Abstract: An improved heat sink is disclosed in which a plurality of heat conducting fins extends form a base of heat conductive material. The top surface of the base is peaked to reduce the dead space that would otherwise occur during vertical impingement air flow. In the preferred embodiment, the top surface is pyramidal in shape with the peak at the center. In other embodiments, the top surface can be convex or concave and have the peak located off center. Also, webs of material can be left at the bottom of the cooling fins to provide channels for improved air flow.

Abstract: A method for providing increased dopant concentration in selected regions of semiconductors by providing field implant dopant in the transition region located below the "bird's beak" region and between the field and active regions of a semiconductor. The method comprises the steps of: forming a thin insulating layer on the surface of a semiconductor substrate; depositing a thin anti-oxidant layer on the insulating layer; depositing a layer of photoresist on the anti-oxidant layer; selectively etching the anti-oxidant layer; ion-implanting the field region of the semiconductor substrate; providing spacers on the sides of the anti-oxidant layer; and oxidizing the semiconductor substrate.

Abstract: A layer of zirconium can be used as an adhesion layer between a ceramic or polyimide substrate and subsequently applied metallic layers. Following the zirconium layer, copper can be deposited followed by a reaction barrier layer and a wettable surface layer such as gold. This type of structure can be used for pin bracing, chip joining, and/or wire connections.

Abstract: A method which provides for a permanent planarization layer on a multilayer integrated circuit. The planarization layer resides above other circuit layers which reflect incident light. A layer of photoresist is formed over the planarization layers and imaged through a mask with circuit defining structure. During exposure of the photoresist, incident light passes through the planarization layer. Scattering from the boundary of the planarization layer and photoresist is minimized because the index of refraction of the planarization layer is substantially equal to the index of refraction of the photoresist. Light reflected from the underlaying layers is substantially absorbed by the planarization layer. Reduction of the reflected and scattered light results in improved resolution of developed images in photoresist.

Abstract: A rotating disk electrode system operates at constant speed in a solution whose metal ion concentration is held constant at multiple concentrations within a range of concentration. The current at the working electrode is recorded, while the potential at the working electrode is swept at a predetermined rate for each of the concentration values. The diffusion limiting current is determined for each of the concentration values. Then the rotating disk electrode system is operated continuously in a metal plating bath whose metal ion concentration can vary. A voltage applied to the working electrode produces a current at the electrode whose magnitude is compared to the values of the previous calibration to determine the current metal ion concentration. Alternatively, a rotating disk electrode system is operated over a range of speeds in a solution whose ion concentration is held constant over a range of concentration.

Abstract: The use of silicon-containing polyimide as an oxygen etch barrier in a metal lift-off process and as an oxygen etch stop in the fabrication of multi-layer metal structures is described. In practice, a lift-off layer is applied on a substrate, followed by a layer of silicon-containing polyimide and a layer of photoresist. The photoresist is lithographically patterned, and the developed image is transferred into the silicon-containing polyimide layer with a reactive ion etch using a CF.sub.4 /O.sub.2 gas mixture. The pattern is transferred to the lift-off layer in a reactive ion etch process using oxygen. Subsequent blanket metal evaporation followed by removal of the lift-off stencil results in the desired metal pattern on the substrate. In an alternate embodiment, the silicon-containing polyimide can be doped with a photoactive compound reducing the need for a separate photoresist imaging layer on the top.

Abstract: An apparatus for removing a mask which extends beyond the outer edges of a semiconductor wafer bonded thereto. The apparatus includes a base having a vacuum chamber opening onto the upper surface of the base, a vacuum valve separating the vacuum chamber from a vacuum source, an actuating lever and a mask discharge facilitator. The discharge facilitator comprising a horizontal plate having a plurality of vertical pins around the periphery thereof. When the lever is actuated, it opens the vacuum valve and lifts the discharge facilitator forcing the vertical pins into contact with the mask. The simultaneous application of the vacuum holding force, and vertical force applied by the pins causes the separation of the mask from the upper surface of the wafer.

Abstract: In a photoresist lift-off process for depositing metal on a semiconductor substrate, a protective coating of silicon is applied to an etched via hole prior to the metal deposition step. This prevents the formation of contaminant trapping voids and contaminated chemical residues which would otherwise occur at the base of the metal line subsequently deposited in the bottom of the via hole. The protective silicon layer, which has a thickness of from 100 to 300 angstroms, remains intact as a permanent part of the structure.

Abstract: A universal calibration standard for surface inspection systems has a plurality of hemispherical pads which simulate the liquid scattering due to particulate contamination. The hemispherical pads scatter light irrespective of angles of illumination and detection and of rotational orientation, and are fabricated using ball-limiting metallurgical techniques. Any number and sizes of pads can be arranged on a substrate and the standard can be repeatedly cleaned, thereby having a long useful life.

Abstract: A testing mechanism is disclosed for incorporation with the gripping fingers of a robot arm, to enable the real time testing of a device under test after it is picked up by the grippers. The robot arm has opposed fingers mounted thereon for transverse clamping of the sides of the device under test, which can be a semiconductor module. Mounted to the robot arm is a test head which can be brought into electrical contact with the pins of the device under test when the device has been picked up by the arm. Test signals supplied through the test head will conduct real time testing of the device while it is being transported by the robot arm from the pick-up point to one of several destination receptacles. The identity of the destination receptacle into which the tested device will be deposited, will depend upon the results of the real time test being carried out while the device is being transported.

Abstract: A method making self-aligned semiconductors utilizing two resist masking steps to form a device; making one of the masks insoluable with respect to the other so that when a first part of the device is formed by a first mask, and a second part of the device is formed by the second masks, the parts are self-aligned when the first resist is dissolved.

Abstract: A process for producing printed circuit boards having metallic conductor structures embedded in the insulating substrate and whose front and back sides are conductively connected by means of plated through holes. The first steps of the process comprise producing a matrix on an epoxy resin substrate consisting of a lift-off layer, an aluminum barrier layer and a positive photoresist layer. A negative image of the desired conductor pattern is then generated in the photoresist layer using conventional photolithographic techniques. The negative image is etched into the barrier layer and the lift-off layer such that an undercut occurs under the barrier layer. Subsequently, vertical trenches are etched into the epoxy resin substrate. After drilling of the through holes, an activating layer of copper is deposited by means of magnetic field enhanced cathode sputtering on the surfaces of the trenches, the through holes and the barrier layer.

Abstract: A monitoring technique is disclosed for determining when the end point has been achieved in the evaporation of the constituents from an alloy such as a tin lead alloy. An optical pyrometer or other temperature sensing device, is focused on a crucible in which both tin and lead is being heated. Since, under vacuum conditions, lead evaporates at a lower boiling point than does tin, the temperature of the crucible will achieve a first temperature plateau while the lead is being evaporated. After the lead has been depleted in the crucible, the temperature of the crucible will rise to a higher temperature plateau at which the tin will evaporate. The output of the optical pyrometer is digitized and is applied to a microcomputer which periodically samples the temperature of the crucible.

Abstract: After cleaning and removal of oxidic layers, the defective copper conductors are completely etched off the surface of the external planes of a multilayer circuit board, and the copper on the walls of the plated through holes is etched at an etching rate continuously decreasing toward the center of the hole walls. Subsequently, an activating layer of copper is applied on the surface of the substrate and on the adjacent parts of the surface of the hole walls. Copper conductors defined by a photoresist mask in a known manner, are deposited on the surface of the activating layer following the additive technique, the copper is deposited on the entire surface of the hole walls. As the maximum etching depth of the copper on the hole wall is approximately 0.2 mm maximum, and as the activating layer is applied up to a depth of approximately 1.2 mm a perfect copper overlap on the walls is ensured.

Abstract: The process sequence is disclosed which applies a polycrystalline silicon gate material, then applies a chemical vapor deposition oxide over all surfaces, forming an effective sidewall on each of the polycrystalline silicon gate structures. An ion implantation step is then carried out to implant source and drain regions whose proximate edges are not aligned with the edges of the polycrystalline silicon gate material itself, due to the masking effect of the sidewall portion of the chemical vapor deposition oxide layer. Thereafter, the chemical vapor deposition oxide sidewall material is selectively removed for those FET device locations where an active FET device is desired to be formed in the operation of personalizing the read only storage or PLA product. Those locations are then ion implanted for source and drain extensions which are then self-aligned with the respective edges of the respective polycrystalline silicon gate electrodes.

Abstract: A compact low-cost drive for a robotic gripper system is disclosed having a rotationally driven shaft connected to an energy source for transmitting energy provided by the energy source to the gripper. An epicyclic gear arrangement is coupled to the shaft to convert the rotational motion of the shaft into a linear motion. At least one of the pins connected to the gears is linearly translateable in two directions under the control of the energy source. Fingers are recessed in the pins to facilitate gripping and releasing objects to be handled by the gripper system. A feedback means coupled between the energy source and the fingers can also be used to sense and control the position of the fingers.

Abstract: A high performance, low cost variable reluctance stepper motor has an integral structure with a ring and a plurality of aligned salient pole members. A plurality of teeth are located on the face of each pole member. Windings are disposed on alternate ones of the pole members and a high impedance means isolates the pole members from one another. A rotor with a plurality of teeth and a plurality of holes disposed thereon coacts with the pole members and is moved in a step fashion by the sequential energization of the windings. The flux generated by the energization of the windings is confined to a short path and coupling to the remainder of the structure is negligible. Recesses positioned symmetrically around the structure also serve to enhance flux splitting and reduce adjacent flux coupling.