Abstract: An apparatus for fabricating thin film materials utilizing high speed gas dynamics relies on supersonic free jets of carrier gas to transport depositing vapor species generated in a microwave discharge to the surface of a prepared substrate where the vapor deposits to form a thin film. The present invention generates high rates of deposition and thin films of unforeseen high quality at low temperatures.
Type:
Grant
Filed:
January 7, 1992
Date of Patent:
October 26, 1993
Assignee:
Jet Process Corporation
Inventors:
Jerome J. Schmitt, III, Bret L. Halpern