Abstract: A method of forming contacts for semiconductor devices, the method including depositing an inter-level dielectric (ILD) over a plurality of gate stacks, in which the divots within the inter-level dielectric layer are defined by the spaces between the gate stacks, filling the divots with an initial fill material, depositing a masking material on the dielectric over the gate stacks, and selectively etching the fill material to form contact vias. The fill material may be a self-assembly material such as a multi-block copolymer in which the blocks self organize vertically within the divots, so that a selective etch of the block material will remove the vertically organized blocks from the divot, but leave at least one block over the gate regions. In another embodiment, the fill material may be a metal, and the masking material may be a parylene based polymer.

Abstract: On-demand services are hosted for customers and offered to users of a computer network. Incoming access requests from users are identified as on-demand service access requests. On-demand service usage data is updated to indicate usage of the on-demand services by the users. Customers are billed for on-demand service usage by the users.

Abstract: A tamper-proof cap adapted to be mounted on a large assembly for shielding a selected area of the large assembly is disclosed. The tamper-proof cap comprises a laminate stack-up structure wherein at least one open chamber is formed. The stack-up structure comprises at least two layers wherein tamper-proof layers are formed on top of the open chamber. A plurality of vias are disposed around the open chamber, forming with said tamper proof layers a tamper-proof structure around said open chamber. The vias are adapted for connecting the tamper-proof layers to the large assembly when the tamper-proof cap is mounted. In a preferred embodiment, the tamper-proof cap further comprises a shielding layer on top of the tamper-proof layer that are preferably done using conductive ink.

Abstract: A solution for prototyping electronic devices is proposed. The solution uses a carrier which allows mounting the desired components with different configurations. In order to achieve this result, for some of these components, such as discrete capacitors, the carrier includes more contacts than the corresponding terminals. In this way, each capacitor may be mounted in multiple positions (such as a working one based on the manufacturing standards, an advanced one with gaps between the components below the corresponding safety margins, and as control one with larger gaps). As a result, it is possible to assemble different prototypes by using a single type of carrier, thereby substantially reducing the cost of the process.

Abstract: Trench capacitors having small and large sizes can be formed simultaneously using a combined lithography process in which openings in a photomask have the same dimensions and spacings. Larger capacitors are formed when the openings in the photomask are aligned with one crystal plane of the semiconductor substrate causing the resulting trenches in the semiconductor substrate to merge. Smaller capacitors are formed when the openings in the photomask are aligned with another crystal plane of the semiconductor substrate in which case each trench remains separate from other trenches.

Abstract: A system and method in which a semiconductor chip has electrically inactive metal-filled vias adjacent to a semiconductor device or devices to be cooled and the semiconductor device or devices are preferably surrounded by thermally insulating vias. The metal-filled vias are contacted with a thermoelectric cooler to remove excess heat from the semiconductor device or devices.

Abstract: A metal gate and high-k dielectric device includes a substrate, an interfacial layer on top of the substrate, a high-k dielectric layer on top of the interfacial layer, a metal film on top of the high-k dielectric layer, a cap layer on top of the metal film and a metal gate layer on top of the cap layer. The thickness of the metal film and the thickness of the cap layer are tuned such that a target concentration of a cap layer material is present at an interface of the metal film and the high-k dielectric layer.

Abstract: A design structure embodied in a machine readable medium to improve performance of an SRAM cell or an SRAM array comprising a plurality of SRAM cells is described. The design structure includes a write circuit for an SRAM cell or an SRAM array. The write circuit includes a gate to switch the write circuit on and off. The cell is supplied by a first, higher voltage. The cell is accessible for read and write operations via at least one bit line connected to a write circuit. The cell is further addressable by at least one word line in order to access it by the bit line. To access the cell for read or write operations, the word line is supplied by the first, higher voltage and the bit line is supplied by a second, lower voltage. During write operations, the write circuit is driven by the first, higher voltage while the bit lines are still at the lower voltage.

Abstract: The present invention provides an enhanced interconnect structure with improved reliability. The inventive interconnect structure has enhanced mechanical strength of via contacts provided by embedded metal liners. The embedded metal liners may be continuous or discontinuous. Discontinuous embedded metal liners are provided by a discontinuous interface at the bottom of the via located within the interlayer dielectric layer.

Abstract: The present invention provides an enhanced interconnect structure with improved reliability. The inventive interconnect structure has enhanced mechanical strength of via contacts provided by embedded metal liners. The embedded metal liners may be continuous or discontinuous. Discontinuous embedded metal liners are provided by a discontinuous interface at the bottom of the via located within the interlayer dielectric layer.

Abstract: A method and structure for a composite stud contact interface with a decreased contact resistance and improved reliability. A selective dry etch is used which comprises a fluorine containing gas. The contact resistance is reduced by partially dry-etching back the tungsten contact after or during the M1 RIE process. The recessed contact is then subsequently metalized during the M1 liner/plating process. The tungsten contact height is reduced after it has been fully formed.

Abstract: A releasably mountable electronics component is provided. The electronics component comprises a backing having a mounting surface and an electronic module joined to the mounting surface of the backing. The electronic module has electrical contacts disposed on a first side thereof. The electronic module also includes an adhesive covering at least a portion of the mounting surface. The adhesive provides a releasable adhesive for releasably mounting the electronics component to a substrate on which the electronic module is connectable.

Abstract: A method to improve performance of an SRAM cell or an SRAM array comprising a plurality of SRAM cells is described. The cell is supplied by a first, higher voltage. The cell is accessible for read and write operations via at least one bit line connected to a write circuit. The cell is further addressable by at least one word line in order to access it by the bit line. To access the cell for read or write operations, the word line is supplied by the first, higher voltage and the bit line is supplied by a second, lower voltage. During write operations, the write circuit is driven by the first, higher voltage while the bit lines are still at the lower voltage. An SRAM cell, an SRAM array plus a write circuit used to perform the method are also described.

Abstract: An interconnect structure with improved performance and capacitance by providing air gaps inside the dielectric layer by use of a multi-phase photoresist material. The interconnect features are embedded in a dielectric layer having a columnar air gap structure in a portion of the dielectric layer surrounding the interconnect features. The interconnect features may also be embedded in a dielectric layer having two or more phases with a different dielectric constant created. The interconnect structure is compatible with current back end of line processing.

Abstract: An SOI CMOS structure includes a v-shape trench in a pFet region. The v-shape trench has a surface in a (111) plane and extends into an SOI layer in the pFet region. A layer, such as a gate oxide or high-k material, is formed in the v-shape trench. Poly-Si is deposited on top of the layer.

Abstract: Personalized notifications are delivered to end users. A service provider receives, a content description from a content provider. The content description defines keywords, values attached to each keyword and a localization of values attached to each keyword in a piece of content. Each time a subscription request for a notification service related to the received content description is received from an end user, keywords values and the delivery channels selected by the user are recorded. A notification rule associated with the end user based on the selected keyword values and the localization of the selected keyword values in the content is generated. Each time a piece of content related to the content description is received from the content provider, the received piece of content is adapted to comply with the generated rules. For each rule previously generated, the values contained in the adapted piece of content are checked against the values as defined in the rule for each localization.

Abstract: A method is provided for fabricating a semiconductor device structure. In such method a p-type field effect transistor (PFET) and an n-type field effect transistor (NFET), each of the NFET and the PFET having a conduction channel disposed in a single-crystal semiconductor region of a substrate. A stressed film having a compressive stress at a first magnitude can be formed to overlie the PFET and the NFET. Desirably, a mask is formed to cover the PFET while exposing the NFET, after which, desirably, a portion of the stressed film overlying the NFET is subjected to ion implantation, while the mask protects another portion of the stressed film overlying the PFET from the ion implantation. The substrate can then be annealed, whereby, desirably, the compressive stress of the implanted portion of the stressed film is much reduced from the first magnitude by the annealing.

Abstract: Information is typically obtained from a relational database using a query in structured query language (SQL). An extension to the SQL standard is described which permits plotting the results of a query. SQL keywords are provided for specifying a format for graphing selected data, and syntax for recognizing those keywords, thereby causing the data to be presented as a graph according to the specified format. This extension of SQL maintains the syntax and style of conventional SQL queries. This permits automated systems, such as database driven websites, to issue extended SQL queries directly to a relational database and have the results returned as formatted graphical content.

Abstract: An interconnect structure with improved performance and capacitance by providing air gaps inside the dielectric layer by use of a multi-phase photoresist material. The interconnect features are embedded in a dielectric layer having a columnar air gap structure in a portion of the dielectric layer surrounding the interconnect features. The interconnect features may also be embedded in a dielectric layer having two or more phases with a different dielectric constant created. The interconnect structure is compatible with current back end of line processing.

Abstract: A semiconductor interconnect structure and method providing an embedded barrier layer to prevent damage to the dielectric material during or after Chemical Mechanical Polishing. The method employs a combination of an embedded film, etchback, using either selective CoWP or a conformal cap such as a SiCNH film, to protect the dielectric material from the CMP process as well as subsequent etch, clean and deposition steps of the next interconnect level.