Abstract: Participants in a pre-planned conference call are permitted to make reservations for ports on a conference bridge that are either guaranteed or bumpable. Guaranteed reservations are fulfilled regardless of subsequent requests for conference bridge space, while bumpable reservations are fulfilled only if subsequent requests for guaranteed conference bridge space do not require use of the same conference bridge ports.

Abstract: Ultra-miniature electrical contacts are provided with the strength and resilience necessary to give stable low resistance connection, to minute areas of a device, such as a thousand or so closely spaced surface pads of an integrated circuit. Each contact is initially formed on a substrate as a thin, narrow elongated flat body comprised of selectively deposited layers of metal. Depending on the final configuration desired for the contact, the metal of one metal layer has a coefficient of thermal expansion such as chromium (Cr), and the metal of another layer has a coefficient of thermal expansion such as copper (Cu). Each contact is permanently formed (by differential expansion of the metal layers when heated) into a three-dimensional structure and is then made “robust” by a covering of a specialized stiffening metal plating which adds substantial strength to the contact.

Abstract: The invention relates to a field effect-controllable semiconductor component of vertical or lateral design i.e. MOSFETs and IGBTs. In this case, depletion zones and complementary depletion zones of opposite conduction types are introduced in the source-drain load path, in the semiconductor body, i.e. in the inner zone in the case of vertical components and in the drift zone in the case of lateral components, the concentration of the regions doped by the first conduction type corresponding approximately to the concentration of the regions doped by the second conduction type.

Abstract: A process for producing an epitaxial layer with laterally varying doping includes the following steps: (a) applying a patterned insulator layer to a semiconductor body; (b) growing a first epitaxial layer on the semiconductor body and the patterned insulator layer so that monocrystalline regions are formed over the semiconductor body and polycrystalline regions are formed over the patterned insulator layer, the angle of inclination (&agr;) of the interface between the monocrystalline regions and the polycrystalline regions depending on the grain size of the polycrystalline regions; (c) removing the polycrystalline regions and the insulator layer, and (d) growing a second epitaxial layer which, together with the monocrystalline regions of the first epitaxial layer, forms the epitaxial layer.

Abstract: Apparatus for dissociating cleaning gas such as NF.sub.3 for use in semiconductor manufacturing includes a housing enclosing a microwave resonator to which microwave energy is applied, a plasma tube within the housing and within which cleaning gas flows and is dissociated by the microwave energy. The plasma tube has two ends into and out of which the cleaning gas flows. A first and a second structural assembly thermally protects and seals each end of the plasma tube against atmospheric leaks. Each structural assembly has a metal collar and a sealing O-ring fitting tightly around a respective end of the plasma tube. Each metal collar includes a thin layer of elastomeric material of high thermal conductivity for conducting heat through the collar away from the end of the plasma tube thereby protecting the O-ring from heat damage. This permits the apparatus to operate more efficiently. A fan forces ambient air over the apparatus.

Abstract: An optical modulator receives both an optical channel signal and at least one electrical driving voltage signal, and generates an optical output channel signal which is polarization independent. The optical modulator includes at least three electrodes, and first and second lithium niobate optical waveguides interspersed between the electrodes. At least one electrode receives the driving voltage signal to provide a travelling wave therealong. The first optical waveguide receives the optical channel signal, and the second optical waveguide provides the optical output channel signal. A cross splice/delay line interconnects the second end of the first optical waveguide to the first end of the second optical waveguide with polarization maintaining optical fibers, respectively, for introducing a predetermined rotation of TE and TM modes. As a result, polarization components at the second end of the second optical waveguide experience a same amount of phase modulation.

Abstract: A polarization mode dispersion (PMD) compensator compensates for PMD in an optical signal by an automatic tracking of a principal state of polarization (PSP). A polarization controller (PC) receives a dithering optical signal including first and second principal states of polarization (PSPs) and PMD distortion received by the PMD compensator. The PC transforms the first and second PSPs into linearly polarized components, and is responsive to a feedback control signal for aligning the linearly polarized first and second PSPs to first and second polarization axes of the PBS, respectively. A polarization beam splitter (PBS) directs first polarized components of the received dithering optical signal onto a first output path, and directs second orthogonally polarized components of the received dithering optical signal onto a second output path for transmission as a PMD compensator output signal.

Abstract: An apparatus for monitoring a lubricant in a machine comprises sensors S1, S2 for producing signals representing electrostatic activity in a machine lubricant and a temperature sensor for producing a signal representative of the temperature of the lubricant. A signal processor 9 is arranged to process the signals from the sensors S1, S2 to detect an electrostatic activity precursor indicative of an impending wear event in the machine. The signal processor is arranged to operate in response to the temperature sensor to compensate for temperature related changes to the signals from the electrostatic sensors S1, S2.

Abstract: Information flow in the form of individual channels of digital data across a time division multiplex (TDM) bus is controlled when the bandwidth b.sub.c of an individual channel may not be integrally related to the bandwidth b.sub.t of individual time slots of the TDM bus. A channel is assigned to a selected number m of TDM bus time slots, where m=n and the relationship between b.sub.c and b.sub.t is given by the expression (n-1)b.sub.t <b.sub.c .mu.nb.sub.t. Sequential bytes of data from the channel are transmitted during data byte opportunities in the channel's selected time slots. A validity identification signal is generated for each data byte transfer opportunity in the selected time slots, and a predetermined binary state is transmitted substantially simultaneously with each data byte transfer opportunity. A VALID signal is transmitted, independently of the TDM bus, substantially simultaneously with each data byte transfer opportunity filled by the channel.

Abstract: A quad-port random access memory (RAM) is accessed simultaneously by a input-output (I/O) device, a digital signal processor (DSP), and a system bus with no need for any request/granted handshake. The I/O device, DSP, and system bus all constitute respectively different data transferring devices. The RAM is provided with three memory pages which are rotated logically by 120 degrees during successive time slots. The first memory page is accessed by the I/O device, the second memory page is accessed by the DSP, and the third memory page is accessed by the system bus during a first time slot. During subsequent time slots, the memory pages of the RAM are rotated logically so that data transfer is stepped through a predetermined sequence of data transferring device and memory page combinations in successive time slots so that all three data transferring devices are permitted to access the RAM at all times. The sequence continues repetitively during subsequent time slots.

Abstract: Plasma etching apparatus for use in the manufacture of integrated circuit devices utilizes a one-piece director at an input of a process chamber that includes a sleeve portion and a bell jar portion. The director directs incoming process gas in the sleeve portion radially before the gas flows past electrodes used to establish a radio frequency discharge that ionizes the process gas. The one-piece director is clamped between the cap and the sleeve portion of the process chamber to eliminate the need for screws.

Abstract: Apparatus and method are provided for enabling unimpeded, clock-to-clock communication between different classes of equipment including converting without queuing of data parallel bytes of digital data having a given number of binary bits to parallel bytes having a different (greater or smaller) number of bits.

Abstract: Apparatus provides time division multiplex (TDM) transmissions of interrupt requests between a plurality of shelves to a microprocessor mounted on one of the shelves. The shelves are interconnected with a cable wherein one lead is dedicated for the transmission of interrupt data signals to the microprocessor. Each shelf includes a plurality of ports or elements that are monitored and initiate interrupt request signals when a request for an action occurs therein for processing by the microcomputer. A separate encoder is mounted on each of the shelves for converting an interrupt request signal from an element on the same shelf into an X-bit interrupt data signal identifying that element. The bits of the X-bit interrupt data signal are serially transmitted over the one lead of the cable during a separate plurality of at least X clock cycles forming a timeslot assigned to the shelf originating the interrupt request within a frame period.

Abstract: An optical tracker system comprises an optical sensor 1 and associated signal processing circuitry 12, 24 for conditioning signals output from the sensor and rejecting signal indicative of false sensor information. A signal rejection circuit 24 comprises a guard time monostable 28 arranged to generate a guard time pulse defining a guard time when a pulse is input from the sensor 1, an output monostable 35 arranged to generate an output pulse in response to the guard time pulse, and an output suppress monostable 30 arranged to suppress the output monostable 35 when a false signal condition occurs during the guard time.

Abstract: A computer method manages risk in multiple-parameter physical systems performing interrelated activities, where at least one of such activities is risk-related in that it may have an outcome level which may fall outside of boundary limits. The method establishes a course of action (strategy) for the physical systems that facilitates preventing any outcome levels for risk-related activities from falling outside of boundary limits. The method assumes the existence of a computational multiscenario decision-making model that describes the physical systems and determines, under some set of criteria, both feasible and desirable levels of their activities. The method may assume either certainty, under which the value of each model parameter is known, or uncertainty, under which the values of one or more of model parameters are unknown.

Abstract: A plurality of M PBXs are coupled to a plurality of N nodes forming a Distributed Transit Private Branch Exchange (PBX). The plurality of N nodes are located remotely from each other and form a wide area network. Each node is coupled to predetermined ones of the other nodes via separate links so that each node is able to communicate with all other nodes. One or more D-channel Server Modules (DSMs) are located in predetermined nodes of the plurality of N nodes. Each DSM is associated with a plurality of D channels which are each coupled to a separate interface device in the same node or different node by means of a link for receiving and transmitting signaling data to one of an associated predetermined PBX of the plurality of PBXs.

Abstract: A low energy electron beam lithography system uses an 2 KeV electron beam of about three microamperes, a mask formed from a monocrystalline silicon wafer with a membrane thinned to about 0.5 micron, and spaced from an electron-beam sensitive resist-coated substrate about 50 microns and with the thickness of the resist of about 0.1 micron.

Abstract: A networking node for interconnecting a local telephone switch such as a private branch exchange (PBX) with other such switches through other nodes, with respective internodal multichannel digital transmission links interconnecting the various nodes, provides service for both data and voice messages. The networking node provides at least two levels (one of which may be zero) of compression for voice messages and permits one of those levels to be preselected for all voice messages from the switch with which the node is associated to a predetermined one or more of the other nodes in the network. A look-up table is stored in memory within the node to control the assignment of particular levels of compression to particular destinations.

Abstract: A method of Distributed Call Control is provided in a Distributed Transit Private Branch Exchange (PBX) comprising a plurality of Nodes forming a wide area network, and a plurality of D-channel Server Modules (DSMs). The DSMs are located in predetermined ones of the Nodes with each DSM coupled to at least one associated PBX via at least one D channel. The method includes the following steps. First, a listing of all Exchange Codes (ECs) handled by a DSM and each associated PBX coupled thereto is stored in a local routing table of a memory in the DSM. Second, a listing of all ECs handled by all of the other DSMs of the Distributed Transit PBX and their associated PBXs is stored in a remote routing table of the memory in each of the DSMs.

Abstract: A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor includes cooperating arrays of interdigitated susceptor and wafer support fingers which collectively remove the wafer from a robot transfer blade and position the wafer with variable, controlled, close parallel spacing between the wafer and the chamber gas inlet manifold, then return the wafer to the blade. A combined RF/gas feed-through device protects against process gas leaks and applies RF energy to the gas inlet manifold without internal breakdown or deposition of the gas. The gas inlet manifold is adapted for providing uniform gas flow over the wafer.