Patents Represented by Attorney, Agent or Law Firm John M. Kubodera
  • Patent number: 6816570
    Abstract: A thin film analysis system includes multi-technique analysis capability. Grazing incidence x-ray reflectometry (GXR) can be combined with x-ray fluorescence (XRF) using wavelength-dispersive x-ray spectrometry (WDX) detectors to obtain accurate thickness measurements with GXR and high-resolution composition measurements with XRF using WDX detectors. A single x-ray beam can simultaneously provide the reflected x-rays for GXR and excite the thin film to generate characteristic x-rays for XRF. XRF can be combined with electron microprobe analysis (EMP), enabling XRF for thicker films while allowing the use of the faster EMP for thinner films. The same x-ray detector(s) can be used for both XRF and EMP to minimize component count. EMP can be combined with GXR to obtain rapid composition analysis and accurate thickness measurements, with the two techniques performed simultaneously to maximize throughput.
    Type: Grant
    Filed: March 7, 2002
    Date of Patent: November 9, 2004
    Assignee: KLA-Tencor Corporation
    Inventors: Gary R. Janik, Jeffrey Moore
  • Patent number: 6771735
    Abstract: Thin film thickness measurement accuracy in x-ray reflectometry systems can be enhanced by minimizing scattering and beam spreading effects. An oblong x-ray beam can be produced by shaping the electron beam in an x-ray microfocus tube, or by creating a target with a metal strip having the desired beam cross section. The elongation allows the beam direction dimension to be substantially reduced, without causing overheating of the target. By blocking portions of the x-ray beam focused on the thin film and generating reflectivity curves in increments, the effects of scattering can be minimized.
    Type: Grant
    Filed: November 7, 2001
    Date of Patent: August 3, 2004
    Assignee: KLA-Tencor Technologies Corporation
    Inventors: Gary Janik, Jeffrey Moore
  • Patent number: 6711046
    Abstract: Programmable semiconductor elements, such as zener diodes, are used in an optical array. In one embodiment, an array of zener diodes is formed on a substrate surface and selectively zapped (programmed) to create a reflective filament between anode and cathode contacts of the selected zener diodes. Light is then applied to the surface. The reflected (or transmitted) light pattern may be used for conveying optical information or exposing a photoresist layer. In one use of the array to selectively expose a photoresist layer, the array helps to determine which genes have been expressed in a BioChip. Devices other than zener diodes may also be programmed to create a reflective filament for optically conveying information, such as bipolar transistors, MOSFETS, and non-semiconductor devices. The reflective filament can be a portion of a fuse or anti-fuse.
    Type: Grant
    Filed: June 25, 2001
    Date of Patent: March 23, 2004
    Assignee: Micrel, Incorporated
    Inventor: Martin Alter
  • Patent number: 6687488
    Abstract: A monolithic AM transmitter is disclosed. An external antenna forms part of a resonance network so that the antenna resonance point is automatically tuned to the transmit frequency. This provides flexibility with no added cost to the transmitter.
    Type: Grant
    Filed: December 5, 2000
    Date of Patent: February 3, 2004
    Assignee: Micrel, Incorporated
    Inventors: Joseph S. Elder, Joseph T. Yestrebsky, Mohammed D. Islam
  • Patent number: 6658239
    Abstract: A monolithic AM transmitter is disclosed. An external antenna forms part of a resonance network so that the antenna resonance point is automatically tuned to the transmit frequency. This provides flexibility with no added cost to the transmitter. Additionally, components of the transmitter can be formed on a single monolithic integrated circuit.
    Type: Grant
    Filed: April 17, 2001
    Date of Patent: December 2, 2003
    Assignee: Micrel Incorporated
    Inventors: Joseph S. Elder, Mohammed D. Islam, Joseph T. Yestrebsky
  • Patent number: 6329691
    Abstract: A protective circuit includes a pair of diodes to protect the gate dielectric of an insulated-gate semiconductor device from over-voltage conditions, such as can occur during plasma etch manufacturing processes. The diodes are either anode- or cathode-coupled, and are connected between the gate of the device and bulk ground. Because of their opposing polarities, one of the diodes is always reverse-biased regardless of whether a positive or negative control voltage is applied to the gate of the device. As a result, the protective circuit imposes no operational restrictions on normal control voltages. At the same time, the circuit limits any plasma-induced charge buildup that can arise during manufacturing. If the gate voltage rises, a first of the two diodes is reverse biased and prevents the protective circuit from conducting. When the gate voltage reaches the reverse breakdown voltage of the first diode (plus the small forward voltage drop of the second diode), both diodes begin to conduct.
    Type: Grant
    Filed: December 13, 1999
    Date of Patent: December 11, 2001
    Assignee: Tower Semiconductor Ltd.
    Inventor: David G. A. Finzi