Abstract: Hermetic fiber optic-to-metal components and method for making hermetic fiber optic-to-metal components by assembling and fixturing elements comprising a metal shell, a glass preform, and a metal-coated fiber optic into desired relative positions and then sealing said fixtured elements preferably using a continuous heating process. The resultant hermetic fiber optic-to-metal components exhibit high hermeticity and durability despite the large differences in thermal coefficients of expansion among the various elements.

Abstract: A high resolution counter circuit measures the time interval between the occurrence of an initial and a subsequent electrical pulse to two nanoseconds resolution using an eight megahertz clock. The circuit includes a main counter for receiving electrical pulses and generating a binary word--a measure of the number of eight megahertz clock pulses occurring between the signals. A pair of first and second pulse stretchers receive the signal and generate a pair of output signals whose widths are approximately sixty-four times the time between the receipt of the signals by the respective pulse stretchers and the receipt by the respective pulse stretchers of a second subsequent clock pulse. Output signals are thereafter supplied to a pair of start and stop counters operable to generate a pair of binary output words representative of the measure of the width of the pulses to a resolution of two nanoseconds.

Abstract: A high-power broad-area semiconductor laser having a intracavity spatial phase controller is disclosed. The integrated intracavity spatial phase controller is easily formed by patterning an electrical contact metallization layer when fabricating the semiconductor laser. This spatial phase controller changes the normally broad far-field emission beam of such a laser into a single-lobed near-diffraction-limited beam at pulsed output powers of over 400 mW. Two operating modes, a thermal and a gain operating mode, exist for the phase controller, allowing for steering and switching the beam as the modes of operation are switched, and the emission beam may be scanned, for example, over a range of 1.4 degrees or switched by 8 degrees. More than one spatial phase controller may be integrated into the laser structure.

Abstract: Disclosed are a method and apparatus for (1) automatically selecting warheads or reentry vehicles from a storage area containing a plurality of types of warheads or reentry vehicles, (2) automatically selecting weapon carriers from a storage area containing at least one type of weapon carrier, (3) manipulating and aligning the selected warheads or reentry vehicles and weapon carriers, and (4) automatically coupling the warheads or reentry vehicles with the weapon carriers such that coupling of improperly selected warheads or reentry vehicles with weapon carriers is inhibited. Such inhibition enhances safety of operations and is achieved by a number of means including computer control of the process of selection and coupling and use of connectorless interfaces capable of assuring that improperly selected items will be rejected or rendered inoperable prior to coupling.

Abstract: An asymmetric response latch providing immunity to single event upset without loss of speed. The latch has cross-coupled inverters having a hardened logic state and a soft state, wherein the logic state of the first inverter can only be changed when the voltage on the coupling node of that inverter is low and the logic state of the second inverter can only be changed when the coupling of that inverter is high. One of more of the asymmetric response latches may be configured into a memory cell having complete immunity, which protects information rather than logic states.

Abstract: An improved cryptographic method utilizing exponentiation is provided which has the advantage of reducing the number of multiplications required to determine the legitimacy of a message or user. The basic method comprises the steps of selecting a key from a preapproved group of integer keys g; exponentiating the key by an integer value e, where e represents a digital signature, to generate a value g.sup.e ; transmitting the value g.sup.e to a remote facility by a communications network; receiving the value g.sup.e at the remote facility; and verifying the digital signature as originating from the legitimate user. The exponentiating step comprises the steps of initializing a plurality of memory locations with a plurality of values g.sup.xi ; computiThe United States Government has rights in this invention pursuant to Contract No. DE-AC04-76DP00789 between the Department of Energy and AT&T Company.

Abstract: An internally fault-tolerant data error detection and correction integrated circuit device (10) and a method of operating same. The device functions as a bidirectional data buffer between a 32-bit data processor and the remainder of a data processing system and provides a 32-bit datum is provided with a relatively short eight bits of data-protecting parity. The 32-bits of data by eight bits of parity is partitioned into eight 4-bit nibbles and two 4-bit nibbles, respectively. For data flowing towards the processor the data and parity nibbles are checked in parallel and in a single operation employing a dual orthogonal basis technique. The dual orthogonal basis increase the efficiency of the implementation. Any one of ten (eight data, two parity) nibbles are correctable if erroneous, or two different erroneous nibbles are detectable. For data flowing away from the processor the appropriate parity nibble values are calculated and transmitted to the system along with the data.

Abstract: Porous semiconducting material, e.g. silicon, is formed by electrochemical treatment of a specimen in hydrofluoric acid, using the specimen as anode. Before the treatment, the specimen can be masked. The porous material is then etched with a caustic solution or is oxidized, depending of the kind of structure desired, e.g. a thinned specimen, a specimen, a patterned thinned specimen, a specimen with insulated electrical conduits, and so on. Thinned silicon specimen can be subjected to tests, such as measurement of interstitial oxygen by Fourier transform infra-red spectroscopy (FTIR).

Abstract: A rolamite acceleration sensor which has a failsafe feature including a housing, a pair of rollers, a tension band wrapped in an S shaped fashion around the rollers, wherein the band has a force-generation cut out and a failsafe cut out or weak portion. The failsafe cut out or weak portion breaks when the sensor is subjected to an excessive acceleration so that the sensor fails in an open circuit (non-conducting) state permanently.

Abstract: The traveling-wave photodetector of the present invention combines an absorptive optical waveguide and an electrical transmission line, in which optical absorption in the waveguide results in a photocurrent at the electrodes of the electrical transmission line. The optical waveguide and electrical transmission line of the electrically distributed traveling-wave photodetector are designed to achieve matched velocities between the light in the optical waveguide and electrical signal generated on the transmission line. This velocity synchronization provides the traveling-wave photodetector with a large electrical bandwidth and a high quantum efficiency, because of the effective extended volume for optical absorption. The traveling-wave photodetector also provides large power dissipation, because of its large physical size.

Abstract: A ferroelectric optical image comparator has a lead lanthanum zirconate titanate thin-film device which is constructed with a semi-transparent or transparent conductive first electrode on one side of the thin film, a conductive metal second electrode on the other side of the thin film, and the second electrode is in contact with a nonconducting substrate. A photoinduced current in the device represents the dot product between a stored image and an image projected onto the first electrode. One-dimensional autocorrelations are performed by measuring this current while displacing the projected image.

Abstract: An apparatus and method for detecting antibodies specific to non-protein antigens. The apparatus is an immunological plate containing a plurality of plastic projections coated with a non-protein material. Assays utilizing the plate are capable of stabilizing the non-protein antigens with detection levels for antibodies specific to the antigens on a nanogram level. A screening assay with the apparatus allows for early detection of exposure to non-protein materials. Specifically metallic elements are detected.

Abstract: A glass composition for hermetically sealing to high thermal expansion materials such as aluminum alloys, stainless steels, copper, and copper/beryllium alloys, which includes between about 10 and about 25 mole percent Na.sub.2 O, between about 10 and about 25 mole percent K.sub.2 O, between about 5 and about 15 mole percent Al.sub.2 O.sub.3, between about 35 and about 50 mole percent P.sub.2 O.sub.5 and between about 5 and about 15 mole percent of one of PbO, BaO, and mixtures thereof. The composition, which may also include between 0 and about 5 mole percent Fe.sub.2 O.sub.3 and between 0 and about 10 mole percent B.sub.2 O.sub.3, has a thermal expansion coefficient in a range of between about 160 and 210.times.10-7/.degree.C. and a dissolution rate in a range of between about 2.times.10.sup.- 7 and 2.times.10.sup.-9 g/cm.sup.2 -min. This composition is suitable to hermetically seal to metallic electrical components which will be subjected to humid environments over an extended period of time.

Abstract: A transimpedance amplifier for use with high temperature superconducting, other superconducting, and conventional semiconductor allows for appropriate signal amplification and impedance matching to processing electronics. The amplifier incorporates the superconducting flux flow transistor into a differential amplifier configuration which allows for operation over a wide temperature range, and is characterized by high gain, relatively low noise, and response times less than 200 picoseconds over at least a 10-80 K. temperature range. The invention is particularly useful when a signal derived from either far-IR focal plane detectors or from Josephson junctions is to be processed by higher signal/higher impedance electronics, such as conventional semiconductor technology.

Abstract: A device for testing the burst pressure of closure disks which provides high pressure to both sides of a disk and rapidly releases pressure from one side thereof causing a high rate of change of pressure. A hollow notched plug allows the rapid release of pressure upon rupturing. A means is also disclosed for transmitting a tensile load from a piston to a hollow notched plug and for sealing the means for transmitting load within a hole in a piston.

Abstract: A vertical-cavity surface-emitting laser is disclosed comprising a laser cavity sandwiched between two distributed Bragg reflectors. The laser cavity comprises a pair of spacer layers surrounding one or more active, optically emitting quantum-well layers having a bandgap in the visible which serve as the active optically emitting material of the device. The thickness of the laser cavity is m .lambda./2n.sub.eff where m is an integer, .lambda. is the free-space wavelength of the laser radiation and n.sub.eff is the effective index of refraction of the cavity. Electrical pumping of the laser is achieved by heavily doping the bottom mirror and substrate to one conductivity-type and heavily doping regions of the upper mirror with the opposite conductivity type to form a diode structure and applying a suitable voltage to the diode structure. Specific embodiments of the invention for generating red, green, and blue radiation are described.

Abstract: A digitally controlled distributed phase shifter is comprised of N phase shifters. Digital control is achieved by using N binary length-weighted electrodes located on the top surface of a waveguide. A control terminal is attached to each electrode thereby allowing the application of a control signal. The control signal is either one or two discrete bias voltages. The application of the discrete bias voltages changes the modal index of a portion of the waveguide that corresponds to a length of the electrode to which the bias voltage is applied, thereby causing the phase to change through the underlying portion of the waveguide. The digitally controlled distributed phase shift network has a total phase shift comprised of the sum of the individual phase shifters.

Abstract: A compact device called the split cavity modulator whose self-generated oscillating electromagnetic field converts a steady particle beam into a modulated particle beam. The particle beam experiences both signs of the oscillating electric field during the transit through the split cavity modulator. The modulated particle beam can then be used to generate microwaves at that frequency and through the use of extractors, high efficiency extraction of microwave power is enabled. The modulated beam and the microwave frequency can be varied by the placement of resistive wires at nodes of oscillation within the cavity. The short beam travel length through the cavity permit higher currents because both space charge and pinching limitations are reduced. The need for an applied magnetic field to control the beam has been eliminated.

Abstract: A chemical sensor (1) includes two or more pairs of interdigital electrodes (10) having different periodicities. Each pair is comprised of a first electrode (10a) and a second electrode (10b). The electrodes are patterned on a surface of a piezoelectric substrate (12). Each pair of electrodes may launch and receive various acoustic waves (AW), including a surface acoustic wave (SAW), and may also launch and receive several acoustic plate modes (APMs). The frequencies associated with each are functions of the transducer periodicity as well as the velocity of the particular AW in the chosen substrate material. An AW interaction region (13) exists between each pair of electrodes. Circuitry (20, 40) is used to launch, receive, and monitor the propagation characteristics of the AWs and may be configured in an intermittent measurement fashion or in a continuous measurement fashion. Perturbations to the AW velocity and attenuation are recorded at several frequencies and provide the sensor response.

Abstract: A method is described for patterning subsurface features in a semiconductor device, wherein the semiconductor device includes an internal strained layer. The method comprises creating a pattern of semiconductor material over the semiconductor device, the semiconductor material having a predetermined thickness which stabilizes areas of the strained semiconductor layer that lie beneath the pattern. Subsequently, a heating step is applied to the semiconductor device to cause a relaxation in areas of the strained layer which do not lie beneath the semiconductor material pattern, whereby dislocations result in the relaxed areas and impair electrical transport therethrough.