Abstract: A field-emitting array is provided which comprises at least one thin wafer aving electrically conducting filaments extending through a glass matrix between a first and second parallel surface of the wafer. At the first surface, the filaments extend beyond the plane of the glass matrix. The filaments extending beyond the first surface have an electron-emitting coating on their cylindrical surfaces. The coating extends beyond the filament end to create a shape that emits electrons when an electrical field is applied between the filaments and an anode. In an alternative embodiment, the filaments are recessed below the first surface and a conducting coating forms an extractor on that surface.

Abstract: An image processing system and method are provided which use a selectively ccessed detector array comprised of subarrays. Regions of image activity are located within the detection array through readout of the activity determining elements. Each subarray is evaluated to determine whether any image activity has been detected by the corresponding subarray. Data is only read for the active subarrays. Thus, the activity indicator allows efficient transfer of relevant data from the detector array without requiring previous information. This results in reduced data flow and generally shorter readout cycles. The activity determination can be a non-destructive process so that data contained in the detection array remains available for sensor readout. This eliminates the need to perform one detector exposure cycle to determine activity and a second cycle to read out data from the detector.

Abstract: A gyroklystron device includes an electron beam source, a plurality of bunching cavities and an output cavity. A first bunching cavity has an input coupling aperture for receiving an rf signal from an rf signal injecting source. Each of the bunching cavities has a first pair of substantially uniform-angle slots of a preselected angle, which are diametrically opposed, and extend axially, parallel to the direction of the electron beam and extend into drift regions on both sides of the cavities. The first pair of slots control the Q of a desired mode and higher order modes. A second and third pair of slots are diametrically opposed and extend axially, parallel to the direction of the first pair of slots, but are rotated 90 degrees circumferentially from the first pair of slots. These slots control the axial profile of any mode that leaks out beyond the desired mode and control the length of field interaction with the electron beam.

Abstract: A magnetic memory element is fabricated from a thin magnetic film wherein the magnetic film is grown on a lattice-matched substrate and subsequently patterned to form a closure domain. The closure domain is comprised of a plurality of legs which are joined at domain walls. The individual legs are patterned in the thin magnetic film to lie parallel to an easy axis of the thin film crystal structure being used. Thus, each closure domain represents a magnetic memory element. Fringing fields about the memory elements are eliminated due to the closure domain design. An array of such closure domains can be grown on a substrate and can be packed to high densities up to the limits of current lithographic technology. Such thin film magnetic memory arrays are non-volatile and are compatible with existing RAMs.

Abstract: A transmission grating in which the vertical supports are equidistantly sed from each other in each of the horizontal rows but have their positions relative to each vertical support in all of the other rows determined by a pseudo-random integer of the spacings between the grating wires. As a result, all of the artifacts produced by the vertical supports are eliminated from the diffraction plane.

Abstract: A process for fabricating thin film silicon wafers using a novel etch stop composed of a silicon-germanium alloy includes properly doping a prime silicon wafer for the desired application, growing a strained Si.sub.1-x Fe.sub.x alloy layer onto seed wafer to serve as an etch stop, growing a silicon layer on the strained alloy layer with a desired thickness to form the active device region, oxidizing the prime wafer and a test wafer, bonding the oxide surfaces of the test and prime wafers, machining the backside of the prime wafer and selectively etching the same to remove the silicon, removing the strained alloy layer by a non-selective etch, thereby leaving the device region silicon layer. In an alternate embodiment, the process includes implanting germanium, tin or lead ions to form the strained etch stop layer.