Abstract: A clock signal for use in a BiCMOS device is driven over a high capacitance wire at ECL levels. Local CMOS circuits are activated using local ECL-to-CMOS translators. This configuration reduces clock signal delay and skew and provides for greater temperature independence.

Abstract: A Schottky diode is formed with a layer of intrinsic polysilicon separating a metal silicide layer from an n conductivity type active region. This structure avoids the necessity for a process step which opens a window in the intrinsic polysilicon layer and reduces the portion of surface area needed for formation of a Schottky diode, compared to previous devices. The Schottky diode can be formed as part of an overall process for forming an integrated circuit and can be positioned in parallel across the collector/base junction of a bipolar transistor to form a Schottky barrier diode-clamped transistor.

Abstract: A controller for interfacing a central processor unit (CPU) to a peripheral storage device which can be tested for proper operation independent of the peripheral storage device includes a sequencer, a buffer, a microprocessor and various error detection logic. A gate is coupled between the sequencer and the input of the peripheral storage device for enabling or disabling the transfer of data from the sequencer to the peripheral storage device and a multiplexer is coupled between the microprocessor, the output of the peripheral storage device and the sequencer for selecting inputs to the sequencer from either the microprocessor or the peripheral storage device. During a normal write operation, write signals are sent from the CPU to the sequencer through the buffer and then from the sequencer to the peripheral storage device through the gate.