Patents Represented by Law Firm Law Office of H. Donald Nelson
  • Method to optimize p-channel CMOS ICs using Q.sub.bd as a monitor of boron penetration
    Patent number: 5817536
    Abstract: A method to monitor boron penetration and optimize process parameters in the fabrication of a semiconductor device have an n.sup.+ or a p.sup.- -polysilicon gate. The charge-to-breakdown Q.sub.BD value is used to monitor the boron penetration into the polysilicon/gate oxide interface. Values of Q.sub.BD for various values of process parameters are determined and optimized values for these process parameters are derived.
    Type: Grant
    Filed: March 25, 1996
    Date of Patent: October 6, 1998
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Deepak Kumar Nayak, Ming-Yin Hao, Rajat Rakkhit