Patents Represented by Law Firm McGinn & Gibb, P.C. Daryl K. Neff, Esq.
  • Technique for extending the limits of photolithography
    Patent number: 6140217
    Abstract: A method of forming a wiring pattern in a device comprises forming an array of grooves in a mask, forming first spacers adjacent vertical walls of the grooves, removing the mask, forming second spacers adjacent the first spacers, and filling areas between the first spacers and areas between the second spacers with a material to form the wiring pattern.
    Type: Grant
    Filed: July 16, 1998
    Date of Patent: October 31, 2000
    Assignee: International Business Machines Corporation
    Inventors: Harris C. Jones, James G. Ryan
  • Self-aligned deep trench DRAM array device
    Patent number: 6140175
    Abstract: An integrated circuit and a method of manufacturing an integrated circuit comprises forming an insulator over a substrate, forming a trench in the insulator and the substrate, undercutting the insulator to form a gate conductor opening between the substrate and the insulator adjacent the trench, and forming a gate oxide and gate conductor in the gate conductor opening.
    Type: Grant
    Filed: March 3, 1999
    Date of Patent: October 31, 2000
    Assignee: International Business Machines Corporation
    Inventors: Richard L. Kleinhenz, Carl J. Radens