Abstract: A cleaning apparatus is provided which removes contaminants sticking onto a wafer without damaging a device. The cleaning apparatus includes liquid supply means 23 for supplying a liquid not reactive to material constituting a wafer 1, and droplet forming means 10 for interrupting the liquid supplied from liquid supply means 23 to form a droplet 21 out of the liquid. The cleaning apparatus further includes spurting means 22 for spurting the droplet 21 toward the surface of wafer 1.

Abstract: A method and apparatus of managing a multi-channel direct memory access (DMA) operation in which descriptors of data buffers are stored in a circular descriptor queue. The descriptors of those data buffers that are currently available for use in a DMA transfer are maintained in contiguous locations in the descriptor queue. The location of the first available descriptor and the number of currently available descriptors in the descriptor queue are provided to a network controller. Based on this information, the network controller then obtains a set of available descriptors and fills the corresponding buffers with data as it arrives on the different channels. When the use of a data buffer in a DMA transfer is complete, the descriptor for this buffer is made available again in the descriptor queue by re-filling this descriptor immediately following the available descriptors.

Abstract: A method for specifying a fatty acid at the sn2 position of acylglycerol lipids including (a) transfecting a vector including the SLC1 gene or a variant thereof into embryonic biological material, and (b) allowing the SLC1 gene to specify the type of fatty acid at the sn2 position of acylglycerol lipids. Also provided for is an isolated SLC1 gene and a probe for its detection.

Abstract: Memory arrays are divided into banks which can be operated independent from each other. Read data storing registers and write data storing registers operating independent from each other are provided for the banks. The memory array is divided into a plurality of small array blocks, local IO lines are arranged corresponding to each array block, and the local IO lines are connected to global IO lines. The global IO lines are connected to preamplifier groups and to write buffer groups. By control signal generating circuits and by a register control circuit, inhibition of writing of a desired bit only during successive writing operation can be done, data can be collectively written to the selected memory cells when the final data is input if the data writing should be stopped before reaching the wrap length in successive writing, and the timing for activating the memory array when the write cycle should be repeatedly carried out can be delayed.

Abstract: A bi-directional data pipeline for interfacing a memory with a communications port includes a series of four pipeline elements comprising two DMA buffers and first and second holding registers. A data word is transferred from memory to the DMA buffers, each holding one data byte of the data word. With each clock cycle, the data bytes are successively transferred through the two holding registers. Two comparators are used to determine if three successive identical data bytes are present in the pipeline. If three identical bytes are detected, run length encoding is enabled, and a run length count register is incremented for each successive identical byte received through the pipeline. The run length count and associated data byte are transferred to a FIFO for transmission over the data path. A tag associated with the run length count distinguishes the run length count from data bytes in the FIFO.

Abstract: Taxol is produced from taxol-producing micro-organisms. Methods of obtain the taxol-producing microorganisms are described. Radioactive labelled taxol products and methods for use of the radioactive labelled taxol and for the treatment of leukemia and cancer cells are described.

Abstract: A portion of the concentrates is roasted and a portion of the resulting calcine is subjected to a neutral leaching step. Another portion of the concentrates is directly leached in an acidic medium in the presence of oxygen and under atmospheric conditions together with at least a portion of the neutral leaching residue. The zinc- and iron-rich solution resulting from acid leaching is neutralised with another portion of the calcine, the iron is removed and the solution is reused in the neutral leaching step. The method enables a gradual increase in the capacity of an existing zinc plant in accordance with demand, while capital costs may advantageously be spread out over time.

Abstract: A web intended to be used as a topsheet or a backsheet defining front and rear sections and a crotch section extending therebetween in a disposable garment is continuously fed in its longitudinal direction, and a width of the web is divided in two halves along a longitudinally extending cutting line describing a curve approximate to a sine curve in and thus two webs are obtained. These two webs are transversely spaced from each other by a predetermined dimension and one of these two webs is longitudinally shifted relatively to the other by 1/2 period. Thereafter, these two webs are joined together in their overlapping regions. The two webs thus joined together is cut for every period with each pair of such overlapping regions lying in a middle of this period. The invention can thereby provide the topsheet or the backsheet without any waste pieces cut therefrom.

Abstract: A composition for generating a non-toxic, non-flammable, odorless gas is disclosed wherein the propellant of said composition is a mixture of about 30% by weight to about 45% by weight KClO.sub.4 with about 55% by weight to 706 by weight of guanidine nitrate or a gas-generative effective derivative thereof with about 1% by weight to 3% by weight cellulose acetate butyrate, the oxidation ratio of oxidizer to fuel being about 0.92 to about 0.98. The method of using said composition is also disclosed.

Abstract: A program is rerun up to an abnormal point. In this situation, a control flow at a division point between a normal point and the abnormal point is derived while a variable influencing the error and the value of the variable at the division point are derived on the basis of four dependences. A programmer determines an error of the control flow, an error of the value of the variable influencing the error, and an error of a value of a variable used in a conditional instruction/loop instruction. Such processing is repeated, so that an instruction finally remaining between the normal and abnormal points is determined to be a bug. If no instruction having a dependence on the abnormal point is present between the normal and abnormal points, a determination is made that a bug related to omission of an instruction is present between the normal and abnormal points.

Abstract: A security device includes a case with a lid to receive merchandise and a locking mechanism for latching the case closed. The locking mechanism has a housing with parallel flanges to overlie a portion of the lid and another surface of the case, preventing the lid from being opened. One end of the locking mechanism is fixed and the other is movable between open and closed positions, and a mechanism in the housing retains the movable end closed. A decoupler is provided for opening the locking mechanism.

Abstract: A eutectic solution of ammonium nitrate and either aminoguanidine nitrate (AGN) or guanidine nitrate (AN) in the form of a pressed pellet is used to generate a low particulate non-toxic, odorless and colorless gas that is useful wherever an immediate source of such gas is required, such as the inflation of an occupant restraint air bag. The use of the material in the form of a eutectic totally eliminates pellet cracking. Moreover, the addition of a minor amount of potassium perchlorate to the eutectic solution improves stability at 107.degree. for 400 hours, lowers the pressure exponent and increases the burn rate at 2000 psi.

Abstract: In a dynamic semiconductor memory device including a thin film SOI/MOSFET having a semiconductor layer on an insulator as an active region, an "L" level potential of a memory cell transistor, which connects/disconnects a capacitor for storing data as electric charges and a bit line for reading/writing data, is set at a fixed value higher than a ground potential and lower than a power supply potential, and a substrate bias is set at the ground potential. Even if isolation is carried out by LOCOS, sub-threshold leakage current due to a parasitic MOS in the vicinity of LOCOS edge can be suppressed because the potential of a word line is lower than that of the bit line when the memory cell transistor is in a cut-off state. Therefore, a dynamic semiconductor memory device including a thin film SOI/MOSFET which is immune to disturbing refresh can be achieved.

Abstract: A video signal recording apparatus includes a first device for processing a first time segment of a video signal in response to a second time segment of the video signal. The first time segment relates to a first frame or field while the second time segment relates to a second frame or field which precedes the first frame or field. A second device is operative for interrupting the processing by the first device when the video signal starts to be subjected to an editing process. A third device is operative for recording an editing information signal and an output signal of the first device on a recording medium. The editing information signal represents a time of occurrence of the editing process.

Abstract: A semiconductor memory device includes a DRAM, an SRAM and a bi-direction transfer gate circuit provided between SRAM and DRAM. SRAM array includes a plurality of sets of word lines. Each set is provided in each row of SRAM array and each word line in each set is connected to a different group of memory cells of an associated row. An address signal for the SRAM and an address signal for the DRAM are separately applied to an address buffer. The semiconductor memory device further includes an additional function control circuit for realizing a burst mode and a sleep mode. A data transfer path from DRAM to the SRAM and a data transfer path from the SRAM to the DRAM are separately provided in the bi-directional transfer gate circuit. Data writing paths and data reading paths are separately provided in the DRAM array. By the above described structure, operation of the buffer circuit is stopped in the sleep mode, reducing power consumption.

Abstract: An electronic combination lock includes a combination lock having a dial with no markings thereon. Rotation of the dial drives a generator which produces electrical pulses. The voltage pulses serves as a power source for the electronics of the lock. The lock also includes a security feature to disable the lock if the combination dial is stopped between dial rotations for a period of time which indicates dialing by an automatic dialer.

Abstract: A disposable diaper has a pair of hooked fastener components to detachably connect front and rear waist regions of the diaper. The hooked fastener components are bonded to transversely opposite sides, respectively, of the diaper rear waist region and are covered at transversely opposite side edges and/or vertically opposite end edges thereof with soft protective sheets, respectively, to prevent the wearer's skin from being irritated by the hooked fastener components.

Abstract: A semiconductor device to which two kinds of electric voltage can be supplied comprises: a first MOS transistor formed in the first well having a first conduction type and being fixed to a first electric potential, a second MOS transistor formed in a second well having a second conduction type different from the first one and being fixed to a second electric potential higher than the first electric potential, and a third well formed between the first and second wells having the second conduction type and being fixed to a ground electric potential. The first MOS transistor comprises a first gate oxide film having a prescribed thickness and a first gate electrode having a prescribed gate length, while the second MOS transistor comprises a second gate oxide film having a thickness larger than the prescribed thickness of the first gate oxide film and a second gate electrode having a gate length longer than the prescribed thickness of the first gate length.

Abstract: A lead-free soldering material for soldering wires of electronic parts is disclosed. The lead-free soldering material is composed of in weight %: 3-4% of Ag, 2-5% of In, 6-14% of Bi and a balance of Sn, and the soldering material shows a superior solderability.

Abstract: In a dynamic RAM of a CSL system, a memory array is divided into a plurality of memory array portions, and bit line pairs provided in the respective memory array portions are connected to their corresponding I/O line pairs simultaneously in response to a CSL output. In such an RAM, only the I/O line pair of a memory array portion to be accessed is precharged to the level of V.sub.CC -V.sub.th, while the I/O line pair of a memory array portion not to be accessed is precharged to the level of 1/2.multidot.V.sub.CC which is the same level as the bit line pairs. This makes it possible to achieve a faster data reading operation and also prevent unnecessary currents from flowing between the bit line pairs and the I/O line pair in the unaccessed memory array portion.