal from the group of Pd and Pt wherein at least one region of the contact is further alloyed with silicon.

Abstract: The invention is directed to novel heterofulvalene geminal dithiolate compounds and their selenium and tellurium analogs having the general formula ##STR1## Wherein X is selected from S, Se and Te. R is selected from hydrogen, alkyl, aryl, or together form a ring of carbon atoms, cyano and dithiocarbonate groups and R.sup.1 is selected from alkali, alkaline earth and transition metals, alkyl, aryl, cyclic and heterocyclic groups.A novel method for preparing these compounds is also provided.

Abstract: Novel E-beam resists and process for their use are described. These resists are conducting organic charge transfer salts. Films of these materials can be deposited by solvent casting or by sublimation. The deposited film can be made to produce a positive or negative resist image depending on the E-beam energy and exposure time. Exposure of this material to an E-beam produces patterns having differential electrical, optical and solvation properties.

Abstract: Novel E-beam resists and process for their use are described. These resists are conducting organic charge transfer salts. Films of these materials can be deposited by solvent casting or by sublimation. The deposited film can be made to produce a positive or negative resist image depending on the E-beam energy and exposure time. Exposure of this material to an E-beam produces patterns having differential electrical, optical and solvation properties.

Abstract: Substituted derivatives of tetrathiafulvalene, tetraselenafulvalene and dithiadiselenafulvalene having the general formulae ##STR1## where Z is S and Y is S; Z is S and Y is Se; and Z is Se and Y is Se, and R can be CO.sub.2 H, R'R"COH, R'CHOH, COR', SCH.sub.3, SO.sub.2.sup.- Li.sup.+, SnR.sub.3 ', SiR.sub.3, --CH.sub.2 OH --CO.sub.2 R', R'CHOH, CHO, CR.sub.2 ' CR.sub.2 'OH, TTF, TSeF and DTDSeF, R' and R" can be the same or different and is selected from the group consisting of alkyls, aryls, alkaryls, ether substituted alkyls, halogen substituted alkyls and halogens, are prepared. A novel method for their preparation is also described.

Abstract: The invention is directed to polymeric materials which undergo deformation upon exposure to actinic radiation. These polymeric materials contain at least one photoionizable group attached to a polymer backbone structure. Typically, photoionizable groups can include N,N-dimethyl-p-phenylenediamine, tetrathiafulvalene, tetraselenafulvalene, ferrocene, tetrathiatetracene and leuco dyes such as leuco methyl violet. Polymer backbone structures which can be used can be chosen from polyacrylics, polyglutamate, polyvinyl amine, polyvinyl alcohol, polystyrene and the like.Films of these materials when exposed to actinic radiation display deformations with dilations of about 35% in each dimension. They are useful for forming relief images for printing, three dimensional photography, photocopy, holographic information storage, information storage and actinometry.

Abstract: Resist images are hardened so that they are flow resistant at elevated temperatures by coating the image with a layer of a porous metal or metal oxide.

Abstract: The invention is directed to polymeric materials which undergo deformation upon exposure to actinic radiation. These polymeric materials contain at least one photoionizable group attached to a polymer backbone structure. Typically, photoionizable groups can include N,N-dimethyl-p-phenylenediamine, tetrathiafulvalene, tetraselenafulvalene, ferrocene, tetrathiatetracene and leuco dyes such as leuco methyl violet. Polymer backbone structures which can be used can be chosen from polyacrylics, polyglutamate, polyvinyl amine, polyvinyl alcohol, polystyrene and the like.Films of these materials when exposed to actinic radiation display deformations with dilations of about 35% in each dimension. They are useful for forming relief images for printing, three dimensional photography, photocopy, holographic information storage, information storage and actinometry.

Abstract: The invention is directed to a novel method for detecting surface damage to polished silicon wafers. For very fine defects and scratches an oxidation step is used. The oxide is removed and the wafer is treated in an etch solution containing pyrocatechol, ethylene diamine and water. The defects are detectable by the naked eye.

Abstract: New non-volatile memory devices fabricated from graded or stepped energy band gap insulator MIM or MIS structures are described. With the graded or stepped insulator, electrons or holes can be injected from the gate electrode at low to moderate applied fields. The carriers flow under the applied field into a wide energy band gap insulator having a prescribed charge trapping layer. This layer captures and stores electrons (write operation) or holes (erase operation) with 100% efficiency.

Abstract: An improved electrolytic printing fluid is described. The printing fluid is comprised of an agent for the catalyzation of the electro-oxidation of a color forming agent therein. The fluid may include an agent which can form a clathrate complex with the color forming agent, as well as an agent which prevents discoloring of the paper when said fluid is coated on the same. The coated paper is subjected to an electrolytic printing method using non-consumable electrode.

Abstract: A printer/copier having the added capabilities of scanning information from photocopying media, for the purpose of storing it in computer memories or transmitting it over communication lines. The printer/copier has a sensing electrode which detects the charge change on a photoconductor surface as it is being scanned by a laser beam. The laser can also be used to expose the photoconductor for the purpose of printing. A deconvolution circuit is also provided to convert the detected charge to a storable or transmittable coded signal.

Abstract: There are provided quaternary etchants comprising ethylenediamine, pyrocatechol, water and a diazine as catalyst for the etching of polycrystalline or single crystal silicon over a wide temperature and etch rate range. The etchants provide residue free dissolution, and have etch rates which are essentially unchanged when exposed to oxygen. The etch rate of the etchants can be modulated by the change in concentrations of water and/or pyrocatechol.There is also provided a method for etching polycrystalline or single crystal silicon using the etchants of this invention.

Abstract: A high speed high contrast electron resist composition comprising a copolymer of polymethylmethacrylate/methacrylic acid having incorporated therein a metal selected from the group consisting of lead, barium, calcium and strontium is disclosed. The metal is present in the range of from about 0.001% to about 10% by weight of the copolymer.

Abstract: A method for controlling the etch rate of a quaternary etchant comprising ethylene diamine, water, pyrocatechol and a diazine. The etching rate is catalyzed and controlled by controlling the amount of the diazine present in the etchant. A method for the controlled etching of silicon is also disclosed.

Abstract: New non-volatile memory devices fabricated from graded or stepped energy band gap insulator MIM or MIS structures are described. With the graded or stepped insulator, electrons or holes can be injected from the gate electrode at low to moderate applied fields. The carriers flow under the applied field into a wide energy band gap insulator having a prescribed charge trapping layer. This layer captures and stores electrons (write operation) or holes (erase operation) with 100% efficiency.