Abstract: A method of making a low-resistance electrical contact between a p-CdTe layer and outer contact layers by ion beam processing comprising: a) placing a CdS/CdTe device into a chamber and evacuating the chamber; b) orienting the p-CdTe side of the CdS/CdTe layer so that it faces apparatus capable of generating Ar atoms and ions of preferred energy and directionality; c) introducing Ar and igniting the area of apparatus capable of generating Ar atoms and ions of preferred energy and directionality in a manner so that during ion exposure, the source-to-substrate distance is maintained such that it is less than the mean-free path or diffusion length of the Ar atoms and ions at the vacuum pressure; d) allowing exposure of the p-CdTe side of the device to said ion beam for a period less than about 5 minutes; and e) imparting movement to the substrate to control the real uniformity of the ion-beam exposure on the p-CdTe side of the device.

Abstract: A monolithically interconnected photovoltaic module having cells which are electrically connected which comprises a substrate, a plurality of cells formed over the substrate, each cell including a primary absorber layer having a light receiving surface and a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, and a cell isolation diode layer having a p-region, formed with a p-type dopant, and an n-region formed with an n-type dopant adjacent the p-region to form a single pn-junction, the diode layer intervening the substrate and the absorber layer wherein the absorber and diode interfacial regions of a same conductivity type orientation, the diode layer having a reverse-breakdown voltage sufficient to prevent inter-cell shunting, and each cell electrically isolated from adjacent cells with a vertical trench trough the pn-junction of the diode layer, interconnects disposed in the trenches contacting the absorber regions of adja

Abstract: A process for preparing thin Cd2SnO4 films. The process comprises the steps of RF sputter coating a Cd2SnO4 layer onto a first substrate; coating a second substrate with a CdS layer; contacting the Cd2SnO4 layer with the CdS layer in a water- and oxygen-free environment and heating the first and second substrates and the Cd2SnO4 and CdS layers to a temperature sufficient to induce crystallization of the Cd2SnO4 layer into a uniform single-phase spinel-type structure, for a time sufficient to allow full crystallization of the Cd2SnO4 layer at that temperature; cooling the first and second substrates to room temperature; and separating the first and second substrates and layers from each other. The process can be conducted at temperatures less than 600° C., allowing the use of inexpensive soda lime glass substrates.

Abstract: A process for producing a brightness stabilization mixture of water-soluble organic compounds from biomass pyrolysis oils comprising: a) size-reducing biomass material and pyrolyzing the size-reduced biomass material in a fluidized bed reactor; b) separating a char/ash component while maintaining char-pot temperatures to avoid condensation of pyrolysis vapors; c) condensing pyrolysis gases and vapors, and recovering pyrolysis oils by mixing the oils with acetone to obtain an oil-acetone mixture; d) evaporating acetone and recovering pyrolysis oils; e) extracting the pyrolysis oils with water to obtain a water extract; f) slurrying the water extract with carbon while stirring, and filtering the slurry to obtain a colorless filtrate; g) cooling the solution and stabilizing the solution against thermally-induced gelling and solidification by extraction with ethyl acetate to form an aqueous phase lower layer and an organic phase upper layer; h) discarding the upper organic layer and extracting the aqueous

Abstract: The refrigeration system includes a compressor-pump unit and/or a liquid-injection assembly. The refrigeration system is a vapor-compression refrigeration system that includes an expansion device, an evaporator, a compressor, a condenser, and a liquid pump between the condenser and the expansion device. The liquid pump improves efficiency of the refrigeration system by increasing the pressure of, thus subcooling, the liquid refrigerant delivered from the condenser to the expansion device. The liquid pump and the compressor are driven by a single driving device and, in this regard, are coupled to a single shaft of a driving device, such as a belt-drive, an engine, or an electric motor. While the driving device may be separately contained, in a preferred embodiment, the liquid pump, the compressor, and the driving device (i.e.

Abstract: The cabin cooling system includes a cooling duct positioned proximate and above upper edges of one or more windows of a vehicle to exhaust hot air as the air is heated by inner surfaces of the windows and forms thin boundary layers of heated air adjacent the heated windows. The cabin cooling system includes at least one fan to draw the hot air into the cooling duct at a flow rate that captures the hot air in the boundary layer without capturing a significant portion of the cooler cabin interior air and to discharge the hot air at a point outside the vehicle cabin, such as the vehicle trunk. In a preferred embodiment, the cooling duct has a cross-sectional area that gradually increases from a distal point to a proximal point to the fan inlet to develop a substantially uniform pressure drop along the length of the cooling duct.

Abstract: Computer simulation was used in the development of an inward-burning, radial matrix gas burner and heat pipe heat exchanger. The burner and exchanger can be used to heat a Stirling engine on cloudy days when a solar dish, the normal source of heat, cannot be used. Geometrical requirements of the application forced the use of the inward burning approach, which presents difficulty in achieving a good flow distribution and air/fuel mixing. The present invention solved the problem by providing a plenum with just the right properties, which include good flow distribution and good air/fuel mixing with minimum residence time. CFD simulations were also used to help design the primary heat exchanger needed for this application which includes a plurality of pins emanating from the heat pipe. The system uses multiple inlet ports, an extended distance from the fuel inlet to the burner matrix, flow divider vanes, and a ring-shaped, porous grid to obtain a high-temperature uniform-heat radial burner.

Abstract: A photovoltaic device has a buffer layer zinc stannate Zn2SnO4 disposed between the semiconductor junction structure and the transparent conducting oxide (TCO) layer to prevent formation of localized junctions with the TCO through a thin window semiconductor layer, to prevent shunting through etched grain boundaries of semiconductors, and to relieve stresses and improve adhesion between these layers.

Abstract: A method is disclosed of forming a vanadium oxide film on a substrate utilizing plasma enhanced chemical vapor deposition. The method includes positioning a substrate within a plasma reaction chamber and then forming a precursor gas comprised of a vanadium-containing chloride gas in an inert carrier gas. This precursor gas is then mixed with selected amounts of hydrogen and oxygen and directed into the reaction chamber. The amounts of precursor gas, oxygen and hydrogen are selected to optimize the final properties of the vanadium oxide film An rf plasma is generated within the reaction chamber to chemically react the precursor gas with the hydrogen and the oxygen to cause deposition of a vanadium oxide film on the substrate while the chamber deposition pressure is maintained at about one torr or less. Finally, the byproduct gases are removed from the plasma reaction chamber.

Abstract: A novel, simplified method for fabricating a thin-film semiconductor heterojunction photovoltaic device includes initial steps of depositing a layer of cadmium stannate and a layer of zinc stannate on a transparent substrate, both by radio frequency sputtering at ambient temperature, followed by the depositing of dissimilar layers of semiconductors such as cadmium sulfide and cadmium telluride, and heat treatment to convert the cadmium stannate to a substantially single-phase material of a spinel crystal structure. Preferably, the cadmium sulfide layer is also deposited by radio frequency sputtering at ambient temperature, and the cadmium telluride layer is deposited by close space sublimation at an elevated temperature effective to convert the amorphous cadmium stannate to the polycrystalline cadmium stannate with single-phase spinel structure.

Abstract: A colloidal suspension comprising metal chalcogenide nanoparticles and a volatile capping agent. The colloidal suspension is made by reacting a metal salt with a chalcogenide salt in an organic solvent to precipitate a metal chalcogenide, recovering the metal chalcogenide, and admixing the metal chalcogenide with a volatile capping agent. The colloidal suspension is spray deposited onto a substrate to produce a semiconductor precursor film which is substantially free of impurities.

Abstract: A method or producing hydrogenated amorphous silicon on a substrate, comprising the steps of: positioning the substrate in a deposition chamber at a distance of about 0.5 to 3.0 cm from a heatable filament in the deposition chamber; maintaining a pressure in said deposition chamber in the range of about 10 to 100 millitorr and pressure times substrate-filament spacing in the range of about 10 to 100 millitorr-cm, heating the filament to a temperature in the range of about 1,500 to 2,000.degree. C., and heating the substrate to a surface temperature in the range of about 280 to 475.degree. C.

Abstract: A process for the preparation of high purity silane, suitable for forming thin layer silicon structures in various semiconductor devices and high purity poly- and single crystal silicon for a variety of applications, is provided. Synthesis of high-purity silane starts with a temperature assisted reaction of metallurgical silicon with alcohol in the presence of a catalyst. Alcoxysilanes formed in the silicon-alcohol reaction are separated from other products and purified. Simultaneous reduction and oxidation of alcoxysilanes produces gaseous silane and liquid secondary products, including, active part of a catalyst, tetra-alcoxysilanes, and impurity compounds having silicon-hydrogen bonds. Silane is purified by an impurity adsorption technique. Unreacted alcohol is extracted and returned to the reaction with silicon. Concentrated mixture of alcoxysilanes undergoes simultaneous oxidation and reduction in the presence of a catalyst at the temperature -20.degree. C. to +40.degree. C. during 1 to 50 hours.

Abstract: A composition and method for encapsulating a photovoltaic device which minimizes discoloration of the encapsulant. The composition includes an ethylene-vinyl acetate encapsulant, a curing agent, an optional ultraviolet light stabilizer, and/or an optional antioxidant. The curing agent is preferably 1,1-di-(t-butylperoxy)-3,3,5-trimethylcyclohexane; the ultraviolet light stabilizer is bis-(N-octyloxy-tetramethyl) piperidinyl sebacate and the antioxidant is selected from the group consisting of tris (2,4-di-tert-butylphenyl) phosphite, tetrakis methylene (3,5-di-tert-butyl-4-hydroxyhydrocinnamate) methane, octadecyl 3,5-di-tert-butyl-4-hydroxyhydrocinnamate, and 2,2'-ethylidene bis(4,6-di-t-butylphenyl) fluorophosponite. The composition is applied to a solar cell then cured. The cured product contains a minimal concentration of curing-generated chromophores and resists UV-induced degradation.

Abstract: A method of producing soot containing high amounts of fullerenes comprising: providing a primary concentrator capable of impingement of a concentrated beam of sunlight onto a carbon source to cause vaporization of carbon and subsequent formation of fullerenes, or providing a solar furnace having a primary concentrator with a focal point that concentrates a solar beam of sunlight; providing a reflective secondary concentrator having an entrance aperture and an exit aperture at the focal point of the solar furnace; providing a carbon source at the exit aperture of the secondary concentrator; supplying an inert gas over the carbon source to keep the secondary concentrator free from vaporized carbon; and impinging a concentrated beam of sunlight from the secondary concentrator on the carbon source to vaporize the carbon source into a soot containing high amounts of fullerenes.

Abstract: Process and apparatus for providing ultra accelerated natural sunlight exposure testing of samples under controlled weathering without introducing unrealistic failure mechanisms in exposed materials and without breaking reciprocity relationships between flux exposure levels and cumulative dose that includes multiple concurrent levels of temperature and relative humidity at high levels of natural sunlight comprising:a) concentrating solar flux uniformly;b) directing the controlled uniform sunlight onto sample materials in a chamber enclosing multiple concurrent levels of temperature and relative humidity to allow the sample materials to be subjected to accelerated irradiance exposure factors for a sufficient period of time in days to provide a corresponding time of about at least a years worth of representative weathering of the sample materials.

Abstract: Airfoils for the tip and mid-span regions of a wind turbine blade have upper surface and lower surface shapes and contours between a leading edge and a trailing edge that minimize roughness effects of the airfoil and provide maximum lift coefficients that are largely insensitive to roughness effects. The airfoil in one embodiment is shaped and contoured to have a thickness in a range of about fourteen to seventeen percent, a Reynolds number in a range of about 1,500,000 to 2,000,000, and a maximum lift coefficient in a range of about 1.4 to 1.5. In another embodiment, the airfoil is shaped and contoured to have a thickness in a range of about fourteen percent to sixteen percent, a Reynolds number in a range of about 1,500,000 to 3,000,000, and a maximum lift coefficient in a range of about 0.7 to 1.5. Another embodiment of the airfoil is shaped and contoured to have a Reynolds in a range of about 1,500,000 to 4,000,000, and a maximum lift coefficient in a range of about 1.0 to 1.5.

Abstract: A multi-function process is described for the hydrolysis and fractionation of lignocellulosic biomass to separate hemicellulosic sugars from other biomass components such as extractives and proteins; a portion of the solubilized lignin; cellulose; glucose derived from cellulose; and insoluble lignin from said biomass comprising one or more of the following: optionally, as function 1, introducing a dilute acid of pH 1.0-5.0 into a continual shrinking bed reactor containing a lignocellulosic biomass material at a temperature of about 94 to about 160.degree. C. for a period of about 10 to about 120 minutes at a volumetric flow rate of about 1 to about 5 reactor volumes to effect solubilization of extractives, lignin, and protein by keeping the solid to liquid ratio constant throughout the solubilization process; as function 2, introducing a dilute acid of pH 1.0-5.

Abstract: A method for electroless deposition of Cu.sub.x In.sub.y Ga.sub.z Se.sub.n (x=0-2, y=0-2, z=0-2, n=0-3) precursor films and powders onto a metallic substrate comprising:preparing an aqueous bath solution of compounds selected from the group consisting of:I) a copper compound, a selenium compound, an indium compound and gallium compound; II) a copper compound, a selenium compound and an indium compound; III) a selenium compound, and indium compound and a gallium compound; IV) a selenium compound and a indium compound; and V) a copper compound and selenium compound; each compound being present in sufficient quantity to react with each other to produce Cu.sub.x In.sub.y Ga.sub.z Se.sub.n (x=0-2, y=0-2, z=0-2, n=0-3);adjusting the pH of the aqueous bath solution to an acidic value by the addition of a dilute acid; andinitiating an electroless reaction with an oxidizing counterelectrode for a sufficient time to cause a deposit of Cu.sub.x In.sub.y Ga.sub.z Se.sub.

Abstract: The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface.