Abstract: An improved solar cell structure is described wherein the cell's front region is provided with a plurality of raised structures, each structure comprising a multilayer of a highly doped region and a high-low junction. On these raised structures sit the solar cell's conductive grid. By emplacing the multilayer structure directly underneath the front region metallized conductive grid, the efficiency losses which would have been present had the highly doped region extended entirely or partially across the front layer, are avoided and the high surface recombination velocity associated with the grid is masked.
Abstract: The surface of an electrically conductive substrate is electrolytically modulated to a predetermined profile by subjecting the surface to electrodeposition or electrodissolution through ionically conductive body portions of an ionic conductance resist which masks the surface. The rate of passage of ionic species to or from any given point along the masked surface is controlled by the trans-resist ionic conductance or resistance at that point. The predetermined surface profile is generated by providing the resist with a trans-resist ionic conductance or resistance profile which patterns the predetermined surface profile.
Type:
Grant
Filed:
November 10, 1981
Date of Patent:
November 30, 1982
Assignee:
University Patents, Inc.
Inventors:
John C. Angus, Kathleen M. Tomaswick, Uziel Landau
Abstract: A specular cavity is provided in which an optical receiver is emplaced. The cavity is provided with a series of V groove-like indentations (or pyramidal-type indentations) which redirect energy entering between the receiver and cavity structure onto the receiver. The aperture opening of each V groove is less than half the cavity opening and in most preferred embodiments, much less than half. This enables the optical receiver to be emplaced a distance g from the cavity wherein 0.414r<g.ltoreq.r (r is the radius of the receiver) leading to an attendant increase in energy concentration capability.
Abstract: An alloy capable of reversible sorption of hydrogen having the formula Fe.sub.1-x Mn.sub.x Ti.sub.1-y V.sub.y, where x is within the range from 0 to 0.2 and y is within the range of from 0.005 to 0.08.
Abstract: The reticulocyte content present in a specimen of red blood cells is quantitatively measured based upon the selective immunoreactivity of the reticulocyte portion of the specimen with a reticulocyte-specific antibody which is immunoreactive with proteinaceous material associated with reticulocytes but not associated with mature red blood cells. Such immunoreactive proteinaceous material may be transferrin, transferrin receptor, transcobalamin II, or transcobalamin II receptor. Various procedures are described for quantitating such selective immunoreactivity, including fluorescent and radioactive detection techniques employing direct or indirect fluorescent or radioactive labeling of the reticulocyte-specific antibody.
Abstract: Conjugated polymers are doped with dopant ions to a preselected room temperature electrical conductivity ranging from that characteristic of semiconductor behavior to that characteristic of metallic behavior, by means of an electrochemical procedure wherein the polymer is employed as one or both of the electrodes of an electrolytic cell, including as the electrolyte a compound which is ionizable into the dopant ions. Upon electrolysis of the electrolyte, the polymer, if used as the anode, becomes doped with anionic dopant ions to a p-type material; or if used as the cathode, becomes doped with cationic dopant ions to an n-type material.The above-described electrochemical doping procedure finds particularly useful application in the charging of novel secondary batteries in which a doped conjugated polymer is employed as one or both of the electrodes. Such secondary batteries, in their charged state, comprise a metal whose Pauling electronegativity value is no greater than 1.
Type:
Grant
Filed:
March 11, 1980
Date of Patent:
March 23, 1982
Assignee:
University Patents, Inc.
Inventors:
Alan G. MacDiarmid, Alan J. Heeger, Paul J. Nigrey
Abstract: In accordance with the finding of undesired, non-uniform, heterojunction layers in heterojunction light emitters, it has been determined that completely uniform layers can be grown by growing individual super thin layers (i.e., .ltoreq.200 A) of uniform composition and stacking as many of these layers as desired into a uniform "thick" (.about.0.1.mu.) layer. This growth is accomplished by employing an LPE system wherein the substrate and melt are brought into contact for only the period of time during which the constituents of the melt deposit on the substrate in proper ratios. Steady-state diffusion-limited growth is avoided. The substrate is then removed from the melt, the melt allowed to re-equilibrate, and the process repeated as many times as desired.
Abstract: A process for separating molybdenum values from sea nodules which includes sulfation of the sea nodules, volatilization of the molybdenum values from the sea nodules and collection of the volatile molybdenum values.
Abstract: Electrically conducting organic polymeric material having a preselected room temperature p-type electrical conductivity which may vary over the entire range characteristic of semiconductor behavior and into the range characteristic of metallic behavior, is prepared by controlled chemical doping of polyacetylene in the form of a polycrystalline film. Exceptionally high room temperature p-type electrical conductivity within the range of from about 0.1 to of the order of 10.sup.3 ohm.sup.-1 cm.sup.-1 is achieved with several electron acceptor dopants, including bromine, iodine, iodine chloride, iodine bromide and arsenic pentafluoride.
Type:
Grant
Filed:
May 4, 1978
Date of Patent:
September 16, 1980
Assignee:
University Patents, Inc.
Inventors:
Alan J. Heeger, Alan G. MacDiarmid, Chwan K. Chiang, Hideki Shirakawa
Abstract: Electrically conducting organic polymeric film material exhibiting a preselected room temperature n-type electrical conductivity ranging from that characteristic of semiconductor behavior to that characteristic of metallic behavior, is prepared by controlled electron donor doping of a polycrystalline film of polyacetylene with a metal dopant whose Pauling electronegativity value is no greater than 1.6. Preferred metal dopants are the alkali metals. The procedure may be employed in preparing polyacetylene film with a p-n junction formed by two adjacent portions of the film respectively provided wth p-type and n-type electrical conductivities.
Type:
Grant
Filed:
May 4, 1978
Date of Patent:
May 20, 1980
Assignee:
University Patents, Inc.
Inventors:
Alan J. Heeger, Alan G. MacDiarmid, Chwan K. Chiang, Shek-Chung Gau