Patents Represented by Attorney Joseph Pannone

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  • Overlay metallization multi-channel high frequency field effect transistor
    Patent number: 4107720
    Abstract: A high-frequency, high-power FET constructed upon a planar substrate with a repeated pattern of gate, source, and drain connections wherein any two are interconnected with metallization layers adjacent to and separated from the semiconductor substrate. The third element is interconnected with an overlay metallization layer separated from the lower two metallization layers by an insulating dielectric. The overlay layer is preferably grounded for minimum feedback capacitance.
    Type: Grant
    Filed: April 19, 1976
    Date of Patent: August 15, 1978
    Assignee: Raytheon Company
    Inventors: Robert A. Pucel, James A. Benjamin