Abstract: An optimized memory refresh scheme controls and reduces instantaneous power consumption and power-related noise during DRAM refresh. In the optimized refresh implementation the DRAM is refreshed using a selectable overlap Column Address Select (CAS) before Row Address Select (RAS) refresh mode. A refresh interface between a host port and the memory system is over two bussed signals comprised of a Refresh Enable signal (Refresh.sub.-- Enable) and a Refresh Strobe pulse train (Refresh.sub.-- Strobe). Refresh.sub.-- Enable is issued by the host port to define a refresh operation. Refresh.sub.-- Strobe is a pulse train generated by the host port which is used as a clock for a sequential refresh sequencer. A refresh sequencer issues selectably timed column address refresh and row address refresh signals according to which the memory banks can all be selectably refreshed substantially in parallel, or with a predetermined selected level of overlap.