Abstract: A method for mini module EMI shielding effectiveness evaluation comprises providing a test vehicle including at least one test platform. The test platform includes at least one mini emitter, a mini receiver with a reference shield, and a mini receiver with a shield under test. EMI shielding effectiveness transmission signals are applied to the at least one mini emitter. Signals received by the mini receiver with a shield under test and the mini receiver with the reference shield are evaluated. The mini emitter, mini receiver with the reference shield, and mini receiver with the shield under test comprise components fabricated concurrently and under fabrication conditions used for fabrication of the test platform of the test vehicle. As used herein, a mini emitter and mini receiver may be interchanged according to the requirements of a given EMI shielding effectiveness evaluation.

Abstract: A liquid level sensor device (10) includes a liquid level sensor element (14), a capacitance-to-voltage converter (16), and a controller (18). The liquid level sensor element (14) comprises (i) at least two sets of N conductive electrodes (22) and (ii) M sense lines (S1-S7), where M is greater than or equal to N within each set of the at least two sets of conductive electrodes. Each of the M sense lines couples to select ones of the N conductive electrodes of the at least two sets of conductive electrodes to form a number of L sets of parallel coupled conductive electrodes, where L equals M. The capacitance-to-voltage converter (16) periodically measures a capacitance of the L sets of parallel coupled conductive electrodes for each of the M sense lines. The controller (18) establishes initial measured baseline capacitance values for each of the L sets of parallel coupled conductive electrodes and an initial liquid level height value.

Abstract: A method of forming a semiconductor structure includes forming a channel layer; forming a superlattice barrier layer overlying the channel layer, and forming a gate dielectric overlying the superlattice barrier layer. The superlattice barrier layer includes alternating first and second layers of barrier material. In addition, the superlattice barrier layer is configured for increasing a transconductance of the semiconductor device by at least a factor of three over a semiconductor device absent such superlattice barrier layer.

Abstract: A NICAM encoding method comprises performing NICAM processing and coupling a front-end to the NICAM processing. The front-end processing operates with a system clock that is integer divisible such that the system clock can be used by both the NICAM processing and the front-end processing. The front-end processing includes a front-end input processing and a front-end output processing. The front-end input processing is coupled to an input of the NICAM processing and the front-end output processing is coupled to an output of the NICAM processing.

Abstract: A variable interpolator (110) has an interpolation factor L for performing an interpolation of an input signal (124), where L is variable and includes a minimum value. The variable interpolator includes a differentiator (110-1), a chopper (112), and an integrator (110-2). The differentiator (110-1) is responsive to a signal on the differentiator input for performing a differentiator portion of the interpolation and for providing a differentiator result signal (134).

Abstract: A semiconductor device includes a single crystal substrate and a dielectric layer overlying the substrate. The dielectric layer includes at least one opening having a first portion and an overlying second portion. The first portion has a depth and width, such that an aspect ratio of the depth to width is greater than one. The semiconductor device further includes a first material having a first portion and a second portion, the first portion of the first material filling the first portion of the at least one opening. Defects for relaxing strain at an interface between the first material and the substrate material exist only within the first portion of the first material due to the aspect ratio being greater than one. The second portion of the first material is substantially defect free. Furthermore, the second portion of the first material and an overlying second material different than the first material fill the overlying second portion of the at least one opening.

Abstract: Nanocrystals (22) are formed in a semiconductor, such as for example, in a memory having a floating gate. A dielectric (18) overlies a substrate (12) and is placed in a chemical vapor deposition chamber (34). A first precursor gas, such as disilane (36), is flowed into the chemical vapor deposition chamber during a first phase to nucleate the nanocrystals (22) on the dielectric with first predetermined processing conditions existing within the chemical vapor deposition chamber for a first time period. A second precursor gas, such as silane, is flowed into the chemical vapor deposition chamber during a second phase subsequent to the first phase to grow the nanocrystals under second predetermined processing conditions existing within the chemical vapor deposition chamber for a second time period.

Abstract: A method and apparatus for coupling a user-created window, or object, to menu functions of another application is accomplished once functions of another program have been selected and an attachment menu bar is created. The attachment menu bar is then graphically attached to the user-created object. When one of the selected menu functions is invoked, the system performs the function indicated by the selected function on an object within the user-created object or on the user-created object.

Abstract: The invention relates to a device for measuring the momentum transfer spectrum of X-ray quanta elastically scattered in an examination zone, comprising an X-ray source and a detector device with a plurality of detector elements, one of which serves to measure a reference radiation beam. Attractive results are obtained in that between the examination zone and the X-ray source there is arranged at least one scatter member which scatters the X-rays emitted by the X-ray source, the reference radiation beam being formed from the part of the scattered radiation which reaches the reference detector element rectilinearly through the examination zone.

Abstract: A digital-line telephone unit having two sets combined in one housing with partially shared circuitry. The unit connects directly to an integrated services digital network (ISDN) and includes both a handset with connection cord and a cordless set. A single digital line terminating unit, a main circuit for the corded telephone, and an auxiliary circuit for the cordless phone are connected to an internal digital bus. The main circuit and auxiliary circuit each contain a respective speech processor. Transmission from the corded handset and the cordless handset can occur simultaneously over different message channels of the ISDN.

Abstract: Input ECL level signals are received and converted into output CMOS level signals by input buffer (30). The input buffer (30) biased between first and second supply voltage (Vcc, Vee) and is comprised of three stages. The first stage (11A) consists of a conventional emitter-follower transistor (Q1) and a current-switch (13) connected in series. The input signal VIN at the ECL level is applied to the base of the emitter-follower transistor (Q1). The output signals (VA, VB) obtained therefrom drive a second stage which consists of an input buffer circuit (20), which supplies two pairs of output signals (V1) V2; V1', V2') for each phase. Each pair of output signals drives an output driver (31; 31') forming the third stage. The input buffer circuit (20) is composed of two NPN bipolar transistor (T1; T2) connected in an emitter-follower configuration forming two branches. In each branch, the emitter load consists of three FET devices: two PFETs (P1, P3; P2, P4 ) and one NFET (N1; N2) serially connected.

Abstract: A recycleable element includes a means for visually indicating the number of times the element has been recycled whereby the indicating means is updateable each time the element is recycled, up to a maximum recycleable life of the element. Such a recycleable element is particularly useful in a recycleable film pack single-use camera having a built-in electronic flash unit.