Abstract: A method for forming contact vias in order to make electrical connection between conductive interconnection layers is disclosed. The semiconductor slice is processed so as to form the diffusions and underlying interconnection layers using well known techniques. After the deposition and patterning of the last interconnection layer prior to metallization, a layer of platinum or another metal is deposited onto the slice. The slice is sintered to form a silicide film on those portions of the interconnection layers and diffusions which were directly exposed to the sputtered platinum. A layer of phosphorous-doped dielectric is then deposited, followed by a layer of undoped oxide. Photoresist or another conformal material is spun on to the slice, resulting in a planar top surface. The slice is exposed to a plasma etch which etches both the photoresist and the undoped oxide, resulting in a top surface of the undoped oxide which is substantially planar.