Abstract: A composite film is provided which has a first layer of WSi.sub.x, where x is greater than 2, over which is disposed a second layer of a tungsten complex consisting substantially of tungsten with a small amount of silicon therein, typically less than 5%. Both layers are deposited in situ in a cold wall chemical vapor deposition chamber at a substrate temperature of between 500.degree. and 550.degree. C.. Before initiating the deposition process for these first and second layers, the substrate onto which they are to be deposited is first plasma etched with NF.sub.3 as the reactant gas, then with H.sub.2 as the reactant gas, both steps being performed at approximately 100 to 200 volts self-bias. WSi.sub.