Abstract: A system and process for utilization and disposition of a supercritical fluid composition, in which a supercritical fluid (SCF) composition is used in an SCF-using process facility such as a semiconductor manufacturing plant. The supercritical fluid composition is withdrawn from the process facility containing at least one component that is extraneous with respect to the further disposition of the supercritical fluid composition. The withdrawn supercritical fluid composition is converted to a pressurized liquid, which is treated to at least partially remove the extraneous component(s) therefrom. The extraneous component(s)-depleted pressurized liquid in its further disposition can be reconverted to a supercritical state for recycle to the SCF-using process facility, or it can be gasified and discharged to the atmosphere in the case of supercritical fluids such as CO2.

Abstract: A low temperature CVD process using a tris (&bgr;-diketonate) bismuth precursor for deposition of bismuth ceramic thin films suitable for integration to fabricate ferroelectric memory devices. Films of amorphous SBT can be formed by CVD and then ferroannealed to produce films with Aurivillius phase composition having superior ferroelectric properties suitable for manufacturing high density FRAMs.

Abstract: A germane storage and dispensing system, in which germane gas is sorptively retained on an activated carbon sorbent medium in a vessel containing adsorbed and free germane gas. The activated carbon sorbent medium is deflagration-resistant in relation to the germane gas adsorbed thereon, i.e., under deflagration conditions of 65° C. and 650 torr, under which free germane gas undergoes deflagration, the activated carbon sorbent medium does not sustain deflagration of the adsorbed germane gas or thermally desorb the germane gas so that it undergoes subsequent deflagration. The deflagration-resistance of the activated carbon sorbent medium is promoted by pre-treatment of the sorbent material to remove extraneous sorbables therefrom and by maintaining the fill level of the sorbent medium in the gas storage and dispensing vessel at a substantial value, e.g., of at least 30%.

Abstract: A non-volatile memory cell wherein the capacitor comprises a Bi-based metal oxide having a crystallographic texture to produce high switchable polarization.

Abstract: A method for removing from a microelectronic device structure a noble metal residue including at least one metal selected from the group consisting of platinum, palladium, iridium and rhodium, by contacting the microelectronic device structure with a cleaning gas including a reactive halide composition, e.g., XeF2, SF6, SiF4, Si2F6 or SiF3 and SiF2 radicals. The method may be carried out in a batch-cleaning mode, in which fresh charges of cleaning gas are successively introduced to a chamber containing the residue-bearing microelectronic device structure. Each charge is purged from the chamber after reaction with the residue, and the charging/purging is continued until the residue has been at least partially removed to a desired extent. Alternatively, the cleaning gas may be continuously flowed through the chamber containing the microelectronic device structure, until the noble metal residue has been sufficiently removed.

Abstract: The present invention relates to a method for determining concentration of brightener and leveler contained in an aqueous acid metal electroplating solution, by firstly determining the concentration of the brightener at a first set of measurement conditions, and secondly determining the concentration of the leveler at a second set of measurement conditions, provided that the first set of measurement conditions differ from the second set of measurement conditions on the rotation speed of a rotating disc electrode used for measuring plating potential of said aqueous acid metal electroplating solution, and optionally, the electroplating duration at which the plating potential of said aqueous acid metal electroplating solution is measured, provided that the first rotation speed is lower than the second rotation speed, and that the first electroplating duration is shorter than the second electroplating duration.

Abstract: A modified PbZrTiO3 perovskite crystal material thin film, wherein the PbZrTiO3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

Abstract: A thermoregulation system for an ion implantation system to reduce the temperature in the ion implanter and components therein, or attached thereto, to a temperature at which an ion source material, used in the ion implanter, has a vapor pressure that yields a reduced concentration of vapors. Such arrangement markedly reduces the risk of exposure to harmful vapors from the ion source material.

Abstract: A capacity increase and/or pressure decrease of gas in a gas storage and dispensing vessel is achieved by use of a physical adsorbent having sorptive affinity for the gas. Such approach enables conventional high pressure gas cylinders to be redeployed with contained sorbent, to achieve substantial enhancement of safety and capacity.

Abstract: A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0.1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0.5-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

Abstract: A solvent composition useful for liquid delivery MOCVD, comprising toluene and a Lewis base, wherein toluene is present at a concentration of from about 75% to about 98% by volume, based on the total volume of toluene and the Lewis base. Such solvent composition is usefully employed to dissolve or suspend precursors therein for liquid delivery MOCVD, e.g., MOCVD of ferroelectric material films such as SBT.

Abstract: A method is provided for promoting adhesion of CVD copper to diffusion barrier material in integrated circuit manufacturing. The method uses a two-step CVD copper metallization process. Following deposition of a diffusion barrier layer on the IC substrate, a first layer of CVD copper is deposited on the barrier material. The first layer is preferably thin (less than 300 Å) and deposited using a precursor which yields an adherent conforming layer of copper. The suggested precursor for use in depositing the first layer of CVD copper is (hfac)Cu(1,5-Dimethylcyclooctadiene). The first layer of CVD copper serves as a “seed” layer to which a subsequently-deposited “fill” or “bulk” layer of CVD copper will readily adhere. The second copper deposition step of the two-step process is the deposit of a second layer of copper by means of CVD using another precursor, different from (hfac)Cu(1,5-Dimethylcyclooctadiene).

Abstract: A digital circuit run in conjunction with a system clock signal. The digital circuit includes: a digital logic circuitry regulated by a clock signal and powered by a system current; and a clocking circuitry, communicatively coupled to the digital logic circuitry and the system clock signal, for supplying the clock signal to the digital logic circuitry. The clocking circuitry includes: a power supply monitor circuitry, communicatively coupled to the power supply, providing a first signal indicative of a predetermined level of system current; and a clock regulation circuitry, communicatively coupled to the power supply circuitry, which outputs the clock signal to the digital logic circuitry in response to the first signal. The clock signal comprises (1) the system clock signal when the first signal is in a first state, and (2) a modified clock signal when the first signal is in a second state.

Abstract: A bulk chemical delivery system, comprising: a bulk chemical canister that is connected to at least one manifold box, wherein each manifold box has at least two output lines, wherein each output line connects to a secondary canister. In non-limiting representative example, the bulk chemical canister may have a capacity of 200 liters. Also disclosed are novel manifolds for use in delivering chemicals from canisters and a transportation/containment cart.

Abstract: Copper pyrazolate precursor compositions useful for the formation of copper in semiconductor integrated circuits, e.g., interconnect metallization in semiconductor device structures, as an adhesive seed layer for plating, for the deposition of a thin-film recording head and for circuitization of packaging components. The copper pyrazolate precursor compositions include fluorinated and non-fluorinated pyrazolate copper (I) complexes and their Lewis base adducts. Such precursors are usefully employed for liquid delivery chemical vapor deposition of copper or copper-containing material on a substrate.

Abstract: A highly reliable digital level sensor assembly is provided to replace optical and capacitance type sensors in high purity chemical delivery systems. The digital level sensor assembly is particularly useful in bulk chemical refill delivery systems for high purity chemicals employing a manifold that ensures contamination free operation and canister change outs with a minimum of valves and tubing.

Abstract: Chemical vapor deposition (CVD) precursor compositions for forming Zr/Hf doped gate dielectric, ferroelectric, or high dielectric constant (k) metal oxide thin films. The precursor composition in one embodiment comprises a metal precursor having a general formula M(&bgr;-diketonate)2(OR)2, wherein M is Zr or Hf, and R is t-butyl. The precursor composition may also comprise a solvent medium selected from the group consisting of ethers, glymes, tetraglymes, amines, polyamines, alcohols, glycols, aliphatic hydrocarbon solvents, aromatic hydrocarbon solvents, cyclic ethers, and compatible combinations of two or more of the foregoing.

Abstract: The invention relates to a fluid storage and delivery system utilizing a porous metal matrix that comprises at least one Group VIII metal or Group IB metal therein. In one aspect of the invention, such porous metal matrix forms a solid-phase metal adsorbent medium, characterized by an average pore diameter of from about 0.5 nm to about 2.0 nm and a porosity of from about 10% to about 30%. Such solid-phase metal adsorbent medium is particularly useful for sorptively storing and desoprotively dispensing a low vapor pressure fluid, e.g., ClF3, HF, GeF4, Br2, etc. In another aspect of the invention, such porous metal matrix forms a solid-phase metal sorbent, characterized by an average pore diameter of from about 0.25 &mgr;m to about 500 &mgr;m and a porosity of from about 15% to about 95%, which can effectively immobilize low vapor pressure liquefied gas.

Abstract: An improved, non-plasma, static method for removing accumulated films and solid residues from interior surfaces of processing chambers used in thermal or plasma CVD treatment processes. The method includes introducing a reactive substance into a processing chamber while adjusting the pressure within the processing chamber to a predetermined level. The flow of the reactive substance into the processing chamber is terminated and the reactive substance is retained in the processing chamber to react with solid residues and form reaction products, following which the reaction products are subsequently removed from the processing chamber. Advantageously, terminating the flow of reactive substance into the processing chamber results in etching action that more effectively utilizes the cleaning agent and generates less hazardous materials.

Abstract: A thermopile-based detector for monitoring and/or controlling semiconductor processes, and a method of monitoring and/or controlling semiconductor processes using thermopile-based sensing of conditions in and/or affecting such processes.