Abstract: An output driver for an integrated circuit performs a precharge function before internal data is available, minimizing the access time for such data. Also, the pull up and pull down circuitry used in the precharge function is separate from the output driver, and independent of the level of the data signal to be driven. A sense circuit senses an initial state of the output pad, before the output signal is supplied to the output pad, which indicates whether a voltage level on the output pad is above a threshold or below the threshold. A precharge circuit includes a pull up circuit and a pull down circuit. The pull up circuit is responsive to the initial state indicating that the voltage level on the output is below the threshold, and the pull down circuit is responsive to the initial state indicating that the voltage level on the output is above the threshold. A detector is coupled to the output, and produces a control signal indicating when output is near the threshold.

Abstract: The present invention provides a method and apparatus for providing fault-tolerance for in-circuit programming systems. The invention operates by storing a minimal set of code to initialize the in-circuit programming process in a protected memory so that if the in-circuit programming process fails, the in-circuit programming process can be restarted from the protected memory. This type of fault-tolerance is especially important in systems which allow the code which accomplishes the in-circuit programming to be modified by the in-circuit programming process. One embodiment of the present invention provides a multiplexer to selectively switch between a normal boot code sequence and a protected boot code sequence, as well as a watchdog timer to monitor the in-circuit programming process to determine whether the in-circuit programming process is not progressing properly.

Abstract: An integrated circuit memory comprises an array of non-volatile memory cells arranged in rows and columns, and including a plurality of banks. There are a plurality of word lines along the plurality of rows in the array, and a plurality of array bit lines arranged along the plurality of columns. The array bit lines extend across the array, and include sense lines and ground lines. A plurality of bank bit lines is arranged along the plurality of columns. The bank bit lines extend across corresponding banks in the plurality of banks and are coupled to memory cells in the corresponding banks. A plurality of connection terminals are coupled to the array bit lines. For each array bit line there is at least one connection terminal per bank in the plurality of banks for which the array bit line will be used. A plurality of bank select transistors is provided to act as bank select circuitry.

Abstract: The present invention provides an electronic file and file structure solution for comprehensive management of documents captured as scanned objects, raster objects or representation. Using the present invention a representation of a document is created using any type of imaging device. The representation includes objects present in the document. The location in the document of the objects in the plurality of objects is identified. One copy of each different object in the plurality of objects is stored in the file. The location of objects in the plurality of objects are stored in the file in a spatial layout index. The file thus contains all of the information required to faithfully reproduce the original document. In order to reconstruct the document, the objects are placed at the locations identified by the spatial layout index.

Abstract: Mask ROMS with fixed code implantation and associated integrated circuits are described. An integrated circuit has a Mask ROM including: an array of memory cells including a first bank of memory cells and a second bank of memory cells, and the first bank of memory cells separated from the second bank of memory cell by a set of select lines, and the first bank of memory cells and the second bank of memory cells includes at least one fixed code implanted memory cell column. The use of fixed code implantation results in a single current path during the reading of a given memory cell and permits the size of the corresponding device to be reduced and have better topography.

Abstract: A semiconductor device is formed on a substrate having an ESD region and an internal region. A protective layer is formed over a portion of the ESD region to be protected from formation of silicide and suicide is formed on portions of the Internal and ESD region which remain unprotected by the protective layer. A portion of the protective layer is removed to form the remaining portions of the protective layer into sidewall spacers adjacent to a gate electrode included in the ESD region.

Abstract: A method and apparatus for creating a phase shifting mask and a structure mask for shrinking integrated circuit designs. One embodiment of the invention includes using a two mask process. The first mask is a phase shift mask and the second mask is a single phase structure mask. The phase shift mask primarily defines regions requiring phase shifting. The single phase structure mask primarily defines regions not requiring phase shifting. The single phase structure mask also prevents the erasure of the phase shifting regions and prevents the creation of undesirable artifact regions that would otherwise be created by the phase shift mask. Both masks are derived from a set of masks used in a larger minimum dimension process technology.

Abstract: An on chip voltage generation circuit is provided suitable for use on integrated circuits such as flash memory devices with a low power supply voltage (e.g., 2.7 to 3.6 volts). A voltage boost circuit is coupled to the supply voltage input and to a boost signal, which boosts the on-chip voltage at a node on the integrated circuit in response to a transition of the boost signal. The voltage boost circuit has a first mode which in response to the transition boosts the on-chip voltage at a first rate of boosting until a first threshold, and a second mode which in response to the transition boosts the on-chip voltage at a second rate of boosting until a second threshold. The second rate of boosting in the preferred system is slower than the first rate of boosting. A detection circuit is coupled to the node on the integrated circuit which receives the on-chip voltage, and to the voltage boost circuit.

Abstract: An assembly that engages a component to a computer system includes a cover adapted to retain the component and to be inserted within a chassis of the computer system. A slide movably coupled to the cover has a proximal position associated with inserting the cover into the chassis and a distal position associated with withdrawing the cover from the chassis. A detector coupled to a lock and to the slide detects movement of the slide to actuate the lock. The lock is coupled to the slide and to the detector, and blocks movement of the slide towards the distal point when the lock is in an engaged state.

Abstract: The invention provides a floating gate memory cell, where the floating gate comprises a first lateral end region and a second lateral end region. A middle region is positioned towards a middle of the floating gate with respect to the first lateral end region and the second lateral end region. The thickness of the floating gate decreases continuously from at least one of the first or second lateral end regions to the middle region. This invention also provides for a method of forming a contoured floating gate for use in a floating gate memory cell.

Abstract: An ESD protection circuit with buried diffusion and internal overlap coupling capacitance is used to lower trigger voltage and create a compact protection circuit area. This protection circuit can be applied to memory and logic products and can be employed in power bus, input, and output pins to protect against ESD. The manufacturing process of this high-performance protection circuit is compatible with non-volatile memory process without an additional mask layer step.

Abstract: A circuit is provided for applying a negative voltage to the control gate of a floating gate memory cell and a positive voltage to the source drain or channel which comprises a positive voltage source to provide a positive voltage to the source of the cell, and a negative voltage source responsive to the supply voltage to provide a negative voltage to the control gate. A voltage regulator is included that is coupled to the negative voltage source and to the positive voltage source to maintain the negative voltage at a level responsive to the source voltage. The regulator maintains the negative voltage in response to the source voltage so that the electric field remains essentially constant over a range of values of source voltage.

Abstract: A method and apparatus for creating a phase shifting mask and a structure mask for shrinking integrated circuit designs. One embodiment of the invention includes using a two mask process. The first mask is a phase shift mask and the second mask is a single phase structure mask. The phase shift mask primarily defines regions requiring phase shifting. The single phase structure mask primarily defines regions not requiring phase shifting. The single phase structure mask also prevents the erasure of the phase shifting regions and prevents the creation of undesirable artifact regions that would otherwise be created by the phase shift mask. Both masks are derived from a set of masks used in a larger minimum dimension process technology.

Abstract: A sensing circuit for sensing the logic state of a memory cell which minimizes read times is described which includes a first circuit branch corresponding to an array circuit path and a second circuit branch corresponding to a reference cell circuit path. In operation during the pre-decode interval, additional load and current generation circuitry are enabled in the first circuit path so that the voltage as seen by the sensing input of a sensing circuit comparator is driven to be essentially equivalent to that of the reference signal as established by the reference cell circuit path on the reference input of the sensing circuit comparator. Once the address has been decoded, the additional load circuitry is disabled so as to allow the sensing input of the comparator to transition to a voltage representative of the logic state stored in the memory cell.

Abstract: Controlling network services using palm sized computers is described. A program on the palm sized computer is used to access a registry of network services that may be available. The registry includes descriptions for various services. Each description includes at least a reference to program code that can be downloaded to the palm sized computer. Executing this program causes the palm sized computer to issue commands directly to the specific network services needed. In some cases, these network services include application services for running desktop applications that the palm sized computer could not execute.

Abstract: A multi-level memory cell device and method for self-converged programming which includes a memory cell switchably coupled to a non-programmable reference cell (or dummy cell), the cells arranged in respective arrays. A current source voltage between the source node and ground of the cells is relational to the threshold voltage, so as the threshold voltage is increased, the current source voltage decreases. The threshold voltage of the dummy cell is set by a stable voltage source. The memory cell is programmed and the current source voltage of the memory cell is compared to the current source voltage of the reference cell and therefore the difference in the voltages can be used to sense convergence of the programmed cell with a target threshold level set on the reference cell. A controller is also included between the reference cell and memory cell for adjusting the threshold voltage of the dummy cell according to the gate coupling ratio of the floating gate memory cell.

Abstract: A memory cell having an asymmetric source and drain connection to virtual ground bit-lines providing an abrupt junction suitable for band-to-band hot electron generation and a gradual junction suitable for Fowler-Nordheim tunneling on each side of the cells. A nonvolatile semiconductor memory device comprising row and column arrangement of the cells in which adjacent columns of cells share a single virtual ground bit line.

Abstract: The Infant/toddler indoor—outdoor play/mat corral with locking handle 16 and clasp mechanism 18 has a top quilt base 10 and foam block walls 40 which follow the perimeter of the base. Fabric 14 is sewn together creating two “U” shape receiving channels which overlay foam block walls 40 and are sewn to top quilt base 10 and bottom water resistant base 28 from interior to exterior. A locking handle 16 and clasp mechanism 18 including a handle piece sewn into one exterior wall that is fitted into a clasp sewn into the opposite exterior wall forming a handle for securing and carrying purposes. When the corral is folded along its diameter 30 creating a single “U” shape, the foam block walls 40 collapse and meet by connecting VELCRO strips 32 sewn along the bottom water resistant base 28 thus keeping the wall portions secure with the locking handle 16 and clasp mechanism 18. A pocket 22 is sewn to exterior wall portion to store items when folded and unfolded.

Abstract: Harmonic techniques are employed to leverage low-cost, ordinary surface mount technology (SMT) to high microwave frequencies where tight beamforming with a small antenna makes reliable, high-accuracy pulse-echo radar systems possible. The implementation comprises a 24 GHz short-pulse transceiver comprised of a pulsed harmonic oscillator employed as a transmitter and an integrating, pulsed harmonic sampler employed as a receiver. The transmit oscillator generates a very short (0.5 ns) phase-coherent harmonic-rich oscillation at a sub-multiple of the actual transmitter frequency. A receiver local oscillator operates at a sub-multiple of the transmit frequency and is triggered with controlled timing to provide a very short (0.5 ns), phase-coherent local oscillator burst. The local oscillator burst is coupled to an integrating harmonic sampler to produce an integrated, equivalent-time replica of the received RF.

Abstract: The present invention discloses a regulator system (112) for regulating the output current and voltage (Vout) of a charge pump circuit (104). It is observed that the output current and voltage (Vout) of a charge pump circuit (104) can be regulated by varying the amplitude and frequency of a set of clock signals (modulated clocks). The present invention comprises means (decoders 1, 2; AM, FM units) for generating a set of control signals (VAD1-VFDn) as the function of the output current and voltage (Vout). The set of control signals (VAD1-VFDn) is coupled to a clock signal generation circuit (130) that generates a set of clock signals (modulated clocks) having a magnitude and a frequency depending on this set of at least one control signal. This set of clock signals (modulated clocks) is then used to drive the charge pump circuit (104). It is found that this regulator circuit (112) consumes less power than prior art regulator circuits.