Abstract: A method for electroless nickel plating of silicon-iron which has been heat treated prior to the plating operation and subjected to thermal shock after the plating operation includes the steps of cleaning the surface of the silicon-iron with a fluoride etch salt, forming a thin deposit of palladium on the clean surface of the silicon-iron, hardening the palladium deposit by treatment with a solution of ammonium hydroxide and nickel plating the silicon-iron using an electroless nickel plating solution, followed by baking at about 250.degree. F. for about six hours.

Abstract: A detector structure for contiguous-disk bubble devices has a non-ionimplanted elongated bar, a hairpin conductor and a thin-film magneto-resistive element. The elongated bar is positioned in spaced relation to a large period element at the end of a propagation loop. The elongated bar extends both above and below the large period element and prevents the bubble from passing around the element. The hairpin conductor is positioned over the edge of the bar that faces the end period element. The magneto-resistive element is positioned parallel to and at the center of the hairpin conductor.

Abstract: A passive annihilator for ion-implanted contiguous-disk bubble devices has a deep cusp formed by two narrow, non-implanted regions. This annihilator has a maximum bias field margin and drive field margin, and is compatible with other components which comprise a functional ion-implanted contiguous-disk bubble device.

Abstract: A method for fabricating a high performance bipolar device having a shallow emitter and a narrow intrinsic base region is described. The method uses a minimum number of process steps. The method involves providing a silicon semiconductor body having regions of monocrystalline silicon isolated from one another by isolation regions and a buried subcollector therein. A layer of polycrystalline silicon is deposited on the silicon substrate. The surface of the polycrystalline silicon is oxidized and the polycrystalline silicon is implanted with a base impurity. Silicon nitride and oxide layers are deposited on the polysilicon layer. An opening is made in the surface oxide layers and the silicon nitride layer to define the emitter area. The polycrystalline silicon is thermally oxidized to drive the base impurity into the substrate. The thermal oxide is removed in an isotropic etch to form a sidewall.

Abstract: A passive display module for use in a display system having a source of illumination and a projection lens includes a liquid filled cell having a transparent top and a wall surrounding a display electrode area. A side light guide, coextensive with the display area, forms or abuts one wall of the cell and directs light from the source onto the display area. The guide has a reflective upper inclined surface for reflecting light onto the display area and for preventing light from the source from escaping directly to the projection lens. A reflective coating is also provided on an outer face of the remaining portion of the cell wall which is inclined inwardly to return escaping light to the system.

Abstract: An inexpensive, high quality transmissive holographic optical element and method for making same are described. The holographic optical element consists of a potentially aberrating substrate which supports a layer of holographic recording material. The material contains a recorded fringe pattern that cancels the aberrations induced in an image wavefront as it passes through the aberrating substrate. This optical element is formed by a method having the following steps. A first wavefront from a source, for example a point focus, is passed through the aberrating substrate, becomes distorted, and then passes through the holographic recording material to a wavefront conjugator. The conjugator launches a conjugate of the distorted wavefront back to the holographic recording material. A second wavefront is then passed through the holographic recording material to form a fringe pattern or hologram as a result of the interference of the conjugate waveform and the second waveform.

Abstract: An optical system for the oblique viewing of an object includes a specific embodiment for quantitatively determining the volume of solder mounds on chips and wafers without the introduction of keystone distortion and anamorphosis. The optical system includes means for directing an image of the solder mounds at an angle to a diffraction grating to provide a diffracted beam normal to the grating. The diffracted beam is then processed in a conventional manner to yield the sought-after information. In a preferred embodiment the directing means is an afocal lens system having a magnification of one.

Abstract: The lifetime of a metal diphthalocyanine electrochromic display can be substantially extended by employing a predominantly non-aqueous low hydroxyl ion electrolyte. A preferred electrolyte solvent is ethylene glycol and preferred conductivity salts are tetraethyl ammonium fluoride and sodium chloride. In the case of sodium chloride, conductivity is improved by the addition of up to 25% water to the electrolyte.

Abstract: Electrolytic apparatus employing a reference electrode, e.g. an electrochromic display of the type employing potentiostatic control of write or erase operations, has at least one reference electrode on which a predetermined coating thickness of electrochromic or other electrodepositable material is maintained or replenished by intermittent connection of the electrode to a source of write current. Such a coated reference electrode has a stable potential with respect to the solution which is necessary for potentiostatic control. Two such reference electrodes may be used alternately such that one is being erased and rewritten while the other is connected as a reference.

Abstract: A method for controlling the oxygen concentration profile of a rod of crystalline material such as silicon being pulled from a melt in a crucible includes varying the crucible rotation speed during the pulling process. In a preferred embodiment, the average oxygen concentration profile of a rod pulled at a constant crucible rotation speed is measured and then this information is used in growing another rod by controlling the crucible rotation speed during the pulling process so that its slope is opposite to the slope of the measured average oxygen concentration profile.

Abstract: A passive replicator for bubble devices receives a bubble from an input channel and splits that bubble into two bubbles which go into two separate output channels when a rotating magnetic field is applied. The bubble replicator is a single element which has at least three peripheral areas in spaced relation that are associated with different propagation channels. In preferred embodiments, an elongated bar is present in the propagation channels and it is positioned adjacent to and in spaced relation with a peripheral area of the replicator.

Abstract: A gap tolerant merge element insensitive to crystallographic orientation has a first input track with an end portion substantially facing the end portion of a second input track to form a merge region. The straight edge region in the end portion of the first input track is of a different length than the straight edge region in the end portion of the second input track that it faces.

Abstract: A bubble domain replicator for ion-implanted contiguous disk devices has a cusp portion and a tip portion extending substantially away from the cusp portion so that the cusp forms part of a super track and the tip forms part of a bad track. A hairpin conductor is positioned over the cusp portion and tip portion so that the closed end of the hairpin is closest to and surrounds the end of the tip portion.

Abstract: A flat panel display device comprising a matrix of X and Y drive lines and a plurality of selecting field effect transistors (FETs) is described. Each FET is selectively operable by applying a potential across a unique pair of X and Y drive lines for controlling activation of a corresponding optical transducer. A high value resistance is interposed in series between the gate electrode of each selecting FET and associated drive line to minimize the effect a short circuit caused by a defective gate electrode establishing an electrical connection between X and Y drive lines. The resistance is preferably provided by a segment of undoped polysilicon on a polysilicon circuit line connecting each gate electrode with the associated X drive line.

Abstract: A side feed expander for magnetic bubble devices is disclosed. The side feed expander includes a row of expander elements and an input propagation element associated with one of the sides of an expander element in the row of expander elements. In a preferred embodiment, the input element is associated with the apex portion on one side of one of the expander elements. In another embodiment one propagation element is associated with the side of an expander element on one end of the row of the expander and a second propagation element is associated with the side of an expander element positioned on the other end of the row. A side expander permits the dummy sensor to be positioned in several positions, including the opposite end of the expander from where the active sensor is located.

Abstract: An improved non-data reversing one-way bubble transfer switch for contiguous disks is disclosed. The switch has a conductor arrangement in which one edge of the conductor is substantially concentric with and overlapping with the major loop which is in the form of a plurality of scallops. The major loop extends in a direction substantially transversely to one of the three primary crystallographic axes in the bubble material so as to have a propagation track with a high margin on one side and a low propagation margin on the other side. The tip of a minor loop end portion is aligned substantially concentric with the scalloped concave portion of the major loop. This switch has a maximum bias field margin and a maximum phase margin.

Abstract: A gap tolerant merge element for contiguous-disk bubble devices is disclosed. The merge element includes one input track with a tip portion substantially facing the cusp portion of a second input track to form a merge region. An output track is associated with the merge region. In a preferred embodiment, the merge element is passive and does not have a conductor. In another embodiment, the merge element is active and does have a conductor.

Abstract: A vapor deposition method of coating substrates with a material involves evaporating the end of a wire or rod made of that same material. The end of the wire is inductively or radiantly heated to form a molten convex miniscus thereon which serves as the coating source for the substrates.

Abstract: A method for eliminating deposited residues, for example polysilicon residue, on vertical silicon dioxide sidewalls that have been reactive ion etched includes reshaping the sidewalls to have a slope of at least +30.degree. relative to the vertical direction of the sidewall.

Abstract: A conductorless swap gate for ion-implanted contiguous-disk bubble devices using a folded minor loop and means for reversing the rotation of the rotating magnetic field is disclosed. The bubble device has a major loop, a folded minor loop, a swap gate containing at least one element positioned between the major loop and the folded end of the minor loop. The swap gate has a first portion for interchanging bubbles with the major loop, a second portion for transferring bubbles from a first region of the folded end of the minor loop, and a third portion for receiving bubbles from the second region of the folded end of the minor loop. Activation of the means for reversing the rotation of the rotating magnetic field causes the swap function to be effected. In a preferred embodiment, the device has a swap gate that has two elements and functions as a true swap gate.