Abstract: An integrated inductor with filled etch includes a substrate of semiconductor material which includes a surface and a cavity disposed therein, a mass of dielectric material disposed within the cavity, a layer of dielectric material disposed upon the mass of dielectric material, and a patterned layer of conductive material disposed upon the layer of dielectric material, such that the integrated inductor is formed without an oxide bridge. Thus, the integrated inductor has a rugged architecture.
Type:
Grant
Filed:
January 31, 1997
Date of Patent:
December 1, 1998
Assignee:
National Semiconductor Corporation
Inventors:
Richard Billings Merrill, Donald M. Archer