Abstract: Process for the manufacture of MOS devices by providing wafer of P-semiconductor grade silicon in a deposition reactor. The wafer is heated to a temperature of approximately 950.degree. C. while subjecting the wafer to dry oxygen gas to produce between a very thin layer (50-250A) of silica (SiO.sub.2) on a surface of the wafer. While elevating the temperature of the wafer to approximately 1000.degree. C., the chamber is purged with nitrogen and then hydrogen gas. After an introduction of carbon dioxide gas into the chamber, silane (SiH.sub.4) or dichlorosilane gas is bled into the chamber. The silane reacts with the CO.sub.2 to deposit SiO.sub.2 on the previously formed thermal SiO.sub.2. The two layers of SiO.sub.2 may then be annealed to provide a highly coherent, defect-free gate oxide for MOS integrated circuits.

Abstract: A plastic encapsulated integrated circuit (IC) package is disclosed which includes a conical depression or dimple precisely located over a photo-responsive semiconductor element incorporated within said integrated circuit for performing a predetermined function. The IC is encapsulated in a clear, two-part epoxy moulding compound preferably Hysol MG-18 having a tapered small depression positioned to register with the photo element but stopping short of actually touching the semiconductor photo element.Thus, the bottom of the tapered depression consists of a transparent window of sufficient thickness to protect the semiconductor element and still provide optical coupling. The minimum diameter of the light input depression located preferably at the top of the clear plastic package is designed to receive a snug fitting light pipe of Lucite or other clear material that could be used as a fiber optic element.

Abstract: This disclosure relates to a contact lens insertion and retraction device which is especially useful for either inserting or retracting a soft contact lens, onto or from the surface of a person's eye. This device utilizes a flexible bulb member, in cooperative combination with an attached tubular-shaped member, for supplying negative (suction) or positive (exhaust) pressure on a contact lens holder portion that is attached to the open or other end of the tubular-shaped member and thereby connected to the flexible bulb member. During the operation of removing the contact lens from the eye, a negative pressure or suction is applied to the contact lens from the contact lens holder portion by squeezing the flexible bulb member. The flexible bulb member also supplies an exhaust pressure on the contact lens by means of inserting the contact lens onto the eye. The contact lens holder portion is removable for asepticizing.

Abstract: This disclosure relates to improved piezoelectric quartz crystal products preferably used in quartz crystal filter and resonator applications, and fabrication methods therefor. Various embodiments are disclosed including a substantially circular, a square, and a rectangular quartz crystal product wherein each one contains a single triangular shaped electrode located on each of the two sides thereof in an overlapping arrangement. Other embodiments disclosed include a substantially circular, a square, and a rectangular quartz crystal product wherein each one contains multiple electrodes such as two spaced apart triangular shaped electrodes located on each side of the two sides thereof in an overlapping arrangement.

Abstract: The invention described herein is essentially a single ended power amplifier circuit properly biased to avoid crossover distortion and comprising in its output stage an NPN power transistor connected between a positive voltage source and a load. The base of the NPN transistor is connected to the collector of a PNP power transistor whose emitter is also connected to the positive voltage source. The parallel NPN/PNP transistor composite arrangement is a major feature in the power amplifier circuit resulting in a reasonably low quiescent current, low distortion, inherent stability, and ease in biasing. The composite combination of the PNP/NPN output transistors are driven by a single high Beta NPN input transistor driving the base of the PNP output transistor through a diode connected PNP transistor with unity current gain. The PNP output transistor drives the base terminal of the NPN output transistor. An alternate embodiment is disclosed which utilizes two overload protective transistors.