Abstract: An ion source (50) for an ion implanter is provided, comprising a remotely located vaporizer (51) and an ionizer (53) connected to the vaporizer by a feed tube (62). The vaporizer comprises a sublimator (52) for receiving a solid source material such as decaborane and sublimating (vaporizing) the decaborane. A heating mechanism is provided for heating the sublimator, and the feed tube connecting the sublimator to the ionizer, to maintain a suitable temperature for the vaporized decaborane. The ionizer (53) comprises a body (96) having an inlet (119) for receiving the vaporized decaborane; an ionization chamber (108) in which the vaporized decaborane may be ionized by an energy-emitting element (110) to create a plasma; and an exit aperture (126) for extracting an ion beam comprised of the plasma. A cooling mechanism (100, 104) is provided for lowering the temperature of walls (128) of the ionization chamber (108) (e.g., to below 350° C.

Abstract: A resonator circuit capable of resonating at a predetermined frequency is provided. The resonator circuit comprises a fixed position coil inductor (62) having a longitudinal axis (92) and a capacitor (88, 82) electrically connected in parallel with each other to form a resonator (60), so that respective first and second ends of the inductor and the capacitor are electrically coupled together at a high-voltage end (64) and a low-voltage end (66) of the resonator (60). A radio frequency (RF) input coupling (70) is coupled directly to the inductor (62) at the low-voltage end (66) of the resonator. A high-voltage electrode (72) is coupled to the high-voltage end (64) of the resonator. A first resonator tuning mechanism is provided for varying the inductance of the inductor, comprising a plunger (90) movable within the coil of the inductor (62) along the longitudinal axis (92). A second resonator tuning mechanism is provided for varying the capacitance of the capacitor (88, 82).

Abstract: A temperature control system (20, 22, 24) is provided for a plasma processing device (10). The plasma processing device (10) comprises a plasma generator (14) and a processing chamber (52) in communication with the plasma generator (14) such that plasma within the generator may pass into the chamber and react with the surface of a substrate (18) residing therein. The temperature control system (20, 22, 24) comprises (i) a radiant heater assembly (20) for heating the substrate (18), comprising a plurality of radiant heating elements (58) arranged in a plurality of zones (a-n), each zone comprising at least one heating element, and a focused reflector (56) for focusing radiant energy from the heating elements toward the substrate; (ii) a feedback mechanism (24) for providing a substrate temperature feedback signal (25); and (iii) a controller (22), including a P-I-D closed loop controller (80) and a lamp power controller (90).

Abstract: A method and system for controllably stripping a portion of silicon (98) from a silicon coated surface, for example, from an interior portion of an ion implanter (10). The system comprises (i) a source (80) of gas comprised at least partially of a reactive gas, such as fluorine; and (ii) a dissociation device (70) such as a radio frequency (RF) plasma source located proximate the silicon coated surface for converting the reactive gas to a plasma of dissociated reactive gas atoms and for directing the dissociated reactive gas atoms toward the silicon coated surface. A control system (102) determines the rate of removal of the silicon (98) from the surface by controlling (i) a rate of source gas flow into and the amount of power supplied to the dissociation device, and (ii) the time of exposure of the silicon coated surface to the plasma.

Abstract: A method and apparatus is provided for controlling the operational parameters of a radio frequency (RF) linear accelerator (linac) (23) in an ion implanter (1). An operator or a higher level computer enters into an input device (10) the desired type of ions, the ionic valence value of ions, the extraction voltage of ion source (21), and the final energy value that is needed. Using internally stored numeric value calculation codes in parameter storage device (18), a control calculation device (11) simulates the ion beam acceleration or deceleration, and the anticipated dispersion of the ion beam, and calculates the RF linac operational parameters of amplitude, frequency and phase for obtaining an optimum transport efficiency. The parameter related to the amplitude is sent from control calculation device (11) to amplitude control device (12) which adjusts the amplitude of the output of RF power supply (15).

Abstract: The present invention provides ion implantation equipment in which the beam current in a lower energy region can be increased without making the equipment very large and the production of the equipment very expensive. A vacuum chamber 1 contains an ion source 2 and an extractor electrode system 3, and in the vacuum chamber, a liner 4, which covers said ion source and extractor electrode system, is provided across an insulator 5. Further, in the vacuum chamber, a beam guide 7, which guides the ion beam out of said extractor electrode system, is provided across an insulator 8. Around said ion beam guide, a mass analyzer magnet 6 is arranged, while a disk chamber 13 is provided across an insulator 9 at one end of the ion beam guide. A deceleration means of electrode apertures 10, 11 and 12, which converge and decelerate the ion beam, is arranged within said disk chamber.

Abstract: A plasma immersion ion implantation method and system is provided for maintaining uniformity in implant energy distribution and for minimizing charge accumulation of an implanted substrate such as a wafer. A voltage modulator (27) applies a pulsed voltage signal (−Vp) to a platen (14) in a process chamber (17) containing a plasma, so that ions in the plasma are attracted by and implanted into a wafer residing on the platen. The voltage modulator (27) comprises: (i) a first switch (50) disposed between a power supply (48) and the platen for momentarily establishing a connection therebetween and supplying the pulsed voltage signal to the platen; (ii) a second switch (54) disposed between the platen (14) and ground for at least momentarily closing to discharge residual voltage (−Vr) from the platen after the first switch (50) opens and the connection between the power supply and the platen is broken; and (iii) a controller (56) for controlling sequential operation of the switches (50, 54).

Abstract: An improved bellows assembly (18) is provided for use in, for example, an ion implanter (10). The bellows assembly comprises a first mounting portion (56) located at one end of the bellows assembly for fixedly mounting the bellows assembly to a first vacuum chamber (16); a second mounting portion (54) located at an opposite end of the bellows assembly for slidably mounting the bellows assembly to a second vacuum chamber (15); and a steel bellows (60) located between the first and second mounting portions. The bellows extends generally along a longitudinal axis (64) and is expansible and contractible along this axis. The second mounting portion permits radial slidable movement of the bellows assembly with respect to the second chamber in a first plane substantially perpendicular to this axis.

Abstract: A dual plasma source (80) is provided for a plasma processing system (10), comprising a first plasma source (82) and a second plasma source (84). The first plasma source (82) has a first plasma passageway (86) for transporting a first plasma therethrough toward a processing chamber (16), the first plasma passageway providing a first inlet (90) for accepting a first gas mixture to be energized by the first plasma source. The second plasma source (84) is connected to the first plasma source (82) and has a second plasma passageway (88) for transporting a second plasma therethrough toward the processing chamber (16), the second plasma passageway providing a second inlet (92) for accepting a second gas mixture to be energized by the second plasma source. The first plasma passageway (86) is constructed from a material that resists atomic oxygen recombination with the first plasma, and the second plasma passageway (88) is constructed from a material that resists etching by the second plasma.

Abstract: A method and system is provided for cleaning a contaminated surface of a vacuum chamber, comprising means for (i) generating an ion beam (44) having a reactive species (e.g., fluorine) component; (ii) directing the ion beam toward a contaminated surface (100); (iii) neutralizing the ion beam (44) by introducing, into the chamber proximate the contaminated surface, a neutralizing gas (70) (e.g., xenon) such that the ion beam (44) collides with molecules of the neutralizing gas, and, as a result of charge exchange reactions between the ion beam and the neutralizing gas molecules, creates a beam of energetic reactive neutral atoms of the reactive species; (iv) cleaning the surface (100) by allowing the beam of energetic reactive neutral atoms of the reactive species to react with contaminants to create reaction products; and (v) removing from the chamber any volatile reaction products that result. Alternatively, the method and system include means for (i) generating an energetic non-reactive (e.g.

Abstract: A compact coil design is provided for a linear accelerator resonator (70) capable of resonating at a predetermined frequency. The coil (90) comprises a plurality of generally circular coil segments (90a-90n), each of the coil segments having a polygonal cross section wherein flat surfaces (122) of adjacent coil segments face each other. The polygonal cross section may take the form of a rectangle having dimensions of length x and width y, wherein dimension x section defines the flat surfaces (122) of adjacent coil segments (90a-90n). The coil segments (90a-90n) are provided with a dual channel construction for providing the introduction of a cooling medium into the coil. The dual channel construction comprises an inlet passageway (118) and an outlet passageway (120) having separate a separate inlet (100) and outlet (102), respectively, at a first end (94) of the coil, and wherein the inlet and outlet passageways (118, 120) are connected and in communication with each other at a second end (96) of the coil.

Abstract: A variable aperture assembly (30) is provided for controlling the amount of ion beam current passing therethrough in an ion implantation system (10). The aperture assembly (30) comprises an aperture (44) defined by opposing first and second aperture plates (44A, 44B) through which an ion beam passes; control arms (46A, 46B) connected, respectively, to the first and second aperture plates (44A, 44B); and an aperture drive mechanism (36) for simultaneously imparting movement to the control arms in opposite directions, to adjust a gap (50) between the aperture plates (44A, 44B) to thereby control the amount of current passing through the aperture (44). Each of the opposite directions in which the control arms move is generally perpendicular to an axis along which the ion beam passes. A control system (120) is also provided for automatically adjusting the aperture gap (50) based on inputs representing actual ion beam current passing through the implanter, desired ion beam current, and aperture position.

Abstract: A filament (18) for an ion implanter ion source or plasma shower is provided comprising first and second legs (20a, 20b) and a thermally emissive central portion (40) having ends connected, respectively, to the first and second legs. Preferably, the legs (20a, 20b) are constructed from tantalum (Ta), and the thermally emissive portion (40) is constructed of tungsten (W). The thermally emissive portion is coiled substantially along the entire length thereof and formed in the shape of a generally closed loop, such as a toroid. The toroid is comprised of two toroid halves (40a, 40b) coiled in opposite directions. The toroid halves are constructed of a plurality of filament strands (42, 44, 46) twisted together along substantially the entire length thereof. The coils of the toroid are capable of establishing closed loop magnetic field lines (B) therein when electrical current flows through the thermally emissive portion.

Abstract: A system and method are provided for operating a variable aperture (30) for adjusting the amount of ion beam current passing therethrough in an ion implantation system (10). The system and method comprise means or steps for (i) measuring ion beam current at an implanter location using a current detector (35); (ii) comparing the measured ion beam current with a desired ion beam current; (iii) outputting a control signal (126, 128) based on the comparison of the measured ion beam current with the desired ion beam current; and (iv) adjusting a gap (50), through which through ion beam passes and which is defined by opposing first and second aperture plates (44A, 44B), in response to the control signal to control the amount of ion beam current passing therethrough. The current detector (35) provides ion beam current feedback, and a position sensor (116, 118) may be utilized to provide aperture plate (44A, 44B) position feedback.

Abstract: A dual walled exhaust assembly (28) is provided for an ion implantation system for connecting system components residing at differing voltage potentials. The assembly comprises a disposable corrugated inner tube (84) connected between inner mounting portions of a first end mount and a second end mount, and a permanent outer tube (82) connected between outer mounting portions of the first and second end mounts. The inner and outer tubes (84, 82) are constructed from polytetrafluoroethylene (PTFE), or some similar dielectric material with appropriate non-flammable properties. The inner corrugated surface of the tube (84) has a plurality of surfaces which are pitched downwardly toward an axis (87) of the inner tube to prevent contaminant accumulation. The corrugated surface also reduces the risk of arcing between the system components residing at differing voltage levels by effectively increasing the length of the ground path that a leakage current would need to traverse across the length of the tube.

Abstract: A method and system for in-process cleaning of an ion source (12) is provided. The ion source (12) comprises (i) a plasma chamber (22) formed by chamber walls (112, 114, 116) that bound an ionization zone (120); (ii) a source of ionizable dopant gas (66) and a first mechanism (68) for introducing said ionizable dopant gas into said plasma chamber; (iii) a source of cleaning gas (182) and a second mechanism (184) for introducing said cleaning gas into said plasma chamber; and (iv) an exciter (130) at least partially disposed within said chamber for imparting energy to said ionizable dopant gas and said cleaning gas to create a plasma within said plasma chamber. The plasma comprises disassociated and ionized constituents of said dopant gas and disassociated and ionized constituents of said cleaning gas.

Abstract: An ion source (50) for an ion implanter is provided, comprising: (i) a sublimator (52) having a cavity (66) for receiving a source material (68) to be sublimated and for sublimating the source material; (ii) an ionization chamber (58) for ionizing the sublimated source material, the ionization chamber located remotely from the sublimator; (iii) a feed tube (62) for connecting the sublimator (52) to the ionization chamber (58); and (iv) a heating medium (70) for heating at least a portion of the sublimator (52) and the feed tube (62). A control mechanism is provided for controlling the temperature of the heating medium (70). The control mechanism comprises a heating element (80) for heating the heating medium (70), a pump (55) for circulating the heating medium, at least one thermocouple (92) for providing temperature feedback from the heating medium (70), and a controller (56) responsive to the temperature feedback to output a first control signal (94) to the heating element.

Abstract: An improved bellows assembly (18) is provided for use in, for example, an ion implanter (10). The bellows assembly comprises a first mounting portion (56) located at one end of the bellows assembly for fixedly mounting the bellows assembly to a first vacuum chamber (16); a second mounting portion (52) located at an opposite end of the bellows assembly for slidably mounting the bellows assembly to a second vacuum chamber (15); and a steel bellows (54) located between the first and second mounting portions. The bellows extends generally along a longitudinal axis (64) and is expansible and contractible along this axis. The second mounting portion permits radial slidable movement of the bellows assembly with respect to the second chamber in a first plane substantially perpendicular to this axis. The second mounting portion comprises at least one sliding seal subassembly (80) for maintaining the vacuum, and a support ring (78) and a slide plate (82) located on opposite ends of the sliding seal subassembly.

Abstract: An attenuator (90) for an ion source (26) is provided. The ion source comprises a plasma chamber (76) in which a gas is ionized by an exciter (78) to create a plasma which is extractable through at least one aperture (64) in an apertured portion (50) of the chamber to form an ion beam. The attenuator (90) comprises a member (90) positioned within the chamber (76) intermediate the exciter (78) and the at least one aperture (64), the member providing at least one first opening (97) corresponding the at least one aperture (64), and being moveable between first and second positions with respect to the at least one aperture. In one embodiment, in the first position, the member is positioned adjacent the aperture (64) to obstruct at least a portion of the aperture, and in the second position the member is positioned away from the aperture (64) so as not to obstruct the aperture.

Abstract: A thermocouple support arm assembly (20) is provided, comprising (i) an arm (28) extending longitudinally along a first axis (X) and having a thermocouple (30) extending therefrom; (ii) an anvil (40) supported by the arm (28) and at least partially occupying a plane defined by a second axis (Y) and a third axis (Z), the anvil positioned below the thermocouple; and (iii) a mounting mechanism (36) for mounting the anvil (40) on the arm (28) such that the anvil (40) is permitted three degrees of rotational freedom with respect to the arm along, respectively, axes X, Y and Z. When a substrate such as a semiconductor wafer is positioned above the thermocouple (30) to at least partially rest upon the thermocouple and the anvil (40), the anvil moves with respect to the arm (28) along the axes (X, Y, Z) to force the thermocouple into contact with the substrate.