Abstract: An improved ferroelectric structure and the method for making the same is disclosed. The improved structure reduces the fatigue problems encountered in ferroelectric capacitors while providing avoiding problems in depositing the ferroelectric material which have prevented other solutions to the fatigue problem from being effective. The improved ferroelectric structure also provides improved adhesion to the underlying substrate. The ferroelectric structure has a bottom electrode comprising a layer of PtO.sub.2 which is generated by depositing a layer of Platinum on a suitable substrate and then exposing the Platinum layer to an Oxygen plasma. The ferroelectric material is then deposited on the PtO.sub.2 layer.