Abstract: An improved fluid distribution head for a plasma processing system characterized by a non-planar dispersion plate provided with a plurality of apertures formed therethrough, and a mechanism for flowing a process gas through the apertures of the dispersion plate. The non-planar dispersion plate is preferably provided with a concave, spherical portion having a radius of curvature of at least four feet. The mechanism for flowing the process gas through the apertures includes an enclosure defining a chamber which communicates with the dispersion plate, a gas inlet communicating with the chamber, and a source of process gas coupled to the gas inlet. The fluid distribution head preferably forms a part of a complete plasma processing system including a wafer pedestal and an R.F. generator coupled to the pedestal to form a plasma between the dispersion plate and the wafer from the process gas flowing from the dispersion plate.

Abstract: A method produces a transistor with an overlapping gate. A first gate region is placed on a substrate between two source/drain regions. The first gate region includes a polysilicon region on top of a dielectric region. Gate overlap regions are placed around the polysilicon region. The gate overlap regions extend out over the two source/drain regions. The gate overlap regions are formed of a metal-silicide layer, for example Titanium-silicide. A top portion of the metal-silicide layer is oxidized to form a silicon dioxide layer on top of the metal-silicide layer. At the time of oxidation, the metal-silicide layer is also annealed to which further helps to improves the Titanium-silicide stoichiometry.