Abstract: A monolithic semiconductor integrated circuit-ferroelectric device is disclosed together with the method of manufacturing same. The ferroelectric device preferably consists of a layer of stable ferroelectric potassium nitrate disposed between electrical contacts positioned on opposite surfaces of the ferroelectric layer. The ferroelectric layer has a thickness of less than 110 microns, and preferably falling within a range of from 100 Angstrom units to 25,000 Angstrom units. The process of manufacturing the monolithic structure is multi-stepped and is particularly adapted for fabricating a potassium nitrate ferroelectric memory on a semiconductor integrated circuit.

Abstract: An automatic fluid sampling and monitoring apparatus provided as a unitary structure, and capable of collecting fluid samples at selected intervals, monitoring the level of a condition of the fluid at selected intervals, and collecting and storing sampling and fluid condition data for later retrieval. Sampling operations may be controlled on the basis of time and/or levels of a fluid condition being monitored. Where the apparatus also incorporates an internal flow measuring assembly, or is connected with an external flow meter, sampling operations may also be controlled on the basis of flow rate. The apparatus includes a self-contained microprocessor for automatically controlling sampling operations, calculating fluid condition levels on the basis of signals from a sensor, and storing data relating to sample collection and the fluid condition.