Abstract: A method for exchanging data in a first host computer coupled to a network. The network is also coupled to a second host computer. The method includes employing a first Transmit Control Block (Tx TCB) to facilitate transmitting first data associated with a bi-directional data flow from the first host computer to the second host computer. The first data is transmitted using the TCP protocol. The first Tx TCB is associated with the first host computer and is configured for storing transmit-facilitating parameters associated with the transmitting the first data using the TCP protocol. The method also includes employing a first Receive Control Block (Rx TCB) to facilitate receiving second data associated with the bi-directional data flow. The second data is transmitted from the second host computer to the first host computer using the TCP protocol.

Abstract: In a plasma processing system, a method of determining the temperature of a substrate is disclosed. The method includes positioning the substrate on a substrate support structure, wherein the substrate support structure includes a chuck. The method further includes creating a temperature calibration curve for the substrate, the temperature calibration curve being created by measuring at least a first substrate temperature with an electromagnetic measuring device, and measuring a first chuck temperature with a physical measuring device during a first isothermal state. The method also includes employing a measurement from the electromagnetic measurement device and the temperature calibration curve to determine a temperature of the substrate during plasma processing.

Abstract: A method of approximating an ion energy distribution function (IEDF) at a substrate surface of a substrate, the substrate being processed in a plasma processing chamber. There is included providing a first voltage value, the first voltage value representing a value of a first voltage that represents a DC potential (VDC) at the substrate surface. There is also included providing a peak low frequency RF voltage value (VLFRF(PEAK)) during plasma processing, the peak low frequency RF voltage (VLFRF(PEAK)) value representing a peak value of a low frequency RF voltage (VLFRF) supplied to the plasma processing chamber.

Abstract: The invention relates to the etching of a dielectric layer in an integrated circuit (IC) structure having a patterned metal hard mask layer. The method comprises feeding a gas mixture that includes a carbon monoxide (CO) and at least one fluorocarbon gas mixture into a reactor. The gas mixture has no oxygen (O2) gas. The gas mixture is then converted into a plasma. The plasma selectively etches the dielectric layer. Typically, the dielectric layer comprises silicon.

Abstract: The present invention comprises a system and method for determining the reverse voltage and time to apply to the dechucking of a workpiece from an electrostatic chuck (ESC). The system for dechucking comprises a processing chamber operatively coupled to a microprocessor and a memory that is configured to determine the dechucking parameters for the workpiece. The method for determining dechucking parameters comprises generating a correlation between ESC resistance and dechucking parameters, performing a single experimental test on a new ESC and generating a fitting parameter, and using the correlation and the fitting parameter to determine the dechucking parameters.

Abstract: Methods and systems are provided for fast computation of reciprocal square root for floating-point numbers. A piece-wise linear approximation of the result mantissa is computed in two cycles and used as the input to an iteration sequence that converges cubically. Three iterations produce a result with accuracy sufficient for computer graphic applications. The initial estimate and input operand are scaled to minimize final adjustments to the result mantissa and final exponent adjustments required by the algorithm are performed concurrently with any adjustment required by rounding. A pipelined implementation of the algorithm produces a result with a latency of 24 and a repeat rate of 21 clock cycles.

Abstract: A computer-implemented method for encoding a handwritten stroke set, each of the handwritten stroke set being representative of a constituent stroke of an ideographic character, to obtain an encoded input sequence. The method includes ascertaining a shape of a first stroke of the handwritten stroke set and ascertaining one of a location information and a size information pertaining to the first stroke. The method further includes assigning a first code to the encoded input sequence responsive to a determination of the shape of the first stroke and a determination of the one of the location information and the size information of the first stroke. The first code is predefined to represent the shape of the first stroke and the one of the location information and the size information of the first stroke. The first code is sufficiently unique to distinguish the first code from other codes representing other permutations of shape and the one of the location information and the size information of the first stroke.

Abstract: A method for controlling a plasma etch process while etching a layer stack having a first layer disposed above an end-point generating layer is disclosed. The method includes etching through the first layer and at least partially through the end-point generating layer while monitoring an absorption rate of a light beam traversing an interior portion of the plasma processing chamber, wherein the end-point generating layer is selected from a material that produces a detectable change in the absorption rate when etched. The end-point generating layer is characterized by at least one of a first characteristic and a second characteristic. The first characteristic is an insufficient thickness to function as an etch stop layer, and the second characteristic is an insufficient selectivity to etchants employed to etch through the first layer to function as the etch stop layer. The method additionally includes generating an end-point signal upon detecting the detectable change.

Abstract: A method for facilitating transfer of data between a master block and a slave block through a bus. The method includes ascertaining a transfer size of the data. The method also includes designating a first possible transfer size in a set of possible transfer sizes a chosen transfer size, the set of possible transfer sizes including possible transfer sizes ranging from 20 to 2n, where 2n at least equals to the largest transfer size desired between the master block and the slave block, the first possible transfer size presenting the largest possible transfer size in the set of possible transfer sizes that is less than or equal to the transfer size. The method additionally includes transferring a first data portion of the data from the master block to the slave block, the first data portion having a size that is equal to the chosen transfer size.

Abstract: A method for processing a plurality of substrates in a plasma processing chamber of a plasma processing system, each of the substrate being disposed on a chuck and surrounded by an edge ring during the processing. The method includes processing a first substrate of the plurality of substrates in accordance to a given process recipe in the plasma processing chamber. The method further includes adjusting, thereafter, a capacitance value of a capacitance along a capacitive path between a plasma sheath in the plasma processing chamber and the chuck through the edge ring by a given value. The method additionally includes processing a second substrate of the plurality of substrates in accordance to the given process recipe in the plasma processing chamber after the adjusting, wherein the adjusting is performed without requiring a change in the edge ring.

Abstract: A method for modeling and verifying a set of transactions between a set of master devices and a set of slave devices that are coupled via a bus. The method includes determining a set of dependencies for the set of transactions, executing the set of transactions on the bus, and observing the set of transactions for the dependencies. If the set of transactions does not comprise the dependencies, the method additionally includes logging a status for the set of transactions.

Abstract: A symmetrical semiconductor reactor for semiconductor processing, comprising a liner, a process chamber, a valve chamber, a slot valve plate, a liner aperture plate, a rod, and an actuator. The liner has a liner aperture adapted to provide passage for a wafer and to receive the liner aperture plate. The process chamber is coupled to the liner and the valve chamber. The actuator is coupled to the slot valve plate and moves the slot valve plate from the “closed” to the “open” position and vice versa. Since the slot valve plate is coupled to the liner aperture plate by the rod, the actuator is capable of moving the slot valve plate and the liner aperture plate at the same time. However, the precise movements of the liner aperture plate are dependent on the particular rod embodiment.

Abstract: An apparatus including a stiffening structure for stiffening a portion of an axle with a first diameter. The apparatus further includes a set of elements, wherein each of the set of elements includes a semi-circular longitudinal channel of a pre-determined length, and further includes a second diameter that is substantially similar to the first diameter. The apparatus also includes an outer surface comprising a set of expanded structures, wherein each expanded structure of the set of expanded structures further includes a set recesses, wherein each of the elements can be coupled together around the axle with the set of expanded structures, and wherein the amount of deflection of the axle is substantially reduced for the pre-determined length.

Abstract: Methods for improving the stability of RF power delivery to a plasma load are disclosed. The method includes adding an RF resistor and/or a power attenuator at one of many specific locations in the RF power system to lower the impedance derivatives while keeping the matching circuit substantially in tune with the RF transmission line.

Abstract: A computer-implemented USB (Universal Serial Bus) monitoring and data displaying utility for monitoring and displaying information pertaining to a plurality of USB devices connected to a computer, the displaying being performed on a computer display screen communicably coupled to the computer, the information pertaining to the plurality of USB devices including status information pertaining to the plurality of USB devices. The USB utility includes a monitoring view implemented in a window of the computer display screen, the monitoring view including a set of condensed individual device information sections, each of the condensed individual device information sections displaying condensed information pertaining to one of the USB devices.

Abstract: An automated process control system configured for controlling a plasma processing system having a chamber, the chamber being configured for processing a substrate. The automatic process control system includes a first sensor disposed within the chamber, the first sensor being configured for making a first plurality of measurements pertaining to a first parameter associated with a structure disposed at least partially within the chamber. The performing the first plurality of measurements is performed during the processing of the substrate. The automatic process control system further includes first logic coupled to receive the first plurality of measurements from the first sensor. The first logic is configured for analyzing using SPC methodologies the first plurality of measurements during the processing.

Abstract: A cylindrical pump baffle fitted to a semiconductor processing chamber is disclosed. The pump baffle contains a screen with bores therethrough to allow process gasses from the process chamber to be exhausted from the chamber at a reduced rate. This decreases process discrepancies to the wafer due to the prejudice of gas concentration as a result of the pressure differential imposed upon the gas and thereby the wafer brought about by the rapid and relatively unimpeded exit flow of process gasses when no restrictive member is in place. The pump baffle is also machined such that it does not block the placement and removal of wafers by the platform robot arm.