Abstract: A spin valve sensor with an antiparallel coupled lead/sensor overlap region is provided comprising a ferromagnetic bias layer antiparallel coupled to a free layer in first and second passive regions where first and second lead layers overlap the spin valve sensor layers. The ferromagnetic material of the bias layer in a track width region defined by a space between the first and second lead layers is converted to a nonmagnetic oxide layer allowing the free layer in the track width region to rotate in response to signal fields from a magnetic disk.

Abstract: A manufacturing method for a spin valve sensor with a thin antiferromagnetic (AFM) layer exchange coupled to a self-pinned antiparallel coupled bias layer in the lead overlap regions is provided. The spin valve sensor comprises forming a ferromagnetic bias layer antiparallel coupled to a free layer in first and second passive regions where first and second lead layers overlap the spin valve sensor layers and forming a thin AFM layer exchange coupled to the bias layer to provide a pinning field to the bias layer. A cap layer is deposited over the thin AFM layer.

Abstract: A semiconductor slider including an integral spin valve transistor (SVT) having a read width of 250 nm or less disposed on a monolithic semiconductor. substrate, useful in magnetic data storage applications. The monolithic slider may also include other magnetic and semiconductor transistor structures and is fabricated in a single process using standard thin-film processing steps. The SVT includes a sensor stack having a top surface and including a first ferromagnetic (FM) layer in contact with and forming a Schottky barrier at the monolithic semiconductor substrate, a FM shield layer disposed over the sensor stack and in electrical contact with the top surface thereof, a SVT emitter terminal coupled to the FM shield, a SVT collector terminal coupled to the substrate and a SVT base terminal coupled to the first FM layer. The sensor stack may include a spin valve (SV) stack or a tunnel valve (TV) stack, for example.

Abstract: A method is provided for testing a magnetoresistive sensor for polarity reversal. In one embodiment, the method includes: writing a test pattern on a magnetic disk; providing a mechanical or thermal stress to the magnetoresistive sensor for a period of time; and, comparing the polarity of the test pattern before and after the application of stress.

Abstract: A spin valve sensor with a thin antiferromagnetic (AFM) layer exchange coupled to a self-pinned antiparallel coupled bias layer in the lead overlap regions is provided. The spin valve sensor comprises a ferromagnetic bias layer antiparallel coupled to a free layer in first and second passive regions where first and second lead layers overlap the spin valve sensor layers and a thin AFM layer exchange coupled to the bias layer to provide a pinning field to the bias layer.