Patents Represented by Attorney John O'Flaherty

Find this attorney in the Justia Lawyer Directory

  • Method of making semiconductor superlattices free of misfit dislocations
    Patent number: 4088515
    Abstract: A method of growing superlattice crystals containing alternating layers of two semiconductor materials in which misfit and threading dislocations are eliminated by growing the layers of superlattice crystal to some thickness less than that which will generate new dislocations, and matching the average lattice parameter of the superlattice with that of substrate so misfit dislocations between the superlattice and the substrate are not formed.
    Type: Grant
    Filed: April 4, 1975
    Date of Patent: May 9, 1978
    Assignee: International Business Machines Corporation
    Inventors: A. Eugene Blakeslee, John W. Matthews