Patents Represented by Law Firm Haves Soloway Hennessey Grossman & Hage PC
  • Method for growing p-type gallium nitride based compound semiconductors by vapor phase epitaxy
    Patent number: 5902393
    Abstract: Disclosed is a method of growing 4 gallium nitride-based crystal by vapor phase epitaxy, suitable for mass production, without the necessity of thermal processing after completion of the crystal growth. The temperature of the substrate crystal immediately after completion of the crystal growth is 700.degree. C. or higher, and cooling of the substrate crystal at 700.degree. C. or lower after completion of the crystal growth is performed in an atmosphere of a hydrogen-fee carrier gas.
    Type: Grant
    Filed: January 17, 1997
    Date of Patent: May 11, 1999
    Assignee: NEC Corporation
    Inventors: Masaaki Nido, Akira Usui, Yasunori Mochizuki